• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.121-127
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• 1998

In this paper, to develop PTCR(Positive Temperature Coefficient of Resistance) thermistor with high withstanding voltage, Ca were added to. the compositions of $(Ba_{0.9165-X}-Sr_{0.08}-Ca_X-Y_{0.0035})TiO_3+MnO_2$ 0.02wt%+$SiO_2$ 0.5wt%. the effects of Ca additions were researched according the increasing of Ca from 0[mol%] to 20[mol%], and the electrical properties were investigated. As increasing Ca additions from 0[mol%] to 20[mol%], the grain size of the specimens was reduced from 11.1[${\mu}m$] to 6.15[${\mu}m$], and also the sintered density was reduced from 5.43[$g/cm^3$] to 5.05[$g/cm^3$] and their the breakdown voltages were increased from 163[V/mm] to 232[V/mm]. It is shown that the breakdown voltage was increased with amount of Ca additions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.311-312
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• 2006

The dielectric Properties of add $Li_2CO_3$ to ($Ba_{0.6}Sr_{0.4})TiO_3$ powder in this research, made thick film by tape casting method and annealing at $970^{\circ}C$ for 2 hours each from the $O_2$, Ar and O2-plasma atmosphere were investigated. The dielectric Properties of Ar atmosphere was to higher with tunability. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.15-18
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• 2006

REBCO coated conductors (RE: rare earth elements) have recently drawn great attention since they are known to possess stronger flux pinning centers in high magnetic fields compared with YBCO coated conductors. In this study, $GdBa_2Cu_3O_{7-d}(GdBCO)$ was selected to investigate the influence of the distance between target and substrate and substrate temperature on the superconducting properties of GdBCO films on the $SrTiO_3(100)$ substrate. Samples were fabricated by pulsed laser deposition (PLD) with a Nd:YAG laser (355nm). Under a given oxygen pressure of 800mTorr, we changed the distance between target and substrate from 5.5cm to 7.0cm and the substrate temperature from $750^{\circ}C\;to\;850^{\circ}C$. The crystallinity and texture of GdBCO films were analyzed by X-ray diffraction (XRD), and the surface morphology was observed by the scanning electron microscopy (SEM). Tc and Jc values were measured by the four point probe method. High quality GdBCO films with Tc of 89.7K and Jc over $1MA/cm^2$ at 77 K in self field were successfully fabricated by optimizing processing parameters. The detailed processing conditions, microstructure and superconducting properties will be presented for a discussion.

• Economic and Environmental Geology
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• v.23 no.2
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• pp.245-259
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• 1990

Petrochemical analyses of granitic rocks including trace element, REE and oxygen isotope were carried out to understand petrogenesis of plutonic rocks from the Chungju, Wolaksan and Jecheon granite batholiths, which might be related with tungsten-base metal-fluorite mineralization in the Hwanggangri metallogenic province. Different geochemical characteristics such as major and trace elements were found between Jurassic Daebo granitic rocks (Chungju, Jecheon, Wonju, and Boeun granitic rocks) and Cretaceous Bulgugsa granitic rocks (Wolaksan, Muamsa and Sokrisan granitic rocks). Cretaceous granitoids are characterized by high $SiO_2$and $K_2O$ contents and low $TiO_2$, $Al_2O_3$, MgO and CaO contents. They also have relatively high contents of trace elements(Zn, V, Co, Cr, Sr, and Ba) in comparison with the Jurassic granitoids. (Eu)/($Eu^*$) and $(La/Lu)_{CN}$ ratios of Jurassic plutons vary from 0.78 to 1.13 and from 26.02 to 30.5, respectively, while the ratios of Cretaceous ones range from 0.22 to 0.28 and from 4.42 to 14.2, respectively. The REE patterns of the Cretaceous and Jurassic granitic rocks have quite different Eu anomalies: large negative Eu anomaly in the former, and mild or absent Eu anomaly in the latter. The large Eu negative of Cretaceous granitic rocks are interpreted as a differentiated product of fractional crystallization of granitic magma deduced by Rayleigh fractionation model(Tsusue et al., 1987). Oxygen isotopic compositions of quartz for Daebo and Bulgugsa granitic rocks range from 9.98 to 10.51‰ and from 8.26 to 9.56‰, respectively. The Daebo granitic rocks enriched in $^{18}0$ suggest that the magma be undergone different partial melting processes from the Bulgugsa ones. Of the Bulgugsa granitoids, Wolaksan and Sokrisan mass have different contents of trace elements and ${\delta}\;^{18}0$ values of the silicate minerals, which indicate that they are not from the identical source of magma. Many mineral deposits are distributed in and/or near the Wolaksan and Muamsa granitic rocks, but a few mineral deposits are found in and near the Chungju and Jecheon granite batholiths. It might be depend on geochemisty of the related igneous rocks which have low contents of Ba, Sr, Co, V, Cr, Ni, Zn and high contents of Nb and Y, and on lithology of country rocks such as cabonate and noncarbonate rocks.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Progress in Superconductivity
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• v.6 no.1
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• pp.19-23
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• 2004

YBCO do superconducting quantum interference device (SQUID) magnetometers based on bicrystal Josephson junctions on 10 mm ${\times}$ 10 mm $SrTiO_3$ substrates have been fabricated. The pickup coil of the device was designed to have 16 parallel loops with 50-fm-wide lines. We could obtain optimised direct coupled YBCO SQUID magnetometer design with field sensitivity $B_{N}$ $\Phi$/ of $4.5 nT/\Phi_{0}$ and magnetic field noise $B_{N}$ of about $22 fT/Hz^{1}$2/ with an I/f corner frequency of 2 Hz measured inside a magnetically shielded room. Preliminary results of magnetocardiograph measurement using the HTS SQUID magnetometers show signal to noise ratio of about 110, which is comparable to the quality of a commercial MCG system based on Nb-SQUIDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.29-32
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• 2004

This work was devoted to an investigation of etching mechanisms for $(Ba,Sr)TiO_3$ (BST) thin films in inductively coupled $CF_4/Ar$ plasma. We have found that an increase of the Ar content in $CF_4/Ar$ plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of $CF_5/Ar$ mixing ratio. O-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].