• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.724-727
• /
• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• Transactions of the Korean hydrogen and new energy society
• /
• v.23 no.6
• /
• pp.670-677
• /
• 2012

Perovskite-type oxides such as doped barium zirconate ($BaZrO_3$) show high proton conductivity and chemical stability when they are exposed to hydrogen and water vapour containing atmospheres, thus it can be applicable to the hydrogen separation and the fuel cell electrolyte membranes. However the high temperature ($1700-1800^{\circ}C$) and long sintering times (24h) are generally required to prepare the fully densified $BaZrO_3$ pellets. These sintering conditions lead to the limitation of the grain size growth and the degradation of conductivity due to the acceleration of BaO evaporation at $1200^{\circ}C$. Here we demonstrate NiO-doped $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ with lower calcination and sintering temperature, less experimental procedure and lower process cost than the conventional mixing method. The stoichiometry of $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ was optimized by the control of excess amount of Ba (5mol%) to minimized BaO evaporation. We found that the crystal size of NiO-doped $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ was increased with increase of calcination temperature from XRD analysis. NiO-doped $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ powder was calcined at $1000^{\circ}C$ for 12h when its showed the highest conductivity of $3.3{\times}10^{-2}s/cm$.

• Applied Science and Convergence Technology
• /
• v.26 no.5
• /
• pp.143-147
• /
• 2017

Structural studies on the addition characteristics of Nb ions to $BaTiO_3$ solid solutions were performed by XRD and SEM/EDS technique. The X-ray diffraction peaks of the (111), (200) and (002) planes of Nb-doped $BaTiO_3$ solid solutions with different mole% of Nb were analyzed. We also investigated the relationship between the dielectric and structural properties of Nb-doped $BaTiO_3$. The transition temperatures of $BaTiO_3$ solid solution doped with 0.5mole%Nb and 1.0 mole%Nb were ${\sim}116^{\circ}C$ and ${\sim}87^{\circ}C$, respectively, which were found to be shifted to very low temperature from the transition temperature of pure $BaTiO_3$ (about $125^{\circ}C$). As a result of analysis of 1/K versus T and ln[$(1/K)-(1/K_m)$ versus ($T-T_m$)] of the two compositions used in this experiment, the diffusivity slightly differs from that of pure $BaTiO_3$ at temperatures above Curie temperature. And this characteristic was analyzed by applying the modified Curie-Weiss law.

• Journal of the Korean Ceramic Society
• /
• v.22 no.5
• /
• pp.54-60
• /
• 1985

This study is concerned with the mechanism of PTCR in $BaTiO_3$ ceramics doped by $Nb^{+5}$ Since the vacancy compensation layer at the grain boundary of n-type doped $BaTiO_3$ ceramics has been known as a major factor for surface state to give PTCR phenomena the dependence of PTCR on such vacancy compensation layer was attemped to be confirmed experimentally in this study. For the experiment quenching and annealing at various temperature after sintering were adopted to induce difference in the thickness of vacancycompensation layer so as to exihibit difference of PTCReffect eachother. The TEX>$Ba^{++}$ cocentration at the grain and grain boundary was measured by EDAX to confirm the formation of the vacancy compensation layer. It was found that i)either decrease in the temperature for quenching ii) or increase in the temperature for annealing improves the PTCR effect clearly iii)increase in TEX>$Ba^{++}$ concentration at the grain boundary results in the improvement of PTCR effect. It was concluded that all the experimental results gave the evidence for the dependence of PTCR effect on the vacancy compensation layer at the grain boundary which had been induced possibly by the $Ba^{++}$ diffusion by the heat treatment conducted.

• Journal of the Korean Ceramic Society
• /
• v.22 no.4
• /
• pp.61-65
• /
• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.887-894
• /
• 2000

In this paper, we have studied the effect of earth (Gd, Er) on the various properties (microstructure, shrinkage, initial permeability, permeability as a function of frequency, etc) of Ba-ferrite. The permeabilities were analyzed by Impedance Analyzer(100KHz~40MHz) and Network Analyzer(30KHz~3㎓). As the result of XRD, all of the Ba-ferrite doped with rat earth was found to be Y-hexagonal phase. The resonance frequencies at the maximum imaginary value of complex permeability were observed near 2㎓. The complex permeabilities of the Ba-ferrite doped with Gd$_2$O$_3$at 3wt% and doped with Er$_2$O$_3$at 3wt% and 5wt% as a function of frequency showed the highest value at sintered temperature at 95$0^{\circ}C$/3h.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.05a
• /
• pp.785-786
• /
• 2012

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.287-290
• /
• 2003

Sol-gel processing of $BaTiO_3$ ceramics doped with La(0.01~1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum iso-propoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results showed that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_3$ powders and sintering conditions used.

• The Korean Journal of Ceramics
• /
• v.4 no.2
• /
• pp.68-71
• /
• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.39-42
• /
• 2006

A $Eu^{2+}$ doped $BaAl_2S_4$ phosphor was synthesized from BaS, EuS, Al and S powder by vacuum heat treatment. The synthesized powder at $850^{\circ}C$ was composed of only $BaAl_2S_4$ phase. The photoluminescence of $Eu^{2+}$ doped $BaAl_2S_4$ phosphor showed the blue emission centered at 470nm and CIE color coordinate at x=0.12, y=0.11.