• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.112.1-112
• /
• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.781-785
• /
• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.134-134
• /
• 2016

CMC(Ceramic Matrix Composites)는 $1500^{\circ}C$ 이상의 고온에서 내열성, 내산화성, 내식성이 우수하여, 초음속 비행체, 가스터빈 엔진 및 원자로용 초고온 부품 등에 수요가 증가하고 있다. 하지만 이러한 특성은 비산소 환경에 국한되는 것으로 약 $400^{\circ}C$ 이상의 산화 분위기에는 탄소섬유가 산화되는 문제로 인하여 적용의 한계를 가지고 있다. 따라서 CMC의 적용범위 확대를 위하여 내산화 코팅으로 CMC의 초고온 산화특성을 개선하는 것이 필수적이며, 장시간 초고온 산화환경 분위기에서 사용되기 위하여 안정적인 코팅기술이 최근 기술개발의 핵심현안으로 부각되고 있다. 본 연구에서는 pack cementation 공정을 이용하여 내산화성이 우수한 SiC 코팅층을 제조하였다. Pack cementation 공정에 사용된 코팅 분말은 57wt.% SiC, 30wt.% Si, 3wt.% B, 10wt.% Al2O3의 비율로 혼합된 것이다. 실험은 3D 직조된 CMC 모재를 혼합분말 내에 침적한 후, Ar 분위기에서 $1600^{\circ}C$, 4~12시간 반응시켜 수 마이크론 두께의 SiC 코팅층을 형성하였다. 더 우수한 산화 특성을 부여하기 위하여 pack 처리된 CMC 표면에 초고온 세라믹인 TaC 소재를 진공플라즈마 코팅 공정으로 적층시켰다. 제조된 코팅층을 SEM, XRD를 이용하여 미세구조 및 결정구조를 분석하였으며, pack cementation에 따른 내산화 특성을 비교 분석하고자 $2000^{\circ}C$에서 산화 실험을 진행하였다. 산화 실험 이후 미세구조 및 결정구조 분석으로 산화거동을 규명하고자 하였다.

• Journal of Korean Ophthalmic Optics Society
• /
• v.5 no.1
• /
• pp.7-11
• /
• 2000

The anti-reflective anti-static (ARAS) optical film is designed using absorbent materials such as ITO, $TiN_xW_y$, Ag by Essential Macleod program. [air ${\mid}TiN_xW_y{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The reflectivity, transmittance of this coating are below 0.5%, about 75%, respectively. [air $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$, ITO glass] layer can adjust reflectance of below 0.5% with above 97% transmittance. In the [air ${\mid}SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$ Ag glass] layer, the transmission can be controlled at above 96% with reflectance of 1~2%.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.11a
• /
• pp.69-72
• /
• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_3$ $O_{12}$(BLT) 강유전체 박막을 $Al_2$ $O_3$/Si 기판위에 졸-겔(sol-gel)법으로 스핀 코팅하여 Metal-Ferroelectric-Insulator-Silicon (MFIS) 구조를 형성하였다. 박막의 결정화를 위해 as-coated 박막을 산소분위기에서 $650^{\circ}C$ 및 $700^{\circ}C$에서 30분 동안 후속열처리를 실시하였다. BLT 박막의 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 c축으로 우선 배향되는 경향을 보였으며, FWHM 값이 감소하여 결정성이 향상됨을 확인할 수 있었다. $700^{\circ}C$에서 열처리된 BLT 박막의 memory window는 약 2.5V (인가전압 5V)를 나타내었으며, 누설전류는 약 1.5x$10^{-7}$ A/$\textrm{cm}^2$를 나타내었다.다.다.

• Journal of Sensor Science and Technology
• /
• v.5 no.2
• /
• pp.61-67
• /
• 1996

The growth and characterization of heteroepitaxial $Si_{1-x}Ge_{x}$ films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of $Si_{1-x}Ge_{x}$ heteroepitaxial layers, $SiH_{4}$ / $GeH_{4}$ / $H_{2}$ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in $Si_{1-x}Ge_{x}$ / Si heteroepitaxial film of about $400\;{\AA}$ thickness was not observed at the growth temperature of as low as $650^{\circ}C$, and the composition ratios of Si / Ge changed linearly with $SiH_{4}$ / $GeH_{4}$ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds ${\AA}$/decade.

• Journal of the korean society of oceanography
• /
• v.32 no.2
• /
• pp.69-74
• /
• 1997

Depth profiles of organic carbon (C), biogenic silica (Si), and inorganic phosphorus (P) in Maxwell bay sediments were determined to investigate paleoclimatic changes during Holocene. Organic C and biogenic Si contents generally show a down-core decrease trend, which appears to be mostly controlled by their vertical fluxes through productivity in the surface waters, but it is uncertain that inorganic P contents are directly influenced by productivity changes with time. Before 4000 yr B.p. marine productivity seemed to be almost zero because ice permanently covered the surface waters of the study area. As the climate started to become relatively warm at 4000 yr B.p., ice was sporadically melted in the surface waters and thereby marine productivity gradually increased until 1500 yr B.p. For the last 1500 year, marine productivity must be high enough to overcome the dilution by high terrigenous sedimentation, thus that period was the warmest during the last 6000 year.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.198-199
• /
• 2002

연자성 재료는 투자율이 높고, 큰 포화자속 밀도를 갖는 재료로서 외부자계에 용이하게 자화되며, 그 용도를 살펴보면 전기에너지 변환, 자기기록. 변압기, 변성기, 각종 코아, 모터, 자기센서, 전ㆍ자계차폐재등 많은 전자기기에 이용되고 있다. 따라서 연자성재료는 기본적으로 결정자기이방성과 자왜가 작아야 한다. 한편 전기, 전자기의 경량화 및 고효율화를 위하여서는 포화자속밀도의 극대화, 고주파영역에서의 우수한 연자기 특성 및 저에너지 손실을 갖는 재료개발이 요구된다. (중략)

• Journal of Ceramic Processing Research
• /
• v.21 no.3
• /
• pp.351-357
• /
• 2020

To prevent the oxidation of ultra-high-temperature ceramic zirconium diboride (ZrB2) at high temperatures, this study fabricated sintered composites containing silicon carbide and tungsten carbide, and examined the properties related to hightemperature oxidation. Spark plasma sintering was employed for rapid sintering, and a high-temperature torch test was conducted on samples to determine their surface oxidation behaviour. The composites oxidised at high temperature showed different surface oxidation behaviour according to the type of carbide-based additive. Composites containing both carbides, which have different oxidation mechanisms, exhibited better resistance to oxidation than those containing a single carbide.

• Proceedings of the IEEK Conference
• /
• 2004.06a
• /
• pp.213-216
• /
• 2004

This paper describes design and implementation of the 5.5 GHz VCO with parallel-branch inductors using 0.8${\mu}m$ SiGe HBT process technology. The proposed parallel-branch inductor shows $12 \%$ improvement in quality factor in comparison with the conventional inductor. A phase noise of -93 dBc/Hz is measured at 100 kHz offset frequency, and the harmonics in the VCO are suppressed less than -23 dBc. The single-sided output power of the VCO is -6.5$\pm$1.5 dBm. The manufactured VCO consumes 15.0 mA with 2.5 V supply voltage. Its chip areas are 1.8mm ${\times}$ 1.2mm.