• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.43-43
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• 2011

BN(Boron Nitride)은 온도와 압력 조건에 따라 안정한 상이 sp3 결합인 cubic 구조의 BN(cBN)과 sp2 결합인 hexagonal 구조의 BN(hBN or tBN)으로 나뉘는데, 이 중 cBN은 우수한 기계적, 물리적, 화학적 특성으로 인해 박막 분야에서 매우 높은 응용가능성을 지니고 있다. 하지만 cBN 박막의 합성과정에서의 필수적인 요소인 높은 압축잔류응력은 cBN을 응용분야에 적용하는데 있어 한계점으로 계속 남아 있었다. 그동안 이러한 잔류응력을 감소시키기 위해 열처리, 이온 주입, 제 3의 물질 첨가 등 다양한 관점에서 접근한 연구들이 진행되어 왔다. 본 연구에서는 cBN 합성과정에서 잔류응력을 감소시키기 위한 방법으로 수소를 첨가하였고, 그에 따른 잔류응력의 변화를 분석하고, 그 과정에서 잔류응력의 형성에 수소가 어떤 역할을 하는지 규명하고자 하였다. cBN 박막은 hBN을 target으로한 unbalanced magnetron sputtering를 사용하여, 실리콘 wafer 위에 합성하였다. 증착압력은 1.3mTorr로, 수소의 첨가량을 증가시키며 잔류응력과 cBN fraction을 관찰하였다. cBN fraction은 FTIR로 분석하였고, 잔류응력은 실리콘 strip의 in-situ 곡률측정법으로 계산하였다. cBN 박막의 조성과 구조 분석, 수소의 역할 규명을 위해 RBS 및 HRTEM을 이용하였다.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.150-156
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• 2004

Boron nitride thin films were deposited on Si(100) substrate by RF (Radio-frequency) UBM (Unbalanced Magnetron) sputtering system. The effect of working pressure and substrate bias voltage on microstructure and compressive stress of boron nitride thin films has been investigated. In high working pressure, the alignment of hBN laminates increased with substrate bias voltage, in low working pressure, however, it was high in low substrate bias voltage. Compressive stress evolution and surface morphology of deposited BN films are closely related with the alignment of hBN laminates. The cBN phase without high compressive stress could be nucleated on hBN thin film by controlling the alignment of hBN laminates.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.187-190
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• 1997

The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

• Kyungpook Mathematical Journal
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• v.53 no.2
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• pp.175-184
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• 2013

In this paper, we introduce a BN-algebra, and we prove that a BN-algebra is 0-commutative, and an algebra X is a BN-algebra if and only if it is a 0-commutative BF-algebra. And we introduce a quotient BN-algebra, and we investigate some relations between BN-algebras and several algebras.

• Journal of the Korean Ceramic Society
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• v.51 no.1
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• pp.32-36
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• 2014

The effects of an amphiphilic agent and the orientation of BN on the microwave dielectric properties of BN / polyvinyl butyral (PVB) composites were investigated as a function of the BN content in volume fractions from 0.1 to 0.5 ($V_f$). The plate-shaped BN samples were oriented in the PVB matrix by physical processes, in this case tape casting and laminate methods. With an increase in the BN content, the dielectric constant (K) increased because the K of BN was higher than that of the PVB. At the same BN content, composites with an in-plane orientation of the BN showed a higher dielectric constant than that of composites with a transverse orientation of the BN because the ceramics were oriented parallel to the electric field. All of the composites showed nearly constant K values ranging from 1 to 9.4 GHz, indicating good frequency stability over a wide frequency range. At the same frequency, the K values of the composites increased with an increase in the BN content.

• Bulletin of the Korean Chemical Society
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• v.6 no.2
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• pp.119-120
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• 1985

Stereospecific coordination of racemic 2,3-diaminobutane has been observed in the reaction with platinum(Ⅱ) complexes of optically active 6,6'-dimethyl-2,2'-diaminobiphenyl. The reaction between [Pt (R-dmdabp) Cl$_{2}$] (R-dmdabp is R-6,6'-dimethyl-2,2'-diaminobiphenyl) and unresolved bn (bn is 2,3-diaminobutane) has yielded [Pt(R-dmdabp)-(R-bn)] Cl$_{2}$ only, while the reaction of [Pt(S-dmdabp)Cl$_{2}$] with unresolvd bn has yielded [Pt(S-dmdabp) (S-bn)]Cl$_{2}$ only. On the other hand, the standard [Pt(R-dmdabp) (R-bn)] Cl$_{2}$ complex has been independently prepared from the reaction of [Pt(R-dmdabp)Cl$_{2}$] with R-bn, and the standard [Pt(S-dmdabp) (S-bn)] Cl$_{2}$ from the reaction of [Pt(S-dmdabp)Cl$_{2}$] with S-bn. The stereospecific behavior of the racemic 2,3-diamino-butane is thus confirmed from the comparison of these Pt(Ⅱ) complexes prepared using racemic bn with the standard Pt(Ⅱ) complexes prepared using R-bn or S-bn.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.229-233
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• 2003

By using an oxynitride glass as a sintering additive, the effects of BN content on microstructure and mechanical properties of the hot-pressed and subsequently annealed SiC-BN composites were investigated. The microstructures developed were analyzed by image analysis. The morphology of SiC grains was strongly dependent on BN content in the starting composition. The aspect ratio of SiC decreases with increasing BN content and the average diameter of SiC shows a maximum at 5 wt% BN and decreases with increasing BN content in the starting powder. The fracture toughness increased with increasing BN content while the strength decreased with increasing BN content. The strength and fracture toughness of SiC or SiC-TiC composites were strongly dependent on the morphology of SiC grains, but the strength and fracture toughness of SiC-BN composites were strongly dependent on BN content rather than morphology of SiC grains. These results suggest that fracture toughness of SiC ceramics can be tailored by manipulating BN content in the starting composition. Typical fracture toughness and strength of SiC-10 wt% BN composites were 8 MPa$.$m$\^$1/2/ and 445 MPa, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.874-880
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• 2003

The effect of h-BN content on microstructure, mechanical properties, and machinability of AlN-BN based machinable ceramics were investigated. The relative density of sintered compact decreased with increasing h-BN content. The four-point flexural strength also decreased from 238 MPa of monolith up to 182 MPa by the addition of 30 vol％ h-BN. Both low Young's modulus and residual tensile stress, formed by the thermal expansion coefficient difference between AIN and h-BN, might cause the strength drop in AlN-BN composite. The crack deflection, and pull-out phenomena increased by the plate-like h-BN. However, the fracture toughness decreased with h-BN content. The second phases, consisted of YAG and ${\gamma}$-Al$_2$O$_3$, were formed by the reaction between Al$_2$O$_3$ and Y$_2$O$_3$. During end-milling process, feed and thrust forces measured for AlN-(10～30) vol％ BN composites decreased with increasing h-BN particles, showing excellent machinability. Also, irrespective of h-BN content, relatively good surfaces with roughness less than 0.5 m (Ra) could be achieved within short lapping time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.52-52
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• 2003

cubic boron nitride(cubic BN)는 기계적, 전기적, 광학적, 열적으로 우수한 특성 때문에 다양한 분야에 응용 가능한 재료로, 수 십년 동안 연구되어 오고 있다. 그러나 아직까지 막내 cubic BN이 차지하는 함량과 접착력의 저조 때문에 실제로 응용되기에는 무리가 있다. 많은 이들이 이 문제점들을 해결하기 위해 노력하고 있다. Cubic BN의 생성 매카니즘에 관해서는 여러 모델들이 제시되고 있으나 아직까지 정론화된 것은 없다. 대표적인 모델들로는 스퍼터 모델, 스트레스 모델, 서브플렌테이션 모델 등이 있다. 그러나 BN 막내의 구조가 hexagal BN과 cubic BN이 혼합되어 있는 구조라는 것과 cubic BN이 형성되기 위해서는 이온 충돌 에너지가 필요하다는 점은 모든 모델들에서 일반적으로 취하고 있다. 본 연구에서는, 유도 결합 플라즈마 화학 기상 증착법을 이용해 cubic BN 박막을 증착하였다. 소스 가스로는 BCl$_3$, $N_2$, H$_2$, Ar를 사용하였다. 기판에 가해지는 R.F. 바이어스가 박막내 cubic BN의 함량에 어떠한 영향을 미치는 지에 대해 연구하였다. cubic BN 상의 확인은 FT-IR 장비로 분석하였고, 막내 조성은 AES로, 박막의 두께는 FE-SEM으로 확인하였다.