• Title/Summary/Keyword: BSCCO 2212

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The application of hydrated fine MgO particles for flux pinning center in the HTS-BSCCO system

  • 김성환;김철진;정준기;박성창;유재무
    • Progress in Superconductivity
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    • v.3 no.2
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    • pp.188-192
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    • 2002
  • To introduce flux pinning center in HTS-BSCCO system, nano-size MgO particles were uniformly distributed within the Bi-2223 grain by partial hydration of MgO. The existing method MgO doped Bi-2223 used nato-size MgO powders, which resulted in agglomeration during mixing or grain growth during heat-treatment due to the high surface energy of the fine particles. By hydration of the MgO surface, the agglomeration of the MgO powders was avoided and the size of remaining MgO core was controlled by changing hydration medium and time. The thin film obtained by spin coating of (Bi_$1.8/Pb_{0.4}$)$Sr_2$$_{Ca}$$2.2/Cu_3$ $O_{y}$ nitrate solution mixed with hydrated MgO showed the even distribution of nano-size MgO particles in the Bi-2212 grains.s.s.

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Bi-sticking Coefficient of Bi-superconducting Thin Film Prepared by IBS Method

  • Lee, Hee-Kab;Lee, Joon-Ung;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.213-216
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    • 1999
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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Epitaxial Growth of BSCCO Thin Films Fabricated by Son Beam Sputtering

  • Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.484-488
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    • 1997
  • BSCCO thin film is fabricated cia both processes of co-deposition and layer-by-layer deposition at an ultralow growth rate using ion beam sputtering method. The adsorption of Bi atom and the appearance of Bi-2212 phase shows large differance between both processes. It is found that the resident time of Bi vapor species on the surface of the substrate strongly dominates the film composition and the formation of the structure.

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Fabrication of Ultra Fine MgO Particles Added BSCCO 2223 Tapes with Different Precursor Phase Constituent

  • Ko, Jae-Woong;Yoo, Jai-Moo;Kim, Hai-Doo;Chung, Hyung-Sik
    • Progress in Superconductivity
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    • v.1 no.1
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    • pp.56-60
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    • 1999
  • Ultra fine MgO particles added BSCCO tapes were fabricated by tape casting using Doctor Blade Method and enclosed by silver foil for different starting compositions (that is, 2223 major, 2212 major). In order to obtain optimum microstructure, thermomechanical treatment was done. Microstructure and phase were analyzed by XRD, SEM and DTA. The critical current density was measured under magnetic field at 77K. The tapes fabricated from the precursor powder with BSCCO-2223 phase (>90%) result in a microstructure with a larger grain size and higher transport critical current density value under magnetic field at given thermomechanical treatment conditions.

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Fabrication and Characterization of BSCCO System High-Temperature Superconductor Using Centrifugal Forming Process (원심성형법을 이용한 BSCCO계 고온초전도체 제조 및 특성 분석)

  • 박용민;장건익
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.189-192
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    • 2000
  • High-temperature superconductor of Bi-2212 system was fabricated by CFP(centrifugal forming process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder:binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shaped microstructure with a well aligned c-axis direction from SEM images. T$_{c}$(Critical temperature) of Bi-2212 was 64K.K.

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The effect of step heat treatment in the critical current density of BSCCO 2223 tapes (BSCCO 2223선재의 임계전류밀도에 영향을 미치는 단계별 열처리의 효과)

  • 박성창;유재무;고재웅;김영국;김철진
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.90-93
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    • 2002
  • The sintering process of BSCCO 2223 tapes is a complex process that is very sensitive to parameters, such as temperature, oxygen partial pressure, heating and cooling rate and holding time. During the first heat treatment, 2212 phase of precursor powder is partially transformed into 2223 phase and some residual secondary phases, such as $(Bi,Pb)_2$$Sr_2$CuO/sub y/(2201), $(Ca,Sr)_2$CuO/sub y/(2/1AEC), (Ca,Sr)/sub 14/Cu/sub 24/O/sub 41/(14/24 AEC) etc. The secondary phases are difficult to be removed from the BSCCO 2223 matrix on the heat treatment. These secondary phases degrade the critical current density. In order to minimize the amount and size of alkaline earth cuprate(AEC) particles step heat treatment is applied during the first heat treatment under the varying atmosphere. Experimental results showed that by adapting the step heat treatment process, the amount and particle size of the secondary phases in the final tapes are decreased. Consequently, the BSCCO 2223grain texture and Jc properties are improved.

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Comparison between BSCCO Thin Films Fabricated by Co-Deposition and Layer-by-Layer Deposition

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.230-234
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    • 2000
  • Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

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