• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.396-399
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• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.467-469
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• 2009

In this study, fatigue samples were prepared from cylinder head parts that are actually used in domestic (A) and foreign (B) automobiles; high-temperature, high-cycle, and low-cycle fatigue characteristics were then evaluated and compared. A study on the correlation between the microstructural factor and high temperature fatigue characteristic was attempted. The chemical compositions of the heat resistant aluminum alloys above represented A356 (A) and A319 (B), respectively. The result of the tensile strength test on material B at $250^{\circ}C$ was higher by 30.8MPa compared to material A. On the other hand, elongation was 8.5% higher for material A. At $130{\circ}C$, material B exhibited high fatigue life given high cycle fatigue under high stress, whereas material A showed high fatigue life when stress was lowered. With regard to the low-cycle fatigue result ($250^{\circ}C$) showing higher fatigue life as ductility is increased, material A demonstrated higher fatigue life. Through the observation of the differences in microstructure and the fatigue fracture surface, an attempt to explain the high-temperature fatigue deformation behavior of the materials was made.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.324-331
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• 1995

0.36[wt%l $SiO_{2}$ and 0.1[wt%] $H_{3}$B $O_{3}$ were added to strontium ferrite magnets of the magnetoplumbite phase SrO.5.7F $e_{2}$ $O_{3}$ to hinder grain growth and accelerate sintering, respectively. This experiment was carried out to investigate effect of particle size distribution as a function of milling time(20, 30, 40, 50, 60, 70 hours) on the magnetic properties of SrO.5.7F $e_{2}$ $O_{3}$ ferrite magnet. The B-H curve, density and the degree of orientation were measured. And the microstructure of ferrite magnets was examined with a SEM. The optimal conditions and properties of the typical sample are the following : The milling time was 60 hours. Magnetic and physical properties are $B_{r}$=4, 000[G], $_{b}$ $H_{c}$=3, 330[Oe], (BH)max=3.786[MGOe], $_{I}$ $H_{c}$=3, 525[Oe], density=5.0063[g/c $m^{3}$] and orientation factor f=0.813.0.813.3.3.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.786-790
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• 2005

We investigated the particularity of temperature and composition changes in $xNa_2O{\cdot}(52.5-x)B_2O_3{\cdot}47.5SiO_2$ glasses by use of FT-IR, $^{11}B$ NMR, Raman spectrometer. From FT-IR and $^{11}B$ NMR spectrometer, we thought that tetrahedral boron, $BO_4$ units are created $N_4$ increasing tendency generated near $600^{\circ}C$. It's expected that composition ana heat treatment directly contributed to structural changes, this changes are following to $Na_2O$ increasing or decreasing. caused by $N_4\;and\;BO_4$ units are caused by relatively increasing or decreasing in the glasses' structure. Particularly, $BO_4$ units are converted to $BO_3$ units after $600^{\circ}C$ heat treatment for 50h in the composition of $x<18(R<0.5,\;R=Na_2O/B_2O_3\;mol\%)$. On the order hand, $BO_3$ units are converted to, $BO_4$ units after $600^{\circ}C$ heat treatment for 50h in the composition of $x{\geq}18\;(R>0.5)$. This particularity of composition and temperature dependence of structural changes are similarly represented by Raman analysis results.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.942-948
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• 2003

This paper about the small electron beam irradiator for solar cell's efficiency. Many things are studied by method to increase conversion efficiency of solar cell. We selected electron beam by method for conversion efficiency of solar cell. Energy bands of this electron beam irradiator is 80keV(max.). And, solar cells that apply in this paper are crystal Si. Average efficiency of solar cell that applies in this experiment is 10$\%$. This system manufactured low energy electron beam irradiator. And, electron beam irradiation to solar cell in vacuum chamber of this irradiator. Irradiation area is 20*20 [mm2] by 40[keV].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.97-98
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• 2008

n-ZnO/p-Si heterostructure is a good candidate for ZnO-based heterojunction light emitting diodes(LED) because of its competitive price and lower driving voltage. However, the conventional LED shows much lower extraction efficiency, because it has small top contact and large backside contact. In this structure, the injected current from the top contact enters the active region underneath the top contact. Thus, the emitted light is hindered by the opaque top contact. This problem can be solved by using a current-blocking layer(CBL) that prevents the current injection into the active region below the top contact.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3644-3649
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• 2011

Multinuclear solid-state nuclear magnetic resonance (NMR) experiments were performed to investigate the local structure changes of nanoporous silica during hydrothermal treatment and surface modification with 3-aminopropyltriethoxysilane (3-APTES). The nanoporous silica was prepared by sol-gel polymerization using inexpensive sodium silicate as a silica precursor. Using $^1H$ magic angle spinning (MAS) NMR spectra, the hydroxyl groups, which play an important role in surface reactions, were probed. Various silicon sites such as $Q^2$, $Q^3$, $Q^4$, $T^2$, and $T^3$ were identified with $^{29}Si$ cross polarization (CP) MAS NMR spectra and quantified with $^{29}Si$ MAS NMR spectra. The results indicated that about 25% of the silica surface was modified. $^1H$ and $^{29}Si$ NMR data proved that the hydrothermal treatment induced dehydration and dehyroxylation. The $^{13}C$ CP MAS and $^1H$ MAS NMR spectra of 3-APTES attached on the surface of nanoporous silica revealed that the amines of the 3-aminopropyl groups were in the chemical state of ${NH_3}^+$ rather than $NH_2$.