• The Korean Journal of Ceramics
• /
• v.5 no.2
• /
• pp.189-194
• /
• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Journal of the Korean Ceramic Society
• /
• v.35 no.4
• /
• pp.364-370
• /
• 1998

Boron-phoshor-silicate glass was fabricated on Si substrates by FHD(Flame Hydrolysis Deposition) The microstructrue of silica soot deposited at various conditon such as composition and substrate temperature was analysed by SEM. After consolidation the refractive index and composition of the silica layer were in-vestigated. For refractive index control B, P and Ge were used as additive elements while B and Ge oxides are easily mixed into $SiO_2$, P oxide($B_2O_3$) doping is difficult because of the volatile property due to low melt-ing point. Boron-phosphorous-silicate glass (BPSG) layer were fabricated using bertical torch and optimized flame temperature substrate temperature and distance of torch and substrate. P concentration of BPSG lay-er measured 3.3 Wt% and the consolidation temperature was lower than $1180^{\circ}C$. The measured refractive index of BPSG silica layer in $1.55\;\mu\textrm{m}$ wavelength was $1.4480{\pm}1{\times}10^{-1}$ and the thickness was $22{\pm}1\;\mu\textrm{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.235-235
• /
• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.1
• /
• pp.8-11
• /
• 2002

Ni, Si and $SiO_2$ films were implanted by 350 keV B $i_{+}$ ions at room temperature with fluences of 1$\times$10$^{16}$ and 2$\times$10$^{16}$ ions/c $m^2$ The depth distributions of implanted B $i^{+}$ ions in Ni, Si and $SiO_2$ films were by investigated by Rutherford backscattering. The results show that the depth distributions of implanted B $i^{+}$ ions into Ni, Si and $SiO_2$ films have obeyed nearly Gaussian distributions. The maximum difference between experimental and calculated values is less than 18 % for mean projected range. Experimental range straggling deviated significantly from calculated value. The possible reasons are discussed.sed.d.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.518-523
• /
• 1998

The fracture toughness and hardness of 62 %$SiO_2-19%ZrO_2-9%Na_2O-10%B_2O_3$(wt%) glass ceramics system were investigated. As a result of DTA study to find crystallization temperature, an exothermic peak near $820^{\circ}C$ was observed. The optimum nucleation temperature and the optimum crystal growth temperature were determined by XRD and SEM analysis, and were approximately $650^{\circ}C$, $840^{\circ}C$ respectively. The fracture toughness of this zirconia glass ceramics was determined by Vickers Indentation Method. The hardness value was not changed with increasing of the heat treatment temperature, but fracture toughness value was increased up to $1.8 MPa{\cdot}m^{1/2}$ at $840^{\circ}C$, with increasing of heat treatment temperature.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.5
• /
• pp.986-991
• /
• 2016

In this study, we prepared ITO thin films on $Nb_2O_5/SiO_2$ double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ $400^{\circ}C$). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at $400^{\circ}C$ showed the most excellent value of resistivity and sheet resistance as $3.03{\times}10^{-4}{\Omega}{\cdot}cm$, $86.6{\Omega}/sq.$, respectively. In results of optical properties, average transmittance was increased but chromaticity ($b^*$) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity ($b^*$) of ITO thin film deposited at $400^{\circ}C$ exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced $Nb_2O_5/SiO_2$ double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.

• Journal of the Korean Magnetics Society
• /
• v.17 no.3
• /
• pp.120-123
• /
• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Journal of Power System Engineering
• /
• v.6 no.1
• /
• pp.88-95
• /
• 2002

본 연구에서는 균열 치유 거동을 가지는 소결된 Mullite/SiC의 모재, 열처리재, 균열재, 치유 균열재의 기계적 특성이 논의되었다. 반타원형 균열의 치수는 $100{\mu}m$ 과 $200{\mu}m$이다. 얻어진 결과는 다음과 같다. (a) Mullite/SiC 복합 세라믹스는 균열 치유 능력이 있었다. (b) 최적의 균열 치유 열처리 조건은 $1300^{\circ}C$, 1시간이었다. (c) 치유 가능한 최대 균열 길이는 직경 $100{\mu}m$의 반타원 균열이다. (d) 균열 치유부는 $1200^{\circ}C$이상에서 충분한 강도를 가졌고, 대부분의 시험편은 균열 치유부 이외의 영역에서 파단 하였다. (e) 공기중에서 예열처리는 본 재료의 피로강도 향상에 유용하였다.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.229-232
• /
• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.581-596
• /
• 2016

A comprehensive review on sliding and solid particle erosion wear characteristics of silicon carbide (SiC) ceramics and SiC composites is provided. Sliding or erosion wear behavior of ceramics is dependent on various material characteristics as well as test parameters. Effects of microstructural and mechanical properties of SiC ceramics are particularly focused to understand tribological performance of SiC ceramics. Results obtained between varieties of pairs of SiC ceramics indicate complexity in understanding dominant mechanisms of material removal. Wear mechanisms during sliding are mainly divided in two groups as mechanical and tribochemical. In solid particle erosion conditions, wear mechanisms of SiC ceramics are explained by elastic-plastic deformation controlled micro-fracture on the surface followed by radial-lateral crack propagation beneath the plastic zone.