• Title/Summary/Keyword: BLT material

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Design and Fabrication of a High Power Piezoelectric Ultrasonic Surgery Unit for Dental Implantation (치과 임플란트 수술용 고출력 초음파 수술기 설계 및 제작)

  • Kim, Na Ri;Jeon, Dae Woo;Kim, Jin Ho;Kim, Sun Woog;Hwang, Jong Hee;Lee, Jeong Bae;Choi, Sung Jae;Im, Dae Jin;Lee, Young Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.10
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    • pp.656-664
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    • 2017
  • This paper presents the design and fabrication of a high power piezoelectric ultrasonic surgery unit for multi-purpose dental implantation. A conventional piezoelectric ultrasonic surgery units consists of a transducer and a tip. However, the drawback of this simple structure is that the output performance of the transducer considerably changes with the change of the tips. An ultrasonic surgery unit that has an additional booster between the transducer and the tip can solve this problem to some extent; for this, an optimal structural design for the transducer is required. We used the Bolted Langevin Transducer (BLT) as the basic transducer; it consists of piezoelectric ceramics and a metal body. It's structure was optimized using mathematical methods to determine the length and radius of the tail and head masses. Additionally, the booster was also subjected to the same methods. Using these mathematical methods, optimal results in terms of the resonance frequency (24.96 kHz), displacement ($14.27{\mu}m$), and pressure (2.8 MPa), could be obtained. The validity of this proposed surgery unit was confirmed experimentally, exhibiting a cutting force of around 7% higher than that of a conventional surgery unit.

Ferroelectric Properly of Bi3.75La0.25Ti3O12 Ceramic Sintered in the Ambient (분위기 소결공정에 의한 Bi3.75La0.25Ti3O12세라믹의 강유전특성)

  • 김응권;박춘배;박기엽;송준태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.783-787
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    • 2002
  • In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..

Multiplication of Displacements of the Langevin Type Piezoelectric Transducer using Various Shapes of Horns

  • Park, Tae-Gone;Kim, Myong-Ho;Park, Min-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.61-65
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    • 2004
  • Bolt-tightened Langevin type vibrators using longitudinal mode of bar were designed and fabricated. In order to amplify the displacement of the tip of the vibrators, stacked ceramics were used and five different shapes of the horns were designed and jointed. Resonant frequencies and vibration characteristics of vibrators and horns were analyzed by ANSYS(finite element analysis computer program), and the displacements of tips of the horns were measured. As results, when the numbers of the stacked ceramics were increased, the displacements of the tips were increased and the driving voltages were decreased. Step l horn (BLT-St1) showed maximum displacement of 36.92 $\mu\textrm{m}$ at 36.7 ㎑ with 45 V$\sub$rms/ and 0.11 A. The displacement amplification ratio was about 5.2. But, the stress of step l horn was concentrated on intersection, where two diameters meet. To lessen the stress, step3 shaped hem is recommended.

Changes of Vibrational characteristics due to the spaces of the Langevin type vibrators (란쥬반형 진동자의 형상에 따른 진동특성 변화)

  • Park, Min-Ho;Jeong, Dong-Seok;Park, Tae-Gone;Kwon, Oh-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.97-102
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    • 2002
  • Bolt-tightened Langevin type vibrators using longitudinal mode of bar were designed and fabricated. In order to amplify the displacement of the tip of the vibrators, stacked ceramics were used and five different shapes of the horns were designed and fabricated. Resonant frequencies and vibrational characteristics of vibrators and horns were analyzed by ANSYS(finite element analysis computer program), and the displacements of tips of the horns were measured. As results, when the number of the stacked ceramics were increased, the displacements of the tips were increased and the driving voltages were decreased. Step1 horn(BLT-Stl) showed maximum displacement of 36.92[${\mu}m$] at 36.7[kHz] with 45[Vrms] and 0.11[A]. The displacement amplification ratio was about 5.2. But, the stress of step1 horn was concentrated on intersection, where two diameters meet. To lessen the stress, step3 shaped horn is recommended.

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Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistor Using an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si Structure

  • Jeon, Ho-Seung;Lee, Gwang-Geun;Kim, Joo-Nam;Park, Byung-Eun;Choi, Yun-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.171-172
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    • 2007
  • We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

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Design and Experimental Results for Cooling Tubes of Ultrasonic Bonding Equipment of Ultrasonic Bonding Equipment (초음파 접합 장치의 냉각관 설계 및 접합강도 실험)

  • Lee, DongWook;Jeon, EuySick
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.4
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    • pp.1879-1884
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    • 2014
  • Recently, the micro bonding technology comes into the spotlight as the miniaturization of the electronic product. The micro bonding technique can classify by way of laser welding and ultrasonic bonding and etc. However, the research on the micro bonding is much lacks. In this paper, carried out the cooling analysis of the 60 [kHz] ultrasonic bonding equipment to know heat effect of the piezoelectric element when the ultrasonic bonding equipment was operated. The ultrasonic horn having the natural frequency with 60 [kHz] for the dissimilar material bonding of the glass and solder tried to be designed. The parameters and response was set through the basic experiment. The dissimilar material bonding strength analysis using the 60 [kHz] ultrasonic bonding equipment was done. We carried out the bonding for improving bonding strength to using the silver paste. air thightness of bonding surface was confirmed by analysis of bonding interfaces.