• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
• /
• pp.118-121
• /
• 2003

A new approach, using MEMS, for improving the performance of high efficiency amplifiers is proposed in this paper. The MEMS tuning element is described as a variable-length shorted CPW stub. Class-E amplifiers can be optimally tuned by these MEMS tuning elements because their operation varies with the impedance of the output tuning circuit. A MEMS tuning element was simulated using full-wave EM simulators to obtain its S-parameters. A Class-E amplifier with the MEMS was designed at 8GHz. The non-linear operation of this amplifier was simulated to explore the effect of the MEMS tuning. Comparing the initially designed amplifier without MEMS, the Power Added Efficiency (PAE) of the amplifier with MEMS is improved from 46.3% to 66.9%. For the amplifier with MEMS, the nonlinear simulation results are PAE = 66.90%, $\eta$(drain efficiency) = 75.89%, and $P_{out}$ = 23.37 dBm at 8 GHz. In this paper, the concept of the MEMS tuning element is successfully applied to the Class E amplifier designed with transmission lines.

• Journal of electromagnetic engineering and science
• /
• 제17권4호
• /
• pp.178-180
• /
• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• 발명하는 사람들
• /
• 46호
• /
• pp.1-16
• /
• 2006

'2006 대한민국 여성 발명품 박람회' 개최/'발명의 달 5월' 행사 풍성히 열려/'제12회 여성발명 우수사례 발표회' 열려/;꽃꽃이 용기' 출원동향 급격히 늘어나/특허청 '소멸특허정보 서비스' 제공한다/김열 특허청 차장 승진 임명/BM 특허 출원, 개인은 줄고 기업은 늘고/5월부터 특허료, 우선심사신청료 인하/현장 스케치/특허청과 한국전력 기술.특허정보 공유 양해각서 체결/독일과 '장미전쟁', 한국 승리/'제34회 제네바 국제발명전'에서 전원 수상 기록/국제 특허 전문가 한 자리에 모였다/특허청, 해외지재권 침해 소송비용 지원/국가연구 개발사업 지원하는 'R&D 특허센터' 출범/'특허 고객 고층 해결 안방 서비스' 개시/한국특허정보원, 다양한 캠페인 통해 사회공헌 활동/특허청, 과학기술 전문인력 50명 특별채용/'특허기술이전 박람회' 개최/취업 위해 일본 기업에 IT특허 기술 유출/부조리 신고자에 포상금 지급/역사 속의 발명품/하루 10분 발명교실/특허Q&A/'주부에서 발명가로, 필요에 의해 발병이 시작됐습니다'/여주초등학교 발명교실/아이디어 착상 및 발명 기법/여성 발명 활동 더욱 장려해야/무리에의 마가린/세계 상표제도 더욱 가까워져/특허청,'아시아 특허정보 허브'로 급부상/'2006 발명 특허 페스티벌' 개최/지리적 명칭, 신문제호 상표등록 안된다/리빙 아이디어/특허기술사업화에 3천89척원 지원/'찾아가는 심사 서비스' 대리인 사무소까지 확대/문화콘텐츠 식별체계 첫 선 보여/한국여성발명협회 회원사 발명품 가이드/

• 한국군사과학기술학회지
• /
• 제27권2호
• /
• pp.238-246
• /
• 2024

Modern military operations rely heavily on broadband communication and data transmission. Recently, the rising use of intelligent unmanned technology necessitates more frequencies. Free-space optical(FSO) communication can offer high-data-rate communications with high security and no need for licensing. Therefore, the FSO communication holds significant interest and potential in the defense industry. In this paper, we present design of a FSO communication terminal taking Korean domestic weather conditions into account. The domestic atmospheric attenuation is analyzed using several models and two-year meteorological information for a city in Korea, and this analysis is utilized to design the FSO communication terminal. The design results were verified using an FSO communication test bed, and we achieved an Ethernet bandwidth of approximately 1.86 Gbps at a distance of 1.3 km with the optical amplifier output power of the test bed set to about 20 dBm.

• 한국재료학회지
• /
• 제13권6호
• /
• pp.389-393
• /
• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• 한국전자파학회논문지
• /
• 제21권9호
• /
• pp.1037-1044
• /
• 2010

본 논문에서는 한 쌍의 동위상 및 역위상 전이 구조로 이루어진 초광대역 위상 역전 전이 구조를 이용하여 소형화된 크기와 광대역 특성을 갖는 새로운 구조의 링 하이브리드를 제안하고, 그 응용의 예로서, 단일 평형 주파수 체배기를 구현한 예를 보여주고 있다. 제안된 링 하이브리드는 기존의 링 하이브리드 대비 65 % 축소된 크기를 가지며, $\sum$ 단자와 $\Delta$ 단자에서 각각 92.5 %와 81.3 %의 대역폭을 갖는다. 또한, 동작 주파수 대역에서 균일한 크기 및 위상의 평형도를 가지므로, 다양한 평형 소자에 응용될 수 있다. 새로운 구조의 링 하이브리드를 이용하여 제작된 주파수 체배기는 회로 시뮬레이션 결과와 유사한 특성을 가지며, 15 dBm의 입력 신호를 인가 할 경우 4~12 GHz 대역에서 평균 10.5 dB 변환 손실과 28 dB 이상의 입력 주파수 신호 억압도를 나타낸다.

• Journal of electromagnetic engineering and science
• /
• 제9권4호
• /
• pp.218-222
• /
• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• Bulletin of the Korean Chemical Society
• /
• 제35권5호
• /
• pp.1485-1490
• /
• 2014

We have designed and developed a new ladder type tetrafused ${\pi}$-conjugated building block such as dihydroindolo[3,2-b]indole (DINI) and investigated its role as an electron rich unit. The photovoltaic properties of a new semiconducting ${\pi}$-conjugated polymer, poly[[5,10-bisoctyl-5,10-dihydroindolo[3,2-b]indole-[5,6- bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole]], represented by PDINI-OBTC8 are described. The new polymer PDINI-OBTC8 was synthesized in donor-acceptor (D-A) fashion, where fused ${\pi}$-conjugated tetracyclic DINI, and 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl) benzo[c][1,2,5]thiadiazole (OBTC8) were employed as electron rich (donor) and electron deficient (acceptor) moieties, respectively. The conventional bulk heterojunction (BHJ) device structure ITO/PEDOT:PSS/PDINI-OBTC8:PCB71M/LiF/Al was utilized to fabricate polymer solar cells (PSCs), which comprises the blend of PDINI-OBTC8 and [6,6]-phenyl-$C_{71}$-butyric acid methyl ester ($PC_{71}BM$) in BHJ network. A BHJ PSC that contain PDINI-OBTC8 delivered power conversion efficiency (PCE) value of 1.68% with 1 vol% of 1,8-diidooctane (DIO) under the illumination of A.M 1.5G 100 $mW/cm^2$.

• 한국전자파학회논문지
• /
• 제19권9호
• /
• pp.1000-1009
• /
• 2008

본 논문의 목적은 $3.1{\sim}4.8$ GHz 대역에서 UWB를 허용하기 위해 국내에서 제시한 DAA 기술 기준을 적용하여 MB-OFDM UWB(Multi-Band Orthogonal Frequency Division Multiplexing Ultra Wide Band) 시스템과 피 간섭신호간의 성능을 평가하는 것이다. DAA 기술 기준에서 정한 피 간섭 신호로는 유럽에서 DAA 적용 시스템으로 검토하고 있는 WiMAX나 국내에 도입될 것으로 예상되는 4G 시스템 등이 있다. MB-OFDM UWB 시스템은 TFC(Time Frequency Code)에 따라 심볼마다 3개 주파수 대역을 호핑하는 TFI(Time frequency Interleaving) 모드와 하나의 주파수 대역을 선택하여 신호를 전송하는 FFI(Fixed Frequency Interleaving) 모드를 지원한다. 본 논문에서는 호핑 모드에 따른 간섭 영향을 정확하게 분석하기 위해 TFC에 따른 평균 송신 출력 및 동기 구조를 반영하여 시뮬레이션을 수행하였다. 분석 결과, 국내 DAA 기술 기준을 적용할 경우, UWB 간섭 신호로부터 Wi-MAX 통신 시스템은 철저히 보호되는 반면, MB-OFDM UWB 시스템은 DAA 검출 레벨의 간섭 신호에 의해 주파수 다양성 효과를 얻을 수 있는 주파수 호핑 모드에서 조차 심각한 성능 저하가 발생하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 학술대회지
• /
• pp.717-722
• /
• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented