• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1408-1410
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• 2001

The 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. In the case of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics sintered at 1325$^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 23.95, 70,200, -55.8ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• 한국세라믹학회지
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• 제36권4호
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• pp.343-353
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• 1999

2.45 GHz의 microwave가 수열 합성법으로 제조된 BaTiO3 분말의 특성에 미치는 영향을 조사하였다. 700W 출력으로 반응시켰을 때, microwave-autoclave system에서는 약 5분만에 BaTiO3 결정이 형성되기 시작하여, 10분 이상의 반응에서는 더 이상 결정성 증가는 관찰되지 않았다. Microwave-system의 경우에는 15분만에 결정이 형성되기 시작하여, 1시간정도의 반응으로 충분한 BaTiO3 분말을 얻을 수 있었다. Microwave를 이용한 균일가열의 영향으로 분말들은 균일하게 분산되어 있었고, 기존의 전기적인 가열 방법에서 나타나는 응집 현상이나 grain의 성장 등은 보이지 않았다. 제조된 분말의 크기는 보통 30~60 nm정도였는데, 졸 안의 Ba/Ti의 비가 분말의 크기를 결정하는데 중요한 역할을 하였다. 이는 여분의 바륨이 Ba(OH)2등과 같은 다른 상을 형성하여 BaTiO3 분말의 계면에 얇은 막을 형성하여 분말들의 응집 현상이나 grain의 성장을 억제하는 것으로 추정하였다. M1-crowave-autoclave 에서는 15분 정도의 반응만으로도 미량이지만 tetragonal-BaTiO3를 직접적으로 형성할 수 있었고, microwave-reflux에서는 25$0^{\circ}C$의 건조로써 미량의 tetragonal-BaTiO3를 얻을 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 추계연구발표회 논문개요집
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• pp.84-85
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• 1991

• 한국재료학회지
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• 제18권9호
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1550-1552
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• 1999

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• 대한전자공학회논문지SD
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• 제40권3호
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• pp.19-32
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• 2003

전통적인 광굴절 결합 변환 상관기는 원하는 상관 출력을 얻기 위해 입력되는 신호 대 펌프빔의 세기비가 2광파 혼합의 전달함수가 포화될 정도로 충분히 커야 한다. 그 결과 입력영상에 잡음이 있을 경우 상환 출력의 신호 대 잡류비가 떨어진다. 본 논문에서는 BaTiO₃의 특성을 이용하여 광굴절 결합 변환 상관기의 신호대 잡음비 개선 방법을 제안하였다. 입력빔의 세기비를 작게 하여 에너지 전달이 포화되지 않도록 하고, 신호빔과 매질의 표면이 이루는 각도를 크게 하여 매질내에서의 두 빔의 유효 상호작용 길이가 짧아지도록 하였다. 그 결과 고주파 영역의 이득은 줄어드는 반면 저주파 영역은 2광파 혼합의 포화이득을 가지게 되어 입력영상에 잡음이 있는 경우 신호 대 잡음비가 개선되었고, 입력빔의 세기비가 작아져 실제 구현이 용이해졌다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).