• Economic and Environmental Geology
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• v.43 no.3
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• pp.269-278
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• 2010

We investigated characteristics of the coloring material of Dancheong pigments and hope that this study contributes the revival of traditional Dancheong pigments color. For this purpose, we collected Dancheong fragment samples that fell off naturally from old wooden buildings in Gwangju and Jeonnam and analyzed the natural coloring material by XRD and EDS-SEM analysis method. In white pigments of Dancheong fragments, it is confirmed that gypsum$(CaSO_{4}{\cdot}2H_{2}O)$, quartz$(SiO_{2})$, white lead$(PbCO_{3})$ and calcite$(CaCO_{3})$ which have been used for white pigments since ancient times and $TiO_{2}$ which is common used in modern times. In red pigments of Dancheong fragments, it is confirmed that hematite$(Fe_{2}O_{3})$ and red lead$(Pb_{3}O_{4})$, which have been used for red pigments since ancient times and C.I. pigment orange $13(C_{32}H_{24}C_{12}N_{8}O_{2})$ but there is no cinnabar(HgS) which has been used since B.C. 3000 in China. In yellow pigments of Dancheong fragments, it is confirmed that crocoite$(PbCrO_{4})$ and massicot(PbO). In blue pigments of Dancheong fragments, it is confirmed that sodalite$(Na_{4}BeAlSi_{4}O_{12}Cl)$ and nosean $(Na_{8}Al_{6}Si_{6}O_{24}SO_{4})$ as coloring material of blue pigment and C.I. pigments blue $29(Na_{7}Al_{6}Si_{6}O_{24}S_{3})$ which is used in modern times. In green pigments of Dancheong fragments, it is confirmed that calumetite$(Cu(OHCI)_{2}{\cdot}2H_{2}O)$, escolaite(Cr2O3), dichromium trioxide$(Cr_{2}O_{3})$, emerald green$(C_{2}H_{3}As_{3}Cu_{2}O_{8})$, and C.I. pigments green$(C_{32}H_{16}-XCl_{x}Cu_{8})$ which is used in modern time. In black pigments of Dancheong fragments, Chiness ink(carbon black) is confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Progress in Superconductivity
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• v.9 no.1
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.56-59
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• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.214-219
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• 2000

In this paper the structural dielectric and piezoelectric properties of Pb［(M $g_{1}$2// $W_{1}$2/)$_{x}$-(N $i_{1}$3//N $b_{2}$3/)$_{0.15-x-(Zr_{0.5})}$ $Ti_{0.5}$)$_{0.85}$］ $O_3$ (x=0.0~0.10) ceramic were investigated with the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$. According to the substitution of Pb(M $g_{1}$2//W/1/2/) $O_3$ curie temperatures were slightly decrease due to the decrease of the tetrag-onality of crystal structure and coercive fields were decreased. Up to the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ 3mol%,remnant polarization dielectric constant piezoelectric constant were increased. Dielectric constant and electro-mechanical coupling factor( $k_{p}$, $k_{31}$ ) were appeared the highest value of 2230, 0.64, and 0.38 and piezoelectric constant( $d_{33}$ , $d_{31}$ ) was the largest value of 418, 202($\times$10$^{-12}$ /C/N), respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/N) respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ was 3mol%.s 3mol%.%.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.05a
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• pp.155-160
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• 2002

Metal matrix composites had generated a lot of interest in recent times because of significant in specific properties. It was also highlighted as the materials of frontier industry because strength, heat-resistant, corrosion-resistant, wear-resistant were superiored. In this study the strength properties of $Al_{18}B_4O_{33}/AC4CH$ were represented mixing the binder of $Al_2O_3$ and $TiO_2$. It was also fabricated by squeeze casting. $Al_{18}B_4O_{33}/AC4CH$ was fabricated at the melt temperature of $760^{\circ}C$ the perform temperature of $700^{\circ}C$ and mold temperature of $200^{\circ}C$ under the pressure of 83.4MPa and observed SEM. Fatigue crack growth rate tests on compact tension specimen(half-size) of thickness 12.5mm were conducted by using sinusoidal waveform. Compact tension specimens(half-size) were used and fatigue crack growth rate da/dN and stress intensity factor range ${\Delta}K$ were analyzed concerning to the R value of 0.1 and 0.05. In order to find out the value of ${\Delta}K$, load amplitude constant method was applied by the standard fatigue testing method describes in ASTM E647-95a. As the results of this study, Fatigue crack growth rate increased with in creasing the load ratio, Consequently, At equivalent stress intensity factors, the fatigue crack growth rates in MMC were faster than those of AC4CH alloy. then the fatigue life and the fatigue crack growth rate was investigated using scanning election microscopy(SEM)

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1061-1070
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• 2023

Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs₂TiI₆ and Ba₂AgIO₆ displayed superior photon attenuation properties. A 3.5 cm thick Ba₂AgIO₆-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr₃ and La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba₂AgIO₆ showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.