• Microbiology and Biotechnology Letters
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• v.20 no.6
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• pp.699-703
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• 1992

An oriental drug, named NP-S, traditionally used as a therapeutic agent for hepatitis B was characterized by separating into volatile and non-volatile fractions. The volatile fraction contained ammonia as determined by ammonia kit and eight peaks when it was analyzed by gas chromatography that are not identified yet. The elemental analysis showed that the non-volatile fraction contained 15.5% carbon, 4.8% hydrogen, 11% nitrogen, and 10% sulfur along with a few trace elements such as Cl, Si, Mg and Zn. NP-S contained 6.7% peptide, 0.3% free amino acids such as Lys, Pro, Arg, lie, Tyr, Phe, His, Thr and Ser and 0.1% inorganic phosphate. The drug showed antimicrobial activity against Salmonella typhimurium, StaPhylococcus aureus and Candida albieans and also had antioxidant activity when thiobarbituric acid reacting substances(TBARS) method was applied.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.27-34
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• 1981

The phase separation of low-alkali borosilicate glass with the composition of $6.25Na_2O$.$18.75B_2O_3$.$75.00SiO_2$(mole%) substituting $Li_2O$ for $Na_2O$ was studied. The phase separation in the temperature range of transformation was examined with various heating temperatures and soaking times. Durability to water, thermal expansion and specific density of the specimen were investigated and the microstructure of the separated phase was also observed by transmission electron micrograph techniques. The maximum alkali extraction result with the best phase separation effect was obtained when $Na_2O$ of the base glass was replaced with $1.88Li_2O$ (mole %) and electron micrograph of carbon film replica of $1.88Li_2O$$4.37Na_2O$.$18.75B_2O_3$.$75.00SiO_2$ (mole %) glass showed that the glass consisted of homogeneous two phases. The minimum specific density was shown with the specimen treated at 57$0^{\circ}C$ and it was also shown that the longer the treating time the lower the specific density. The apparent activation energies of approximately 45 kcal/mole by the alkali extraction and 43kcal/mole by the thermal expansion method were derived from the Arrhenius plots, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.763-767
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• 2006

Directionally solidified Si films obtained via line-scan SLS can lead to attainment of high-mobility TFTs. The crystallographic texture of the resultant materials can potentially be an important factor because the spatial details thereof may impact the overall device uniformity. Here, we present EBSD analysis of these materials that reveal the existence of relatively large domains with different textures and differing amounts of defects, which in turn, may adversely affect device uniformity.

• Journal of Magnetics
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• v.10 no.4
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.153-153
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• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.52-52
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• 2005

• Journal of Surface Science and Engineering
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• v.31 no.5
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• pp.245-250
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• 1998

There is clear pressing need to reduce bias field(Ha,) used on linear magenetomechanical resonator tag by at least a factor of two to allow low-bias operation near the frequency minimum since reducing Ha causes a dramatic increase in well depth, which implies increased stability. However, this makes it more difficult to maintain tight frequncy specs. It can be solved by a reduction of magnetomechanical coupling(k). We determined from an equivalent circuit model that optimal reduced, k, is near 0.3 Also, We determiend the material properties($lambda_s$, :saturated magenetostriction, $M_s$, and,$H_a$) that give k=0.3. From these evaluations, we suggested that on optimal comosition with adequate mathrial properties is $Fe_{55}Co_{15}Cr_6Nb_2B_{18}Si_4$.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.1
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• pp.1-9
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• 1997

The variation of the mechanical properties and the formation of retained austenite with heat treatment conditions in austempered Si bearing carbon steels has been investigated. In the case of a steel containing 0.35C-1.48Si-0.95Mn, it has been found that a feather shape bainite structure of lath are obtained under a isothermal treated condition at just below the Ms temperature, and the martensite, bainitic ferrite and retained austenite of second phase particles on the ferrite matrix for a isothermal treated steels after intercritical annealing are precipitated in a linked shape. The retained austenite with $2{\mu}m$ size induced as TRIP is found to increase with increasing the formation rate of retained austenite for the intercritical annealing and high Si containing steels. The tensile strength is increased as austempering temperature increases in all isothermal treatment temperature, whereas the elongation is shown to roughly decrease as the tensile strength increases. The values of tensile strength-elongation balance have showed a marked dependence upon the elongation rather than the tensile stregth, and their values are increased for high Si containing steels and intercritical annealing condition. The most optimum result has been shown to be the tensile stregth-elongation balance of $2882.4kgf/mm^2.%$ and the elongation of 33.3% for a "B" steel in the heat treating temperature range of $780{\sim}370^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.