• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1104-1105
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• 2006

Several boride sintered bodies such as $TiB_2$, $ZrB_2$, and $SiB_6$ were previously reported. In the present study, the sinterability and physical properties of chromium boride $(CrB_2)$ containing chromium carbide $(Cr_3C_2)$ sintered bodies were investigated in order to determine its new advanced material. The samples were sintered at desired temperature for 1 hour in vacuum under a pressure by hot pressing. The relative density of sintered bodies was measured by Archimedes' method. The relative densities of $CrB_2$ addition of 0, 5, 10, 15 and 20 mass% $Cr_3C_2$ composites were 92 to 95%. The Vickers hardness of the $CrB_2$ with 10 and 15 mass% $Cr_3C_2$ composites were about 14 and 15 GPa at room temperature, respectively. The Vickers hardness at high temperature of the $CrB_2$ addition of 10 mass% $Cr_3C_2$ composite decreased with increasing measurement temperature. The Vickers hardness at 1273 K of the sample was 6 GPa. The Vickers hardness of $CrB_2$ addition of $Cr_3C_2$ composites was higher than monolithic $CrB_2$ sintered body. The powder X-ray diffraction analysis detected CrB and $B_4C$ phases in $CrB_2$ containing $Cr_3C_2$ composites.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.5
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• pp.260-266
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• 2003

In order to study the interfacial reaction between Nb thin sheet and Fe-C-(Si) alloy with different Chemical compositions, they were cast-bonded. The growth of carbide layer formed at the interface after isothermal heat treatment at 1173K, 1223K, 1273K and 1323K for various times was investigated. The carbide formed at the interface was NbC and the thickness of NbC layer was increased linearly in proportional to the heat treating time. Therefore, It was found that the growth of NbC layer was controlled by the interfacial reaction. The growth rate constant of NbC layer was slightly increased with increase of carbon content when the silicon content is similar in the cast irons. However, as silicon content increases with no great difference in carbon content, the growth of NbC layer was greatly retarded. The calculated activation energy for the growth of NbC layer was varied in the range of 447.4~549.3 kJ/moI with the compositions of cast irons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.385-393
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• 1995

Akali-resistant porous glass was prepared by phase separation in Na2O-B2O3-SiO2 system containing ZrO2 and MgO. ZrO2 was added for alkali-resistance and MgO for anti-cracking during leaching. Optimal content of ZrO2 for alkali-resistance was 7wt% and devitrification by heat treatment resulted from further addition. Pore size and pore volume were decreased and specific surface area was increased with ZrO2 addition due to depression in phase separation. Addition of 3mol% MgO to mother glass containing 7wt% ZrO2 was effective for anti-crack during leaching. In this case, with phase separation at 55$0^{\circ}C$ and 5$25^{\circ}C$ for 20 hrs. crack-free porous glasses could be prepared. The relation between pore size r and heat treatment time t at 55$0^{\circ}C$ was D=25.58＋18.16t. According to measurement of gas permeability, the mechanism of gas permeation was Knudsen flow. N2 and He permeability of porous glass which was prepared by heat treatment at 55$0^{\circ}C$ for 20 hrs. were 0.843$\times$10-7mol/$m^2$.s.Pa and 2.161$\times$10-7mol/$m^2$.s.Pa respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1396-1398
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• 2001

The $HoSi_2$ compounds prepared by codeposition of Si and Ho, and $HoSi_2$ by sintering method were investigated electrical and Hall effect. The crystal structure of samples showed a orthorhombic structure, and lattices constant is a=9.8545 $\AA$, b=7.7935 $\AA$, c=7.8071 $\AA$. Hall effect shows a n-type conductivity in the sintered $HoSi_2$. The electrical resistivity values was 1.608${\Omega}cm^{-1}$ and carrier mobility was $6.9{\times}10^1cm^2/V{\cdot}sec$ at low room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.888-892
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• 2004

It is necessary to develop soft magnetic layer with high saturation magnetization 4 $\pi{M}_s$ and in-plane magnetic anisotropy field Hk for soft magnetic underlayer of perpendicular magnetic recording media with high signal to noise ratio. Fe-Co-B layer with high 4 $\pi$Ms of about 23 kG deposited on Ni-Fe and Ni-Fe/Si seedlayer exhibited very high in-plane magnetic anisotropy filed Hk of about 280 and 380 Oe, respectively, In-plane XRD studies clarified that the lattice spacing of planes along the easy axis direction was longer than that along the hard axis direction in the Fe-Co-B layers with high Hk. These results indicate that high Hk of Fe-Co-B/Ni-Fe and Fe-Co-B/［Ni-Fe/si］ layers were resulted from magnetoelastic anisotropy owing to a residual stress. Moreover, the high Hk in the Fe-Co-B/Ni-Fe layer was maintained until 30$0^{\circ}C$ annealing temperature.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.19-25
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• 2002

Glass composed of $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$ for the fabrication of green sheet was prepared by melting process, and glass ceramics was prepared by the process of nucleation and grystal growth for the glass of $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$ system with Lithium fluorhectorite and Lithium boron fluorphlogopite crystal phase. Powderization of the glass ceramics was carried out by water swelling. The average particle size at this point was 2.574 $\mu\textrm{m}$. Slurry was prepared for green sheet using high viscous sol fabricated by water swelling, which shows cleavage phenomenon in prepared glass ceramics. The optimum ratio of powder to water for the tape casting was 18:100, and its viscosity was 11,000~14,000 cps.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Transactions of Materials Processing
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• v.15 no.6 s.87
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• pp.421-427
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• 2006

Drawing process of Al-1%Si bonding wire considering fine Si particle is analyzed in this study using FE-simulation. Al-1%Si boding wire requires electric conductivity because Al-1%Si bonding wire is used for interconnection in semiconductor device. About 1% of Si is added to Al wire for dispersion-strengthening. Distribution and shape of fine Si particle have strongly influence on the wire drawing process. In this study, therefore, the finite-element model based on the observation of wire by continuous casting is used to analyze the effect of various parameters, such as the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle on wire drawing processes. The effect of each parameter on the wire drawing process is investigated from the aspect of ductility and defects of wire. From the results of the analysis, it is possible to obtain the important basic data which can be guaranteed in the fracture prevention of Al-1 %Si wire.