• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.130.3-130
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.42.4-42
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.47.3-47
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• 1998

• Journal of Fisheries and Marine Sciences Education
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• 제19권1호
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• pp.1-7
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• 2007

The purpose of this study was to investigate geochemical characteristics of surface sediments in the Keum river estuary adjacent to coastal area. For this study we collected the 21 surface sediments samples. Mean size of surface samples was $3.24{\sim}6.65{\phi}$ on inner estuary and was $2.15{\sim}3.42{\phi}$ on outside estuary. Surface samples were composed of silt on inner estuary and were composed of sand which was more larger than $4{\phi}$ on outside estuary. Most major elements except CaO, $Na_2O$ showed good relationships between variation of contents and grain size. Contents of $Al_2O_3$, $Fe_2O_3$, MgO, $K_2O$, $TiO_2$, $P_2O_5$ and $M_nO$ were increased predominately owing to the variation of mean size of surface samples. Contents of Co, Cr, Cu, Li, Sr, Zn, La, Ce, Pb, Rb, Nd have a good relationships with grain size but Ba, Th, Sm have not. All of major and minor elements contents except $K_2O$ and Ba were less than world mean contents of shallow surface sediments but apprehend a high pollution possibility on silt sediments in the estuaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.660-663
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• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.719-722
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• 2004

In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.43-46
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• 2000

In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$TiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Structure and electrical characteristics of specimen was analyzed by Fractal Process. Thickness of BST ceramics thin films are about 2800[$\AA$]. Dielectric constant and loss of thin films was little decreased at 1[kHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the relation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Proceedings of the KIEE Conference
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1254-1256
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• 1994

0.15$(Ba_{0.95}Sr_{0.05})$O-0.15$(Sm_{2(1-x)}Nd-{2x})O_3-0.7TiO_2 (x=0{\sim}10[m/o])$ ceramics were fabricated by mixed-oxide method. Microwave dielectric properties was investigated with the contents of $Nd_2O_3$. Increasing the contents of $Nd_2O_3$ from 0 to 6[m/o], sintered density was increased 5.53 to $5.68[g/ cm^3]$. In the specimen with contents of $Nd_2O_3$(6[m/o]), dielectric content was maximum value of 78.14 and decreased with increasing the contents of $Nd_2O_3$. Quality factor was increased with the contents of $Nd_2O_3$.

• Electrical & Electronic Materials
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• 제9권5호
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• pp.439-444
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• 1996

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......