• Korean Journal of Applied Biomechanics
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• v.22 no.1
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• pp.75-82
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• 2012

The purpose of this study was to suggest the proper shaft and head fitting methods of the golf club to increase the flight distance of the golf ball. Rotations per minute of the golf ball(RPM), ratio of Ball speed to club head speed(T-Ratio) and launch angle right after impact(LA), which are directly related to ball flight distance, were measured using Spectra with shutter speed of 1/1000sec at the constant head speed of 95mph which was controlled by robot golf swing machine. In order to investigate the effect of club shaft to the 3 selected variables, 10 shafts were used to make ten test clubs with one controlled club head which is the most commonly used by golf players. To measure the effect of the club head to the 3 selected variables, 6 golf club heads which are most commonly used by golfers were selected to make 6 test clubs with a controlled shaft which is one of the best known by players. The shafts and the heads were identified by statistical analysis to increase or decrease the RPM, T-ratio and LA. A proper fitting method of the selected shafts and the club head was suggested to increase the ball flight distance in golf.

• Journal of the Korean Magnetic Resonance Society
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• v.10 no.2
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• pp.141-154
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• 2006

A solid-state reaction of $V_2O_5$ with AlMCM-41 followed by calcinations generated $V^{5+}$ species in the mesoporous materials. Dehydration results in the formation of a vanadyl species, $VO^{2+}$, that can be characterized by electron spin resonance (ESR). The chemical environment of the vanadium centers in V-AlMCM-41 was investigated by XRD, EDX, diffuse reflectance UV-VIS, ESR, $^{29}Si,\;^{27}Al,\;and\;^{51}V$ NMR. It was found that the vanadium species on the wall surface and inside the wall of the hexagonal tubular wall of the V-AlMCM-41 were completely oxidized to tetrahedral $V^{5+}$ and transformed to square pyramidal by additional coordination to water molecules upon hydration. The oxidized $V^{5+}$ species on the wall surfaces and inside the wall were also reversibly reduced to $VO^{2+}$ species or lower valences by thermal process.

• 한국벤처창업학회:학술대회논문집
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• 2007.11a
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• pp.111-140
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• 2007

This paper was analyzed to improve internal corporate venture system in public companies. The problems of internal corporate venture systems in a public company were as follows: First, lack of the CEO's willingness in venture business was shown. The culture of venture business also was not mature; Second, the employees were behind the effort to develop their business ability; Third, the objective views are needed to screening venture items and evaluation; Fourth, to measure performance of internal corporate venture, a clear basis and measure system were needed. Fifth, the reward was restricted; Finally, the mother-company did not invest any money for the spin-outed ventures The results of the paper were as follows: First, the CEO's support and effusion of venture culture were needed for successful internal corporate venture system; Second, a public company has to provide education program for venture and information--sharing system; Third, outside consultant may be utilized in finding venture items and feasibility evaluation. Fourth, each venture team may be provided a clear object and specific evaluation system based on characteristic of each team; Fifth, performance-base reward system is needed to enhance motivation; Finally, the public company has to provide find for the spin-off venture by utilizing government system and forming venture capital funds.

• Korean Journal of Applied Biomechanics
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• v.19 no.1
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• pp.67-75
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• 2009

The purpose of this study is to analyze the effects of target position on the bowling motion. Four female high school athletes with more than four years of bowling experiences were recruited to this study. The major results of this study are as follows; When a subject treats the 1st pin, The spin angle of a coxa for the target position is largely kept from the downswing to the backswing peak point. When a subject treats the 7th pin, As the 7th pin exists at the left side for the right shoulder axis of the thrower, the movement of the ball center of the thrower from side to side is the lowest. In addition, the time required and horizontal speed appear the highest in the release section. The slant angle of a shoulder is largely increased as she moves from the backswing peak point to the release section. The twist angle of a shoulder also appears small as a throw motion is made toward the left side. When a subject treats the 10th pin, The spin angle of a shoulder and the twist angle of a body in motion appear the largest in the release section. So, there are the effects of target position on the bowling motion.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.348-348
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• 2014

차세대 디스플레이 구동 회로 소자를 위한 재료로서, Amorphous Oxide Semiconductor (AOS)가 주목받고 있다. AOS는 기존의 Amorphous Silicon과 비교하여 뛰어난 이동도를 가지고 있으며, 넓은 밴드 갭에 의한 투명한 광학적 특성을 가지고 있다. 이러한 장점을 이용하여, AOS 박막은 thin film transistor (TFT)의 active channel로 이용 되고 있다. 하지만, AOS를 이용한 TFT의 경우, 시간이 경과함에 따라 $O_2$ 및 $H_2O$ 흡착에 의해 전기적 특성이 변하는 현상이 있다. 이러한 현상은 소자의 신뢰성에 있어 중요한 문제가 된다. 이러한 문제를 연구하기 위해 본 논문에서는, AOS 박막을 이용하여 bottom 게이트형 TFT를 제작하였다. 이를 위해 먼저, p-type Si 위에 건식산화방식으로 $SiO_2$(100 nm)를 성장시켜 게이트 산화막으로 이용하였다. 그리고 Zn과 Sn이 1: 2의 조성비를 가진 ZnSnO (ZTO) 용액을 제조한 후, 게이트 산화막 위에 spin coating 하였다. Splin coating된 용액에 남아 있는 솔벤트를 제거하기 위해 10분 동안 $230^{\circ}C$로 열처리를 한 후, 포토리소그래피와 에칭 공정을 이용하여 ZTO active channel을 형성하였다. 그 후, 박막 내에 남아 있는 불순물을 제거하고 ZTO TFT의 전기적인 특성을 향상시키기 위하여, $600^{\circ}C$의 열처리를 30분 동안 진행 하여 junctionless형 TFT 제작을 완료 하였다. 제작된 소자의 시간 경과에 따른 열화를 확인하기 위하여, 대기 중에서 2시간마다 HP-4156B 장비를 이용하여 전기적인 특성을 확인 하였으며, 이러한 열화는 후처리 공정을 통하여 회복시킬 수 있었다. 열화의 회복을 위한 후처리 공정으로, 퍼니스를 이용한 고온에서의 열처리와 microwave를 이용하여 저온 처리를 이용하였다. 결과적으로, TFT는 소자가 제작된 이후, 시간에 경과함에 따라서 on/off ratio가 감소하여 열화되는 경향을 보여 주었다. 이러한 현상은, TFT 소자의 ZTO back-channel에 대기 중에 있는 $O_2$ 및 $H_2O$의 분자의 물리적인 흡착으로 인한 것으로 보인다. 그리고 추가적인 후처리 공정들에 통해서, 다시 on/off ratio가 회복 되는 현상을 확인 하였다. 이러한 추가적인 후처리 공정은, 열화된 소자에 퍼니스에 의한 고온에서의 장시간 열처리, microwave를 이용한 저온에서 장시간 열처리, 그리고 microwave를 이용한 저온에서의 단 시간 처리를 수행 하였으며, 모든 소자에서 성공적으로 열화 되었던 전기적 특성이 회복됨을 확인 할 수 있었다. 이러한 결과는, 저온임에도 불구하고, microwave를 이용함으로 인하여, 물리적으로 흡착된 $O_2$ 및 $H_2O$가 짧은 시간 안에 ZTO TFT의 back-channel로부터 탈착이 가능함과 동시에 소자의 특성을 회복 가능 함 의미한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.262-262
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• 2016

최근 고해상도 디스플레이가 주목받으면서 기존 비정질 실리콘(a-Si)을 대체할 수 있는 재료에 관한 연구가 활발히 진행되고 있다. a-Si의 경우 간단한 공정 과정, 적은 생산비용, 대면적화가 가능하다는 장점이 있지만 전자 이동도가 매우 낮은 단점이 있다. 반면, 산화물 반도체는 비정질 상태에서 전자 이동도가 높으며 큰 밴드갭을 가지고 있어 투명한 특성을 나타낼 뿐만 아니라, 저온공정이 가능하여 기판의 제한이 없는 장점을 가지고 있다. 대표적으로 가장 널리 연구되고 있는 산화물 반도체는 a-IGZO(amorphous indium-gallium-zinc oxide)이다. 그러나 InZnO(IZO) 기반의 산화물 반도체에서 carrier suppressor 역할을 하는 Ga(gallium)은 수요에 대한 공급이 원활하지 못하여 비싸다는 단점이 있다. 그러므로 경제적이면서 a-IGZO와 유사한 전기적 특성을 나타낼 수 있는 suppressor 물질이 필요하다. 따라서 본 연구에서는 IZO 기반의 산화물 반도체에서 Ga을 Hf(hafnium), Zr(zirconium), Si(silicon)으로 대체하여 용액증착(solution-deposition) 공정으로 각각의 채널층을 형성한 back-gate type의 박막 트랜지스터(thin-film transistor, TFT) 소자를 제작하였다. 용액증착 공정은 물질의 비율을 자유롭게 조절할 수 있고, 대기압의 조건에서도 공정이 가능하기 때문에 짧은 공정시간과 저비용의 장점이 있다. 제작된 소자는 p-type Si 위에 게이트 절연막으로 100 nm의 열산화막이 성장된 기판을 사용하였다. 표준 RCA 클리닝 후에 각 solution 물질을 spin coating 방식으로 증착하였다. 이후, photolithography, develop, wet etching의 과정을 거쳐 채널층 패턴을 형성하였다. 또한, 산화물 반도체의 전기적 특성을 향상시키기 위해서 후속 열처리 과정(post deposition annealing, PDA)은 필수적이다. CTA 방식은 높은 열처리 온도와 긴 열처리 시간의 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 낮은 온도와 짧은 열처리 시간의 장점을 가지는 MWI (microwave irradiation)를 후속 열처리로 진행하였다. 그 결과, 각 물질로 구현된 소자들은 기존 a-IGZO와 비교하여 적은 양의 carrier suppressor로도 우수한 전기적 특성 및 안정성을 얻을 수 있었다. 따라서, Si, Hf, Zr 기반의 산화물 반도체는 기존의 Ga을 대체하여 저비용으로 디스플레이를 구현할 수 있는 IZO 기반 재료로 기대된다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.3
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• pp.181-186
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• 2017

Single point incremental forming (SPIF) is a sheet-forming technique. It is a die-less sheet metal manufacturing process for rapid prototyping and small batch production. The Critical parameters in the forming process include tool diameter, step depth, feed rate, spindle speed, etc. In this study, these parameters and the die shape corresponding to the Varying Wall Angle Conical Frustum(VWACF) model were used for forming 0.8mm in thick Al5052-O sheets. The Taguchi method of Experiments of Design (DOE) and Grey relational optimization were used to determine the optimum parameters in SPIF. A response study was performed on formability, spring back, and thickness reduction. The research shows that the optimum combination of these parameters that yield best performance of SPIF is as follows: tool diameter, 6mm; spin speed, 60rpm; step depth, 0.3mm; and feed rate, 500mm/min.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.2
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• pp.45.1-45.1
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• 2021

Horizon Run 5 (HR5) is a cosmological hydrodynamical simulation which captures the properties of the Universe on aGpc scale while achieving a resolution of 1kpc. This enormous dynamic range allows us to simultaneously capture the physics of the cosmic web on very large scales and account for the formation and evolution of dwarf galaxies on much smaller scales. On the back of a remarkable achievement of this, we have finished to run follow-up simulations which have 2 times larger volume than before and are expected to complementary to some limitations of previous HR simulations both for the study on the large scale features and the expansion history in a distant Universe. For these simulations, we consider the sub-grid physics of radiative heating/cooling, reionization, star formation, SN/AGN feedbacks, chemical evolution and the growth of super-massive blackholes. In order to do this project, we implemented a hybrid MPI-OpenMP version of the RAMSES code, 'RAMSES-OMP', which is specifically designed for modern many-core many thread parallel systems. These simulation successfully reproduce various observation result and provide a large amount of statistical samples of Lyman-alpha emitters and protoclusters which are important to understand the formation and expansion history of early universe. These are invaluable assets for the interpretation of current ΛCDM cosmology and current/upcoming deep surveys of the Universe, such as the world largest narrow band imaging survey, ODIN (One-hundred-square-degree Dark energy camera Imaging in Narrow band).