• Title/Summary/Keyword: BaSrTiO

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Geochemical and Nd-Sr Isotope Studies for Foliated Granitoids and Mylonitized Gneisses from the Myeongho Area in Northeast Yecheon Shear Zone (예천전단대 북동부 명호지역 엽리상 화강암류와 압쇄 편마암류에 대한 지구화학 및 Nd-Sr 동위원소 연구)

  • Kim, Sung-Won;Lee, Chang-Yun;Ryu, In-Chang
    • Economic and Environmental Geology
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    • v.41 no.3
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    • pp.299-314
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    • 2008
  • The NE-trending Honam shear zone is a broad, dextral strike-slip fault zone between the southern margin of the Okcheon Belt and the Precambrian Yeongnam Massif in South Korea and is parallel to the trend of Sinian deformation that is conspicuous in Far East Asia. In this paper, we report geochemical and isotopic(Sr and Nd) data of mylonitic quartz-muscovite Precambrian gneisses and surrounding foliated hornblende-biotite granitoids near the Myeongho area in the Yecheon Shear Zone, a representative segment of the Honam Shear Zone. Foliated hornblende-biotite granitoids commonly plot in the granodiorite field($SiO_2=61.9-67.1\;wt%$ and $Na_2O+K_2O=5.21-6.99\;wt%$) on $SiO_2$ vs. $Na_2O+K_2O$ discrimination diagram, whereas quartz-muscovite Precambrian orthogneisses plot in the granite field. The foliated hornblende-biotite granitoids are mostly calcic and calc-alkalic and are dominantly magnesian in a modified alkali-lime index(MALI) and Fe# [$=FeO_{total}(FeO_{total}+MgO)$] versus $SiO_2$ diagrams, which correspond with geochemical characteristics of Cordilleran Mesozoic batholiths. The foliated hornblende-biotite granitoids have molar ratios of $Al_2O_3/(CaO+Na_2O+K_2O)$ ranging from 0.89 to 1.10 and are metaluminous to weakly peraluminous, indicating I type. In contrast, Paleoproterozoic orthogneisses have peraluminous compositions, with molar ratios of $Al_2O_3/(CaO+Na_2O+K_2O)$ ranging from 1.11 to 1.22. On trace element spider diagrams normalized to the primitive mantle, the large ion lithophile element(LILE) enrichments(Rb, Ba, Th and U) and negative Ta-Nb-P-Ti anomalies of foliated hornblende-biotite granitoids and mylonitized quartz-muscovite gneisses in the Yecheon Shear Zone are features common to subduction-related granitoids and are also found in granitoids from a crustal source derived from the arc crust of active continental margin. ${\varepsilon}_{Nd}(T)$ and initial Sr-ratio ratios of foliated hornblende-biotite granitoids with suggest the involvement of upper crust-derived melts in granitoid petrogenesis. Foliated hornblende-biotite granitoids in the study area, together with the Yeongju Batholith, show not changing contents of specific elements(Ti, P, Zr, V and Y) from shear zone to the area near the shear zone. These results suggest that no volume changes and geochemical alterations in fluid-rich foliated hornblende-biotite granitoids may occur during deformation, which mass transfer by fluid flow into the shear zone is equal to the mass transfer out of the shear zone.

High $J_{c}$'s in just-rolled $Tl_{0.8}$$Pb_{0.2}$$Bi_{0.2}$$Sr_{1.8}$$Ba_{0.2}$$Ca_{2.2}$$Cu_{3}$$O_{x}$/Ag tapes (압영제조된 $Tl_{0.8}$$Pb_{0.2}$$Bi_{0.2}$$Sr_{1.8}$$Ba_{0.2}$$Ca_{2.2}$$Cu_{3}$$O_{x}$/Ag 선재에서의 높은 $J_{c}$)

  • 정대영;김희권;이해연;허홍수;오상수;이준호;김봉준;김영철
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 1999.02a
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    • pp.3-9
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    • 1999
  • The grain morphology, the changes in morphology and Jc with the thermo-mechanical treatment (TMT) history, the field dependence of Jc and the nature of intergranular bonding were studied in $T_{10.8}$$Pb_{.2}$$Bi_{0.2}$$Sr_{1.8}$$Ba_{0.2}$$Ca_{2.2}$$Cu_{3}$$O_{z}$/Ag tapes. As a result, incorporation of intermediate rolling during the final heat-treatment resulted in of plate-like TI-1223 grains, and thus enhanced Jc. Jc's near 2.5$\times$104 A/cm2 at 77 K and 0 T were obtained in just rolled tapes with an excellent reproducibility. The high Jc's seem to grain-connectivity easy recovery of excellent grain-connectivity during final heat-treatment after inter -mediate rolling, probably due to retarded T1 evaporation and excessive Ca content in the present composition. The strong field dependence of Jc even in low fields, however, indicated that there still existed significant weak-links and the degree of directional grain-alignment was far from the desired one. The intergranular binding in the tapes seemed to be mainly dominated by SIS junctions.

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High-$I_c$ single-coat YBCO films prepared by the MOD process

  • Lee, J.W.;Shin, G.M.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.13 no.4
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    • pp.22-25
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    • 2011
  • A single-coat $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) film of high critical currents ($I_c$) could be successfully fabricated by optimizing the viscosity of the coating solution in the metal-organic deposition (MOD) process. From a Ba-deficient coating solution (Y: Ba: Cu = 1: 1.5: 3) having the viscosity of 212 $mPa{\cdot}sec$, 0.9 ${\mu}m$-thick single coat YBCO film with the $I_c$ value of 289 A/cm-width ($J_c$ = 3.2 MA/$cm^2$) at 77 K was achievable on the $SrTiO_3$ (STO) substrate, which was superior to that of our previous report for 0.8 ${\mu}m$-thick single coat YBCO film from a stoichiometric coating solution (Y: Ba: Cu = 1: 2: 3) on the $LaAlO_3$ (LAO) substrate. This result might be attributed to denser and more homogeneous microstrcuture in the case of the YBCO film from the Ba-deficient coating solution.

Surface Modification of Ba0.6Sr0.4TiO3 by Trimethylsilyl Chloride as a Silylation Agent (Trimethylsilyl Chloride를 Silylation Agent로 사용한 Ba0.6Sr0.4TiO3 나노입자의 표면개질 연구)

  • Lee, Chan;Han, Wooje;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.127-132
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    • 2019
  • In this study, barium strontium titanate (BSTO) with high dielectric perovskite structure was synthesized by liquid-solid solution synthesis and the surface was modified using trimethylsilyl chloride (TMCS) as a silylation agent. Silylation surface modification is a method of reacting -OH ligand on the surface of BSTO nanoparticles with Cl in TMCS to generate HCl and replacing the ligand on the surface of nanoparticles with -Si, -CH3. Silylation was optimized by varying the concentration of TMCS, and the structure of the silicon network was confirmed by Fourier-transform infrared spectroscopy. In addition, the crystallinity of BSTO nanoparticles was confirmed by X-ray diffractometer and the size of the nanoparticles was calculated using Scherrer equation. The field emission scanning electron microscopic image observed the change of the surface-modified BSTO particle size, and the contact angle measurement confirmed the hydrophobic property of the contact angle of 120.9° in the optimized nanoparticles. Finally, the surface-modified BSTO dispersion experiment in de-ionized water confirmed the hydrophobic degree of the nanoparticles.

A Study on BST Thin Films by MOD Process (MOD법에 의한 BST 박막의 특성에 대한 연구)

  • 송재훈
    • Journal of the Microelectronics and Packaging Society
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    • v.3 no.1
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    • pp.33-40
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    • 1996
  • MOD법에 의해 BST박막을 제조하고 전기적 특성을 측정함으로써 마이크로 회로에 적용가능성을 타진하였다. MOD 공정의 선구물질로서 barium neodecanoate, strontium 2-ethylhexanoate 및 titanium dimethoxy 야-2-ethylheanoate를 합성하였다, 합성된 선구물 질들을 Ba0.5Sr0.5TiO3가 되도록 화학양론적으로 혼합하여 공통용매인 p-xylene에 녹인다음 기판위에 spin coating 방법으로 박막을 형성하여 건조하고 소성하였다. 사용된 기판은 ITO/glass, Pt/SiO2/Si, Pt/Ti/SiO2/Si 및 Pt foil을 사용하였다. 소성 속도를 빨리했을 경우 소성속도를 느리게 했을때에 비하여 훨씬 균일하고 치밀한 박막을 얻을수 있었다, 여러 가 지 제조조건의 변화에 따른 유전상수 I-V 특성 및 C-V 측성 등의 전기적 특성을 측정하고 고찰하였다.

A Study on Surface of BST Thin Films by Sol-Gel Methods (졸겔법으로 제작된 BST 박막의 구조적 특성)

  • 홍경진;민용기;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.377-380
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    • 2001
  • The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

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레이져 증착법으로 제조된 (Ba,Sr)$TiO_3-MFSFET $구조의 성장 및 응력에 의한 강유전성

  • 전성진;한근조;강신충;이재찬
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.87-87
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    • 1999
  • 본 연구에서는 Pulsed Laser Deposition(이하 PDL)방법을 이용하여 Si기판에 (Ba,Sr)TiO3(이하 BST)박막을 MFS-FET(Metal-Ferroelectric-Semiconductor Field-effect Transistor)구조로 제조하였으며 BST박막의 강유전성이 BST 박막에 유도되는 응력에 어떤 영향을 받는지 살펴보았다. 본 연구에서는 완충막을 사용함으로써 BST박막과 완충막간의 격자부정합을 이용하여 BST박막에 강유전성을 유도하려고 하였다. 또한 MFS-FET구조의 BST박막에 유도되는 응력조절을 위하여 BST박막과 완충막의 두께를 변화하였으며 XRD를 통한 구조 분석 및 C-V test를 통한 전기적 특성을 관찰을 하였다. PLD법을 통해서 epitaxial 성장된 BST 박막에서는 Si에 epitaxial 성장된 완충막과의 격자부정합에 의한 BST박막내의 자발분극의 발생이 예상된다. 따라서, 본 연구는 강유전체의 자발분극에 의하여 발생되는 C-V 이력현상이 BST박막과 완충막과의 격자부정합에 의한 응력에 의해 발생될 것으로 예상하여, BST 박막에 유도되는 응력과 C-V 이력현상의 관계를 통하여 상온에서 상유전성을 갖는 BST가 응력에 의하여 어느 정도의 강유전성을 나타내는지를 밝히기 위해 진행되었다. 본 연구에서 사용된 완충막은 YSZ(Yttria Stabilized Zirconia)박막으로 0.4mTorrO2 분위기 하에서 600~80$0^{\circ}C$의 온도에서 증착하여 상형성을 살펴보았고 $700^{\circ}C$에서 epitaxial 성장을 확인하였으며 두께는 30~$\AA$으로 변화하였다. 또한 BST박막은 완충막과의 전압분배를 고려해 300~2000$\AA$으로 두께를 변화를 시키며 증착하였다. MFS 구조에서 Al 전극을 사용하여 완충막과 BST박막간의 두께 변화에 따른 Capacitance - Voltage(C-V) 측정을 하였으며 이를 통하여 강유전상의 특성인 C-V 이력현상을 관찰하였다. 그 결과 YSZ 박막에서는 C-V 이력현상이 나타나지 않았으며 BST 박막에서는 약 1.2V의 C-V이력현상이 보였다.

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Study on Damage Reduction of $(Ba_{0.6}Sr_{0.4})TiO_{3}$ Thin Films in $Ar/CF_{4}$ Plasma ($Ar/CF_{4}$ 유도결합 플라즈마에서 식각된 $(Ba_{0.6}Sr_{0.4})TiO_{3}$ 박막의 손상 감소)

  • Kang, Pil-Seung;Kim, Kyung-Tae;Kim, Dong-Pyo;Kim, Chang-Il;Hwang, Jin-Ho;Kim, Tae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.171-174
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    • 2002
  • The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

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