• Title/Summary/Keyword: BSSCCO

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Characteristics of BSCCO Thin Film by Layer-by-layer Deposition (순차 스퍼터 법에 의한 BSCCO 박막의 특성)

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Gwi-Yeol;Oh, Geum-Gon;Choi, Woon-Shik;Cho, Choon-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.281-283
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    • 2001
  • $Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

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Characteristics of BSCCO Thin Film by Layer-by-layer Deposition (순차 스퍼터 법에 의한 BSCCO 박막의 특성)

  • 이희갑;박용필;김귀열;오금곤;최운식;조춘남
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
    • /
    • pp.281-283
    • /
    • 2001
  • Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

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Electrical Properties of HTS Using Chemical Process (Bi 소결체의 전기적 특성)

  • Lee, Sang-Heon;Choi, Yong;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.34-35
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    • 2007
  • A high Tc superconducting with a nominal composition of BSSCCO was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h. the (001) peak of the high Tc phase was cleary observed.

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