Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Electrical properties of sintered $HoSi_2$

$HoSi_2$ 소결체의 전기적 특성 연구

  • Lee, Woo-Sun (Department of Electrical Engineering Chosun University) ;
  • Oh, Guem-Kon (Department of Electrical Engineering Chosun University) ;
  • Kim, Hyung-Gon (Department of Electricity, Chosun college of Science & Technology)
  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 오금곤 (조선대학교 공과대학 전기공학과) ;
  • 김형곤 (조선이공대학 전기과)
  • Published : 2001.07.18
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Abstract

The $HoSi_2$ compounds prepared by codeposition of Si and Ho, and $HoSi_2$ by sintering method were investigated electrical and Hall effect. The crystal structure of samples showed a orthorhombic structure, and lattices constant is a=9.8545 $\AA$, b=7.7935 $\AA$, c=7.8071 $\AA$. Hall effect shows a n-type conductivity in the sintered $HoSi_2$. The electrical resistivity values was 1.608${\Omega}cm^{-1}$ and carrier mobility was $6.9{\times}10^1cm^2/V{\cdot}sec$ at low room temperature.

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