• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.441-448
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• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• Bulletin of the Korean Chemical Society
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• v.16 no.12
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• pp.1180-1184
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• 1995

The precursors of Ba1-xSrxTiO3(x=0.0-0.3) were prepared by the rapid addition of aqueous solution of titanyl oxalate to the mixed aqueous solution of barium and strontium at room temperature. The optimum pH was theoretically calculated from the equilibrium constants and solubility products. The chemical formula of the precursors obtained corresponded to Ba1-xSrxTiO(C2O4)2·4H2O(x=0.0-0.3) as determined by thermal gravimetric analysis. The precursors were converted to stoichiometric Ba1-xSrxTiO3(x=0.0-0.3) with a particle size of 0.01-0.04 μm. As increasing the amount of strontium substituted to barium sites, the structure of crystal changed from the tetragonal phase to the cubic and the unit cell volume was decreased.

• Journal of the Microelectronics and Packaging Society
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• v.1 no.2
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• pp.105-112
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• 1994

BaTiO3 의 B-site에 0-0.03 몰 범위의 NiO를 첨가한 Ba1-xSrxTi1-y-wNiyZrwO3-y 유전 체에서 NiO 첨가가 유전특성 및 절연저항의 내환원성에 미치는 영향을 조사하였다. B-site Ni 치환에 의해 a 축의 격자상수는 증가하고 c 축의 격자상수는 감소하여 정방성 c/a가 감 소하였으며 단위격자의 부피는 증가하였다. NiO 첨가에 따라 큐리온도는 저온으로 이동하 였으며 큐리온도의 변화율은 소결분위기에 영향을 받았다. NiO가 첨가되지 않은 조성에서 는 산소분압 109 MPa의 환원분위기 소성에 의해 비정항이 107$\Omega$.cm로 저하되었으나 0.01 몰이상의 NiO를 첨가한 조성에서는 공기중 소결시 얻을수 있었던 1011$\Omega$.cm로 저하되었으 나 0.01 몰 이상의 NiO를 첨가한 조성에서는 공기중 소결시 얻을 수 있었던 1011$\Omega$.cm 이 상의 비저항을 유지하였다.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.