• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.208-209
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• 2002

Recently an asymmetric giant magnetoimpedance (GMI) profile has been observed in Co-based amorphous ribbons annealed at the weak field [1-4]. This phenomenon has attracted a large interest due to its practical application to sensitive magnetic sensors. It is known [5.6] that in magnetic materials, the magnetoimpedance is caused by the effect of the magnetic field on the transverse magnetic permeability of a near-surface layer. In consequence of it, the value of the magnetoimpedance depends strongly on near-surface magnetic properties of the sample. (omitted)

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4161-4164
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• 2012

Density functional MO calculations for the methylsilole anion of $[C_4H_4SiMe]^-$ and methylgermole anion of $[C_4H_4SiMe]^-$ at the B3LYP (full)/6-311+$G^*$ level (GAUSSIAN 94) were carried out and characterized by frequency analysis. The ground state structure for the methylsilole anion and methylgermole anion is that the methyl group is pyramidalized with highly localized structure. The difference between the calculated $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are 9.4 and 11.5 pm, respectively. The E-Me vector forms an angle of $67.9^{\circ}$ and $78.2^{\circ}$ with the $C_4E$ plane, respectively. The optimized structures of the saddle point state for the methylsilole anion and methylgermole anion have been also found as a planar with highly delocalized structure. The optimized $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are nearly equal for both cases. The methyl group is located in the plane of $C_4E$ ring and the angle between the E-Me vector and the $C_4E$ plane for the methylsilole anion and methylgermole anion is $2.0^{\circ}$ and $2.3^{\circ}$, respectively. The energy difference between the ground state structure and the transition state structure is only 5.1 kcal $mol^{-1}$ for the methylsilole anion. However, the energy difference of the methylgermole anion is 14.9 kcal $mol^{-1}$, which is much higher than that for the corresponding methylsilole monoanion by 9.8 kcal $mol^{-1}$. Based on MO calculations, we suggest that the head-to-tail dimer compound, 4, result from [2+2] cycloaddition of silicon-carbon double bond character in the highly delocalized transition state of 1. However, the inversion barrier for the methylgermole anion is too high to dimerize.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.203-209
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• 1999

LaAlO3d single phase used as the butter layer on Si wafer for YBa2Cu3O7-$\delta$ superconductor application were prepared by solid state reaction method and by self-sustaining combustion process. The microstructure and crystallity of synthesiszed LaAlO3 powder studied using scanning electron microscope (SEM) and X-ray diffractometer(XRD), specific surface area and sintering characteristics fo powder were investigated by Brunauer-Emmett-Teller (BET) method and dilatometer respectively. In solid state reaction method, it is difficult to obtain LaAlO3 single phase up to 150$0^{\circ}C$ period. However, in self-sustaining combustion process, it is to easy to do it only $650^{\circ}C$. Based on the results of analysis of dilatometer it is easier to obtain high sintering density (98.87%) in self-sustaining combustion process than in the solid state reaction method. This reason is that the average particle size prepared by self-sustaining combustion process is nano crystal size and has high specific surface are value(56.54 $m^2$/g) compared with that by solid state reaction method. Also, LaAlO3 layer on the Si wafer has been achieved by screen printing and sintering method. Even though the sintering temperature is 130$0^{\circ}C$, the phenomena of silicon out diffusion in LaAlO3/Si interphase are not observed.

• Journal of Magnetics
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• v.11 no.1
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• pp.36-42
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• 2006

In this report, we demonstrate a comprehensive analysis of the effects of Au addition on the microstructure and magnetic properties of $Fe_{73.5}Si_{13.5}B_{9}Nb_{3}Au_1$ Finemet-type alloy. It was found that the as-quenched alloys were the amorphous state and turned into nanocrystalline state under heat treatments. The DSC analysis indicates that the sharply exothermal peak corresponding to the crystallization of the $\alpha-Fe(Si)$ was observed at $547-579^{\circ}C$ depending on the heating rates, which is little higher than that of original Finemet (542-$570{^{\circ}C}$, respectively). Besides, the thermomagnetic result confirmed that the full substitution of Cu by Au with the single phase structure in the M(T) curve along cooling cycle. Ultrasoft magnetic properties of the nanocrystallized samples were significantly enhanced by the proper annealing such as the increase of permeability and the decrease of the coercivity. The optimum annealing condition was found at the annealing temperature of $540^{\circ}C$ and the increase of the annealing time up to 90 min.

• 연구논문집
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• s.29
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• pp.141-149
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• 1999

Brazing of Fe-Cr-Al alloy was carried out at $1200^{\circ}C$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si-Fe base alloy} and MBF-50 foil (Ni-Cr-Si-B). The effect of boron content on the stability of oxide scale on the brazed joint was investigated by means of cyclic oxidation test performed at $1050^{\circ}C$ and $1200^{\circ}C$. Apparently, the joints brazed with MBF-50 containing boron showed relatively stable oxidation rates compared to boron-free BNi-5 at both temperatures. However, it was considered that the slower weight loss of MBF-50 brazed specimen wasn’t resulted from the low oxidation rate but from the spallation of oxide layer. The oxide layer consisted of thick spinel oxide on the surface and $Al_2 O_3$ internal oxide layer along the interface between mother alloy and braze, the mother alloy was also eroded seriously by the formation of spinel oxides such as $FeCr_2 O_4$ and $NiCr_2 O_4$ on the surface, likely to be induced by the change of oxide forming mechanism due to diffusion of boron from the braze. On the contrary, the joint brazed with BNi-5 showed the good oxidation resistance during the cyclic oxidation test. It seems that the oxidation can be retarded by the formation of stable $Al_2 O_3$ layer at the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Journal of Korea Foundry Society
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• v.26 no.4
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• pp.174-179
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• 2006

This study aims to investigate the microstructures and mechanical properties of DCI manufactured by sand and metal mold casting. To prohibit the formation of the chill, carbon, silicon and rare earth($0{\sim}0.2\;wt%$) were controlled and temperature of metal mold was constantly kept at $160^{\circ}C$. The sizes, counts and nodularity ratios of nodules were analyzed by image analysis device. Wear test using pin-on-disc wear tester was carried out under the conditions of load 47.2N, velocity 0.4 m/s and distance 2000 m. Tensile test using Instron type testing machine was performed with velocity of 0.1 mm/min according to the KS B 0802. The formation of the chill was not observed when percentage of the carbon and silicon were 3.8 and 2.5. Mechanical properties of GCD manufactured by metal mold were better than sand casting.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.