• 제목/요약/키워드: BaZrO$_3$

검색결과 205건 처리시간 0.032초

적외선 투과성 플루오르화 중금속 유리의 $3,400cm^{-1}$ -OH 흡수에 미치는 가공조건의 영향 (Effect of processing Conditions on $3,400cm^{-1}$ -OH Peak in IR Transmitting Heavy Metal Fluoride Glasses)

  • 장기호
    • 한국세라믹학회지
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    • 제21권3호
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    • pp.231-238
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    • 1984
  • Heavy metal fluoride glasses exhibit considerable promise as high transparency materials from the UV to the IR. These glasses are prepared by fusion of the mixture of metal fulorides($ZrF_4$, $BaF_2$, $LaF_3$ etc) at 800-1, 00$0^{\circ}C$ under the inert$(N_2)$ or reactive ($CCl_4$, $Cl_2$) atmosphere following the casting into glass on cooling. Infrared absorption at the 3, 400 cm-1 -OH peak has been measured as a function of thickness for several ZrF-$BaF_2$-LaF and $HfF_4$-$BaF_2$-$LaF_3$ glasses to separate contributions from bulk and surface -OH. For glasses melted under $CCl_4$ reactive atmosphere the peak is due almost entirely to surface-OH. and melting in a closed reactor was best for removing -OH. In ambient atmosphere the -OH peak exhibited no time dependence over a 30 d period indicating a very small rate of surface attack by atmospheric H2O. Removal of -OH absorption processing was generally easier and more complete for the $BaF_2$/ThF4-glasses than for the $ZrF_4$-or $HfF_4$-based glasses.

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Modified glycine-nitrate process(MGNP)로 합성한 BaCo1-x-yFexZryO3-δ 산소투과도 및 수소생산성 (Oxygen Permeation and Hydrogen Production of BaCo1-x-yFexZryO3-δ by a Modified Glycine-nitrate Process (MGNP))

  • 이은정;황해진
    • 한국수소및신에너지학회논문집
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    • 제24권1호
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    • pp.29-35
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    • 2013
  • A dense mixed ionic and electronic conducting ceramic membrane is one of the most promising materials because it can be used for separation of oxygen from the mixture gas. The $ABO_3$ perovskite structure shows high chemical stability at high temperatures under reduction and oxidation atmospheres. $BaCo_{1-x-y}Fe_xZr_yO_{3-{\delta}}$ (BCFZ) was well-known material as high mechanical strength, low thermal conductivity and stability in the high valence state. Glycine Nitrate Process (GNP) is rapid and effective method for powder synthesis using glycine as a fuel and show higher product crystallinity compared to solid state reaction and citrate-EDTA method. BCFZ was fabricated by modified glycine nitrate process. In order to control the burn-up reaction, $NH_4NO_3$ was used as extra nitrate. According to X-Ray Diffraction (XRD) results, BCFZ was single phase regardless of Zr dopants from y=0.1 to 0.3 on B sites. The green compacts were sintered at $1200^{\circ}C$ for 2 hours. Oxygen permeability, methane partial oxidation rate and hydrogen production ability of the membranes were characterized by using Micro Gas Chromatography (Micro GC) under various condition. The high oxygen permeation flux of BCFZ 1-451 was about $1ml{\cdot}cm^{-2}s^{-1}$. Using the humidified Argon gas, BCFZ 1-433 produced hydrogen about $1ml{\cdot}cm^{-2}s^{-1}$.

$Ar/O_2$ 비에 따른 PZT/BST 이종층 박막의 구조적 특성 (The Structural Properties of the PZT/BST Heterolayered Thin Films with $Ar/O_2$ Ratio)

  • 이의복;남성필;이상철;김지헌;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.607-610
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    • 2004
  • The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

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In-situ electron beam growth of $YBa_2Cu_3O_{7-x}$ coated conductors on metal substrates

  • Jo, W.;Ohnishi, T.;Huh, J.;Hammond, R.H.;Beasley, M.R.
    • Progress in Superconductivity
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    • 제8권2호
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    • pp.175-180
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    • 2007
  • High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

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LTCC 내장 캐패시터용 BaTiO3계 세라믹스의 저온소결 및 유전특성 (Low-Temperature Sintering and Dielectric Properties of BaTiO3-Based Ceramics for Embedded Capacitor of LTCC Module)

  • 박정현;최영진;고원준;박재환;남산;박재관
    • 한국세라믹학회지
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    • 제42권2호
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    • pp.81-87
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    • 2005
  • [ $BaTiO_3$ ]계 유전체 모재료에 대하여 $Al_{2}O_{3}$와 CaO 조성이 소량 포함된 lithium-borosilicate계 유리 프릿을 $5\~15wt\%$ 적용함으로써 LTCC용 내장 캐패시터로 적용 가능한 조성을 개발하였다. 이를 위하여 먼저, 화학적으로 안정하고 저온소성효과가 탁월한 유리 프릿 조성물을 설계하고 이를 유전체 모재료에 적용하여 저온소성특성 및 유전특성을 평가하였다. $BaTiO_3$ 세라믹스를 모재료로 하는 경우 유리 프릿을 5wt$\%$ 첨가하였을 때 $925^{\circ}C$에서 $95\%$ 정도의 상대밀도 값을 나타내었으며, 이 경우 유전율 990, 유전손실 $3.1\%$의 유전특성을 나타내었다. $(Ba,Ca)(Ti,Zr)O_3$ 세라믹스를 모재료로 하여 유리프릿을 10 wt$\%$ 첨가한 경우는 $875^{\circ}C$의 소결온도에서 상대밀도가 $95\%$ 이상이며 기공율 $0.5\%$ 이하인 소결특성을 나타내었고, 700 이상의 유전율 및 $2\%$ 내외의 유전손실 값을 가지는 것으로 측정되었다.

PZT 세라믹스에서 Pb 대신 치환된 이온이 유전 및 압전특성과 압전열화에 미치는 영향 (Effects on Dielectric, Piezoelectric, and Aging Properties of Ions Substituted for Pb in PZT Ceramics)

  • 문학범;정윤해
    • 한국결정학회지
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    • 제7권2호
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    • pp.165-174
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    • 1996
  • 본 연구는 Pb(Zr0.52Ti0.48)O3을 기본 조성으로하여 Pb-site에 Pb2+보다 이온 반경이 큰 Ba2+, 비슷한 크기의 Sr2+ 그리고 이온 반경이 작은 Ca2+를 치환하여 유전 및 압전 특성을 조사하고, 압전 열화에 대한 영향을 고찰하고자 하였다. 치환하지 않은 기본 조성에 비해 치환된 조성의 비유전율과 전기기계결합게수는 Ba2+ 치환시 가장 높았고, Sr2+ 치환시 기본조성과 비슷하였으며 Ca2+ 치환시 감소하였다. 기계적 품질계수는 지본 조성에 비해 Ba2+ 치환시에는 감소하였으며, Sr2+, Ca2+ 치환으로 갈수록 증가하는 경향을 나타내었다. 그리고 압전 열화시 주파수 변화 특성에서는 각 이온 치환에 따른 변화는 보이지 않았으나 상온 방치시와 고온 방치(100℃)후의 열화속도가 상온방치후보다 빨랐다.

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세라믹스 종결정 위에 Floating Zone Technique 법으로 성장한 Ba(Ti0.92Zr0.08)O3 다결정의 Tunability (Tunability of Ba(Ti0.92Zr0.08)O3 Polycrystal Grown on Ceramic Seed by Floating Bone Technique)

  • 황호병
    • 한국세라믹학회지
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    • 제41권10호
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    • pp.771-776
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    • 2004
  • Zr을 $8\%$ 첨가한 BZT 세라믹스를 종결정과 소재봉으로 사용하여 floating zone technique법으로 $Ba(Zr_{0.08}Ti_{0.92})O_3$ 다결정을 성장하였다. 열처리 효과를 알아보기 위하여 성장한 결정의 일부를 떼어내어 $1,200^{\circ}C$에서 10시간동안 산소 분위기에서 열처리하였다. $-100^{\circ}C$에서 $+150^{\circ}C$ 온도 영역에서 유전상수 및 유전손실을 10kHz, 100kHz, 그리고 1 MHz에서 측정하여 성장 결정의 유전특성을 알아보았다. 상온($27^{\circ}C$)과 저온($-73^{\circ}C$)에서 직류전장(-15kV/cm$\le$E$\le$15kV/cm)을 인가하면서 유전상수의 변화를 10kHz와 100kHz에서 측정함으로써 유전상수의 전장의존성을 알아보았다. 산소 열처리는 상온에서 10kHz의 튜너빌리티를 $47.5\%$에서 $51\%$로, 그리고 성능지수를 39.6에서 46.4로 향상시키었다. 바이어스 직류전장을 15kV/cm 이상 인가하면 성능지수가 46.4 이상으로 향상될 수 있으므로 이 물질이 마이크로파 전장 조절 소자에 응용될 수 있는 가능성이 있다.

적층형 커패시터의 응용을 위한 고유전 박막 재료의 연구 (The study of the high dielectric thin films for MLCC)

  • 장범식;최원석;문상일;장동민;홍병유;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.836-839
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    • 2001
  • Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.

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Deposition of YBCO/$BaZrO_3$ Films on MgO by Pulsed Laser Deposition

  • Chung, Jun-Ki;Ko, Rock-Kil;Yang, Joo-Saeong;Shi, Dong-Qi;Ha, Hong-Soo;Kim, Ho-Sup;Song, Kyu-Jeong;Yoo, Sang-Im;Moon, Seung-Hyun;Kim, Cheol-Jin;Park, Chan
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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    • pp.82-82
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    • 2004
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