• Title/Summary/Keyword: Ba doping

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Characterization Of YBCO HTSC-Thick film With addiction of $CeO_2$ ($CeO_2$첨가에 따른 YBCO고온초전도 후막의 특성)

  • 윤기웅;임성훈;홍세은;강형곤;한용희;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.239-242
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    • 2000
  • To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

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Effect of Mn Addition on the Dielectric Loss characteristics of $BaTiO_3$ Ceramics ($BaTiO_3$ 세라믹의 유전손실에 미치는 Mn 첨가의 영향)

  • 김태중;한주환;이재열;이희영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.436-439
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    • 2000
  • Change of dielectric loss of use in high relative permitivity capacitor BaTiO$_3$ ceramic depends on Mn doping have been investigated. The powders used in this study were commercial BaTiO$_3$, TiO$_2$and, MnCO$_3$. Sample was fabricated by conventional ceramic process. The quantity of Mn was changed gradually from 0.lmol% to 10mo1%. The sintering densities were reduced with increasing amount of MnCO$_3$. This result is because of increase of low density second phase BaMnO$_3$. When the samples were doped by over 0.2mol% of MnCO$_3$, average grain sizes were enlarge to several tens ${\mu}{\textrm}{m}$. The dielectric losses were reduced by Mn doping to lmol% but, increased from lmol% to 10mo1% gradually.

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Enhancement of critical current density in $BaCeO_3$ doped $YBa_2Cu_3O_{7-\delta}$ thin Films deposited by TFA-MOD process (TFA-MOD공정에서 $BaCeO_3$ 첨가에 의한 $YBa_2Cu_3O_{7-\delta}$ 박막의 임계전류밀도 증가)

  • Lee, Jong-Beom;Kim, Byeong-Joo;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.1
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    • pp.1-5
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    • 2008
  • The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

Effect of (Al, Nb) Co-Doping on the Complex Dielectric Properties and Electric Modulus of BaTiO3-Based Ceramics

  • Ziheng Huang;Ruifeng Niu; Depeng Wang;Weitian Wang
    • Korean Journal of Materials Research
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    • v.34 no.7
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    • pp.321-329
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    • 2024
  • In this work, a series of BaTiO3-based ceramic materials, Ba(Al0.5Nb0.5)xTi1-xO3 (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO3 does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al3+ and Nb5+ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequency-dependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 104) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al0.5Nb0.5)xTi1-xO3 ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO3-based ceramics, which is important for dielectric and energy storage applications.

Development of PTCR Ceramics Device Fabricated by Liquid Phase Addition Method (액상첨가법에 의한 PTCR세라믹스 소자 개발)

  • Lee, Dong-Soo;Yun, Young-Ho;Park, Sung;Lee, Byung-Ha
    • Journal of the Korean Ceramic Society
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    • v.34 no.7
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    • pp.703-712
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    • 1997
  • The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$\times$106 respectively.

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Effect of $CeO_2$-addition and Particle Size of Doping Material on Characteristic of High-$T_c$ Superconducting Thick Film Using Diffusion Process ($CeO_2$첨가와 도포물질의 입자크기가 화산공정을 이용한 고온초전도 후막의 특성에 미치는 영향)

  • 임성훈;강형곤;홍세은;윤기웅;황종선;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.152-157
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    • 2001
  • For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.

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Effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulks (Nd-Ba-Cu-O 벌크 초전도체의 초전도 특성에 미치는 Ca 첨가계의 영향)

  • 이훈배;위성훈;유상임
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.1
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    • pp.21-25
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    • 2002
  • The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of $Nd_{1.8-x}Ca_{x]Ba_{2.4}Cu_{3.4}O_{y}$ (x= 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1%O$_2$ in Ar. Magnetization measurements revealed that the critical temperatures(Tc) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x : 0.0 to 0.15, respectively, and thus critical current densities(Jc) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in $NdBa_2Cu_2O_y(Nd123) and Nd_4Ba_2Cu_2O_{10}(Nd422)$,/TEX> were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of Tc is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.

The Study on Characterization of Current-limiting with Diffusion Thickness of High-Tc Superconductor Thick Film (고온초전도후막의 확산두께에 따른 전류제한 특성연구)

  • Im, Seong-Hun;Gang, Hyeong-Gon;Han, Tae-Hui;Mo, Chang-Ho;Im, Seok-Jin;Han, Byeong-Seong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.4
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    • pp.210-218
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    • 2000
  • For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

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Capacitance Aging Behavior of Acceptor-Doped BaTiO3 under DC Electrical Field (직류 전계에 의한 Acceptor 첨가 BaTiO3의 유전특성 열화 현상)

  • Hahn, Dong-Woo;Han, Young-Ho
    • Journal of the Korean Ceramic Society
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    • v.46 no.2
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    • pp.219-223
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    • 2009
  • Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.