• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.825-828
• /
• 2008

$Sr_xBa_{(1-x)}TiO_3$ red phosphors doped with Pr(0.13 mol%) and Al(O.23 mol%) were synthesized by solid state reaction method. Orthorhombic perovskite structure with increasing value of x in $Sr_xBa_{(1-x)}TiO_3$:Pr,Al phosphors changed to cubic perovskite structure. Emission bands at 615 nm and 492 nm in $Sr_{0.25}Ba_{0.75}TiO_3$:Pr,Al and $BaTiO_3$:Pr,Al phosphors were observed at room temperature. The main cause of green luminescence at 492 nm was explained by the change of the 4f5d band.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.4
• /
• pp.166-171
• /
• 2015

In this study, using solid-state and flux, $Y_3Al_5O_{12}:Er^{3+}\;(YAG:Er^{3+})$ powders were successfully synthesized at low temperatures. To analyze the crystallinity of powders according to the synthesis or non-synthesis of powders and powder calcination temperatures, X-ray diffraction (XRD) was measured. In the case of pure YAG, when YAG was analyzed using the general solid-phase method, it was calcined for 12 hours at $1400^{\circ}C$ and pure YAG phase could be obtained. But when $BaF_2$ was added to YAG, YAG was synthesized at lower temperature (1000^{\circ}C$). It was thus found that the synthesis temperature could be lowered by about $400^{\circ}C$. Also, when BaF2 with an optimal concentration was added to $YAG:Er^{3+}$, the particle shape and size according to synthesis temperatures were surveyed, and corresponding luminous intensity was discussed.

• ETRI Journal
• /
• v.14 no.4
• /
• pp.217-227
• /
• 1992

최근 이동통신 및 위성통신 등 마이크로웨이브를 이용하는 통신분야의 시장이 급속히 신장됨에 따라 RF(Radio Frequency) 부품의 산업적 중요성이 부각되고 있다. RF 부품은 크게 능동부품과 필터로 대표되는 수동부품으로 대별되는데, duplexer나 필터는 현재 대부분 마이크로웨이브 세라믹유전체를 사용 제조하고 있다. 본 연구에서는 이들 부품들에 사용가능한 세라믹유전체를 개발하기 위한 연구의 일환으로 BaO-$Sm_2$$O_3$-$TiO_2$계 세라믹의 마이크로웨이브 유전특성과 여기에$La_2\$$O_3$를 첨가한 계인 BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹유전체를 제조하여 마이크로웨이브 유전특성을 살펴보았다. RF 부품에 사용되는 세라믹유전체는 높은 유전율$\varepsilon_r$높은 품질계수 (Q) 및 안정된 온도특성 $\tau_f$ 등의 조건을 충족시켜야한다. 본 연구에서는 유전체의 $\varepsilon_r$ 및 Q의 측정에 디스크형 유전체공진기와 두개의 도체평행판을 사용한 Hakki-Coleman법을 사용하였으며, $\tau_f$는 fixture를 항온조에 넣어서 측정하였다. BaO-$Sm_2O_3-TiO_2$계의 경우 소결온도 $1350^{\circ}C$까지는 $\varepsilon_r$및 Q가 증가하나 그 이상의 소결온도에서는 감소한다. 그리고 $\tau_f$는 $-35_{ppm}/^{\circ}C$에서 소결온도에는 거의 의존하지 않았다. $La_2O_3$를 첨가한BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹의 마이크로웨이브 유전특성은 $La_2O_3$의 첨가량이 많을수록 $\tau_f$값이 음에서 양으로 이동함이 관찰되었으며, x=0.15에서 $\tau_f$가 0이 되어 마이크로웨이브 부품용 마이크로웨이브 세라믹유전체를 얻을 수 있음이 확인되었다.

• Korean Journal of Materials Research
• /
• v.6 no.2
• /
• pp.228-234
• /
• 1996

BzCuO2 의 생성 자유에너지를 이중 이온교환된 Ba2+-$\beta$/$\beta$"-AI2O3를 전해질로 사용하여 다음과 같은 생성셀로부터 측정하였다. Au(po2=10-3)/Au+BaCuO2+CuO// Ba2+-$\beta$/$\beta$"-Au이 갈바닉셀에서 BzCuO2 의 임의의 생성식과 생성자유에너지는 다음과 같다. BaO+CuO=BaCuO2 $\Delta$fGo/kJ.mol-1=-77.3-3.3x10-3T/K.3x10-3T/K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.284-287
• /
• 2002

The $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%) were prepared by the conventional mixed oxide method. The sintering temperature and time were $1350^{\circ}C$, 3hr., respectively. The structural properties were investigated with sintering temperature by XRD. Also the microwave dielectric properties of the $BaTi_{4}O_{9}$ ceramics were studied. According to the X -ray diffraction patte구 of the $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), the orthorhombic $BaTi_{4}O_{9}$ structure was appeared. In the case of $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), dielectric constant $(\varepsilon_{r})$, quality factor$(Q{\times}f_r)$ and temperature coefficient of resonant frequency$(\tau_{f})$ were 40.8, 43,270 and $2.5ppm/^{\circ}C$, respectively.ࠀࠀ Ѐ耀
Āࠀ 耀耀  ࠀက@ĀĀȀ
ЀĀကЀကࠀ耀Ȁ@ࠀ
Ѐ
Ѐ€Ȁ耀
 @䀀က 䀀Ѐ€耀 Ȁ @ ࠀЀЀကȀȀЀ Āက蠀

• Journal of the Korean institute of surface engineering
• /
• v.54 no.3
• /
• pp.112-118
• /
• 2021

Dy³⁺- and Eu³⁺-codoped BaWO₄ phosphors for white light-emitting diode were synthesized with different activator ions via a solid-state reaction process. The structural, morphological, and optical properties of the BaWO₄:Dy³⁺,Eu³⁺ phosphors were investigated as a function of Eu³⁺ concentration at a fixed concentration of Dy³⁺ ions. XRD patterns exhibited that all the synthesized phosphors had a tetragonal system, irrespective of the concentrations of Dy³⁺ and Eu³⁺ ions. The excitation spectra of the synthesized phosphors were composed of three intense bands centered at 251, 355, and 393 nm and several weak peaks. For the BaWO₄:Dy³⁺,Eu³⁺ phosphors synthesized with 1 mol% of Eu³⁺, the emission spectra under ultraviolet excitation at 393 nm showed two strong blue and yellow bands at 485 and 577 nm corresponding to the ⁴F_9/2⁶H_15/2 and ⁴F_9/2⁶H_13/2 transitions of Dy³⁺ ions, respectively and several weak bands in the range of 600-700 nm resulting from the 4f transitions of Eu³⁺ ions. As the concentration of Eu³⁺ ions increased, intensities of the blue and yellow emission bands gradually decreased while those of the red emissions increased rapidly and the energy transfer efficiency from Dy³⁺ to Eu³⁺ ions was 95.3% at 20 mol% of Eu³⁺. The optimum white light emission with x=0.363, y=0.357 CIE 1931 chromaticity coordinates was obtained for the sample doped with 5 mol% Dy³⁺ and 1 mol% of Eu³⁺.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1148-1151
• /
• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.653-656
• /
• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

• Korean Journal of Materials Research
• /
• v.24 no.4
• /
• pp.207-213
• /
• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• Korean Journal of Materials Research
• /
• v.26 no.2
• /
• pp.67-72
• /
• 2016

$BaMoO_4:Tb^{3+}$ phosphor powders were synthesized with different concentrations of $Tb^{3+}$ ions using the solid-state reaction method. XRD patterns showed that all the phosphors, irrespective of the concentration of $Tb^{3+}$ ions, had tetragonal systems with two main (112) and (004) diffraction peaks. The excitation spectra of the $Tb^{3+}$-doped $BaMoO_4$ phosphors consisted of an intense broad band centered at 290 nm in the range of 230-330 nm and two weak bands. The former broad band corresponded to the $4f^8{\rightarrow}4f^75d^1$ transition of $Tb^{3+}$ ions; the latter two weak bands were ascribed to the $^7F_2{\rightarrow}^5D_3$ (471 nm) and $^7F_6{\rightarrow}^5D_4$ (492 nm) transitions of $Tb^{3+}$. The main emission band, when excited at 290 nm, showed a strong green band at 550 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ ions. As the concentration of $Tb^{3+}$ increased from 1 to 10 mol%, the intensities of all the emission lines gradually increased, approached maxima at 10 mol% of $Tb^{3+}$ ions, and then showed a decreasing tendency with further increase in the $Tb^{3+}$ ions due to the concentration quenching effect. The critical distance between neighboring $Tb^{3+}$ ions for concentration quenching was calculated and found to be $12.3{\AA}$, which indicates that dipole-dipole interaction was the main mechanism for the concentration quenching of the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ in the $BaMoO_4:Tb^{3+}$ phosphors.