• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.194-196
• /
• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.58-60
• /
• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

• 한국세라믹학회지
• /
• 제21권4호
• /
• pp.341-348
• /
• 1984

$BaTiO_3$ and $SrTiO_3$ were mixed with the mole ratio of 35:65， 50:50 and 65:35 and heated at 1100~120$0^{\circ}C$ for 1~64 hours. The dielectrics of $BaTiO_3$-$SrTiO_3$ system were investigated as a function of amount of solid solution formed. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of heating of soaking time for the same composition and heating temperature. This can be explained by the homogeneous distribution of $Ba^{2+}$ and $Sr^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$ in the $BaTiO_3$-$SrTiO_3$system because of decreasing the lattice constant.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
• /
• pp.289-290
• /
• 2006

[ $SrTiO_3$ ] is usually added as shifters in order to move the $T_C$ of $BaTiO_3$ to lower temperatures because it is well established that the $T_C$ of $BaTiO_3$ decreases linearly with a solid solution of $Sr^{+2}$ in place of $Ba^{+2}$. It is not fully understood yet, however, how $SrTiO_3$ influences on the peak value of the dielectric constant $(\varepsilon_{max})$ at the $T_C$ of $BaTiO_3$. This research reports the effect of $SrTiO_3$ addition on εmax at the $T_C$ of $BaTiO_3$ ceramics. Based on the chemical composition and the grain size dependence of the dielectric property of $BaTiO_3$ ceramics, functionally graded $(Ba,Sr)TiO_3$ composites were designed and fabricated. Multi-layered $(Ba,Sr)TiO_3$ composites with a compositional gradient of $SrTiO_3$ exhibited a low temperature coefficient and high dielectric constant in a wide temperature range.

• The Korean Journal of Ceramics
• /
• 제5권2호
• /
• pp.189-194
• /
• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.400-403
• /
• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.311-312
• /
• 2007

In this study, composite $BaSrTiO_3$ has been studied for high frequency device applications. Composite $Ba_{0.5}Sr_{0.5}TiO_3$ has high dielectric permittivity and low loss tangent at the relative frequency range from MHz to GHz. 10,30 and 50 wt% of epoxy doped $Ba_{0.5}Sr_{0.5}TiO_3$ powders were prepared with bisphenol A and F polymer employing ball milling process. Epoxy/($BaSrTiO_3$) composites thick films were screen printed on the Cu plated PCB substrates through screen printing methods. The specimens were designed for the embedded capacitor applications. Temperature dependent dielectric permittivity of Epoxy doped $BaSrTiO_3$ ceramics was measured.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.45-48
• /
• 1998

A BaTiO$_3$ was annexed to SrTiO$_3$, (x)BaTiO$_3$-(1-x)SrTiO$_3$ (0.7$\leq$X$\leq$1) ceramics with stable dielectric and electrical properties in high voltage were manufactured. Structural, dielectric and electrical properties were surveyed with the contents of SrTiO$_3$. The open porosity and sintering density were excellent in 0.9BaTiO$_3$-0.1SrTiO$_3$, the grain size of 0.9BaTiO$_3$-0.1SrTiO$_3$ was maximum at 12.40[${\mu}{\textrm}{m}$]. Increasing SrTiO$_3$ mol ratio, the curie temperature was shifted low temperature and the supreme permittivity was increased. In line with increasing of supplied voltage, permitivity was decreased slightly.

• 대한전자공학회논문지SD
• /
• 제37권11호
• /
• pp.18-24
• /
• 2000

(Ba,Sr)$TiO_3$ 박막은 ULSI-DRAM 즉 1-4 Gbit급 DRAM용 셀(cell) 커패시터의 새로운 유전물질로 각광받고 있다. 본 연구에서는 ICP 장비에서 $BCl_3/Cl_2/Ar$ 플라즈마로 (Ba,Sr)$TiO_3$ 박막을 식각하였다. 이때 RF power/dc bias voltage는 600W/-250V, 반응로의 압력은 10mTorr 이었다. $Cl_2/(Cl_2+Ar)$은 0.2로 고정하였고, $BCl_3$ 가스를 첨가하면서 (Ba,Sr)$TiO_3$ 박막을 식각하였다. $BCl_3$ 가스를 10% 첨가하였을 때, $480{\AA}/min$으로 (Ba,Sr)$TiO_3$ 박막은 가장 높은 식각 속도를 나타내었다. $Cl_2/Ar$가스에 $BCl_3$의 첨가 비에 따른 Cl, BCl 및 B의 라디칼 밀도를 optical emission spectroscopy(OES)에 의해 구하였다. $BCl_3$를 10% 첨가하였을 때 Cl의 라디칼 밀도가 가장 높았다. (Ba,Sr)$TiO_3$ 박막의 표면반응을 규명하기 위하여 XPS 분석을 수행한 결과 이온 bombardment 식각이 Ba-O 결합을 파괴하고 Ba와 Cl의 결합형태인 $BaCl_2$을 제거하기 위하여 필요하다. Sr과 Cl의 결합의 양은 많지 않고, Sr은 주로 물리적인 스퍼터링에 의하여 제거된다. Ti와 Cl은 화학적으로 반응하여 $TiCl_4$ 결합형태로 용이하게 제거된다. 식각후 단면사진을 SEM을 통해 본 결과 식각단면이 약 65~70$^{\circ}$ 정도였다.

• 한국분말재료학회지
• /
• 제18권1호
• /
• pp.41-48
• /
• 2011

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr)$TiO_3$ powder. Porous (Ba,Sr)$TiO_3$ ceramics were prepared by pressureless sintering at $1350^{\circ}C$ for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr)$TiO_3$ ceramics were investigated. The porosity of porous (Ba,Sr)$TiO_3$ ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from $7.51\;{\mu}m$ to $5.96\;{\mu}m$ with increasing carbon black contents. PTCR jump of the (Ba,Sr)$TiO_3$ ceramics prepared by adding carbon black was more than $10^5$, and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr)$TiO_3$ ceramics prepared by adding 40 vol% carbon black showed an excellent value of $9.68{\times}10^5$, which was above two times higher than that in (Ba,Sr)$TiO_3$ ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr)$TiO_3$ ceramics. It was considered that carbon black is an effective additive for preparing porous $BaTiO_3$ based ceramics. It is believed that newly prepared (Ba,Sr)$TiO_3$ cermics can be used for PTC thermistor.