• 제목/요약/키워드: B$_2$O$_3$

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Study on Low-Temperature sintering of Co2Z type Ba ferrites for chip inductor (Chip inductor용 Co2Z type Ba-ferrite의 저온소결에 관한 연구)

  • 조균우;한영호;문병철
    • Journal of the Korean Magnetics Society
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    • v.12 no.5
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    • pp.195-200
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    • 2002
  • Low temperature sintering of Co$_2$Z type Ba ferrites with various oxide additives has been studied. Co$_2$Z phase was obtained by 2 step calcination and XRD peaks showed a good agreement with the peaks of the standard Co$_2$Z phase, except for some minor extra peaks. ZnO-B$_2$O$_3$ glass, ZnO-B$_2$O$_3$ and CuO, ZnO-B$_2$O$_3$ and Bi$_2$O$_3$, and ZnO-Bi$_2$O$_3$ glass were added to lower sintering temperatures. Specimens were sintered at the temperature range between 900 $^{\circ}C$ and 1000 $^{\circ}C$. In the single addition of ZnO-B$_2$O$_3$ glass, the specimen with 7.5 wt% showed the highest shrinkage. Specimens with complex addition of ZnO-B$_2$O$_3$ glass with CuO or Bi$_2$O$_3$ showed higher shrinkages and initial permeabilities than single addition of ZnO-B$_2$O$_3$ glass. Shrinkages and initial permeabilities of the specimens with ZnO-Bi$_2$O$_3$ glass were higher than those of ZnO-B$_2$O$_3$ glass addition.

Characterization of $SiO_2-P_2O_5-B_2O_3$ Glass Soot fabricated by Flame Hydrolysis Deposition (화염 가수분해 증착에 의해 형성된 $SiO_2-P_2O_5-B_2O_3$ 유리 미립자의 특성)

  • 최춘기;정명영;최태구
    • Journal of the Korean Ceramic Society
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    • v.34 no.8
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    • pp.811-816
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    • 1997
  • SiO2-P2O5-B2O3 glass soot was fabricated by flame hydrolysis deposition and their properties by SEM, XRD, TGA-DSC were investigated., The mechanism of consolidation process of a glass soot as a function of consolidation temperature was analyzed by SEM observations. In the XRD patterns, the crystalline peaks which seem to be generated from B2O3 and BPO4 were observed. When the temperature of heat treatment exceeded 105$0^{\circ}C$, the non-crystalline state of SiO2-P2O5-B2O3 glass was observed. In the TGA-DSC curves, the evaporation of water molecule by a sudden endothermic reaction was observed at 128$^{\circ}C$ and a broad endothermic peak was seen in the temperature range of 40$0^{\circ}C$-95$0^{\circ}C$, without any weight loss. Finally, this peak was began to recover its baseline at 953$^{\circ}C$. This point is equal to the temperature at which the densification begins. Furthermore, we observed that the addition of dopants such as P2O5 and B2O3 decrease the onset of consolidation temperature till 95$0^{\circ}C$.

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Effect of $B_{2}O_{3}$ addition on mechanical strength and microstructure of a porous $LiAlO_{2}$ electrolyte support for molten carbonate fuel cells (용융 탄산염 연료전지용 gamma $LiAlO_{2}$ 전해질 지지체의 미세구조 및 기계적 강도 변화에 대한 $B_{2}O_{3}$ 첨가의 영향)

  • Ham, Hyung-Chul;Yoon, Sung-Pil;Hong, Seong-Ah
    • New & Renewable Energy
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    • v.3 no.1 s.9
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    • pp.54-59
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    • 2007
  • A sintering aid, $B_{2}O_{3}$ have been included into a $LiAlO_{2}$ electrolyte support by a tape casting method in order to reinforce mechanical strength of the support for molten carbonate fuel cells [MCFCs). Starting idea originates from the low melting point of $B_{2}O_{3}$ ($450^{\circ}C$), which can provide the low temperature consolidation of ceramic materials. The mechanical properties and the microstructure changes of the $B_{2}O_{3}$-included electrolyte support were examined by scanning electron microscope, mercury porosimetry, X-ray powder diffraction [XRD], high temperature differential scanning calorimeter and three-point bending strength measurement. The mechanical strength was clearly improved by addition of $B_{2}O_{3}$. The increase of mechanical strength results from the neck growth of a new $LiAlO_{2}$ phase between $LiAlO_{2}$ particles by the liquid phase sintering. Average pore size and porosity of the electrolyte support reinforced by addition of the sintering aid, $B_{2}O_{3}$, was $0.24{\mu}m$ and 59%, respectively which were suitable microstructure of a matrix for an application of MCFCs.

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Low Temperature Sintering of B2O3 -added (Zn0.8Mg0.2)TiO3 Microwave Dielectric Ceramics (B2O3 가 첨가된 (Zn0.8Mg0.2)TiO3 마이크로파 유전체 세라믹스의 저온소결)

  • Bang, Jae-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.29-34
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    • 2006
  • The effects of $B_2O_3$ addition on the low-temperature sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the amount of $B_2O_3$ and sintering temperature. Temperature coefficient of resonance frequency($T_f$) changes to a positive value with increasing the amount of $B_2O_3$ due to the increased amount of rutile phase which is one of the reaction products between $(Zn_{0.8}Mg_{0.2})TiO_3$ and $B_2O_3$. For $6.19 moi.{\%}B_2O_3$-added $(Zn_{0.8}Mg_{0.2})TiO_3$ system, it exhibits ${\epsilon}_r$ = 23.5, $Q{\times}f_o$ = 53,000 GHz, and $T_f$ = 0 ppm/$^{\circ}C$ when sintered at $900^{\circ}C$ for 5 h.

Studies of Refractive Index and Hardness from the structures in Quarternary Li2O-B2O3-Al2O3-SiO2 Glasses (4성분 Li2O-B2O3-Al2O3-SiO2 유리들의 구조로부터 굴절률과 경도 연구)

  • Moon, Seong-Jun
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.27-31
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    • 2002
  • Quarternary $Li_2O-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated by the function of $R({\equiv}Li_2Omole%/B_2O_3mole%)$ and $K({\equiv}(Al_2O_3mole%+SiO_2mole%/B_2O_3mole%)$. The structures of these glasses were investigated through refractive index and Vicker's hardness. The refractive index increased as the increase of the polarizability in the glass network. In the region of low $Li_2O$ content, the refractive index increased due to the increase of the polarizability in the glass network but, in the region of high $Li_2O$ content, the rate of increase of the refractive index decreased due to the increase of the molar volume caused by the formation of $BO_3{^-}$ units with relatively high molar volume. And, the refractive index decreased as the increase of $Al_2O_3+SiO_2$ content with the molar volume in the glass network. The increase and decrease of vicker's hardness values for those glasses depended on the fraction of tetrahedral $BO_4$ units and it of triangle $BO_3{^-}$ units with non-bridging oxygen, respectively.

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Effects of Additives on the Characteristics of Sodium Borosilicate Thin Film Fabricated by AFD Method (첨가제가 AFD법에 의해 제조된 광소자용 Sodium Borosilicate 박막의 물성에 미치는 영향)

  • Chung, Hyung-Gon;Chun, Young-Yun;Mun, Jong-Ha;Chung, Suck-Jong;Lee, Hyung-Jong
    • Korean Journal of Materials Research
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    • v.8 no.8
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    • pp.693-698
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    • 1998
  • The effects of $AI_{2}$$O_{3}$ and the ratio of $Na_2O/B_2O_3$ on the phase separation and optical properties of sodium borosilicate glass film fabricated by AFD(Aerosol Flame Deposition) were investigated. When AI,O, of 6wt% was added to $66SiO_2-27B_2O_3-7Na_2O$ the clear glass film without any crystallization was produced under air-quenching condition after consolidation. As the amount of $AI_{2}$$O_{3}$ increased from 1.5 to 6.0 wt% the refractive index linearly increased from 1.4610 to 1.4701, and the difference of TE and TM mode causing by residual stress in film increased gradually. However, the difference of TE and TM mode to reveal birefringence could be minimized by annealing below the glass transition temperature after consolidation and air quenching. On the other hand. as the ratio of $Na_2O/B_2O_3$ increased the refractive index and birefringence of glass film tended to increase, but the measurement of their values were not available at over the critical ratio of $Na_2O/B_2O_3$, because of the cloudiness due to crystallization. The phase separation was greatly accelerated with increasing the ratio of $Na_2O/B_2O_3$.

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Synthesis of $TiB_2-Al_2O_3$ Composite by Self-Propagating High Temperature Synthesis (SHS) and Its Pressureless Sintering (SHS법에 의한 $TiB_2-Al_2O_3$계 복합물의 합성 및 상압소결에 관한 연구)

  • 최상욱;조동수;김세용;남건태
    • Journal of the Korean Ceramic Society
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    • v.31 no.5
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    • pp.552-560
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    • 1994
  • A composite of TiB2-Al2O3 system was successfully prepared from a mixture of TiO2, B2O3, and Al by self-propagating high temperature synthesis (SHS) with a novel characteristic, utilizing the internal oxidation heat of aluminium metal of the mixture, instead of by a conventional technique, externally heating a mixture of Ti, B and Al2O3. From a mixture with B/Ti molar ratio of =2.0, pure two phases of TiB2 and $\alpha$-Al2O3 with good crystallinity and small, uniform sizes were formed. However, when the B/Ti molar ratio of the mixture goes to a value less than 2.0, in addition to the above main minerals, a small smounts of metastable phases such as TiB and Ti3B4 were formed. It was found that about 60%, the optimum green density of compacts gave their highest reaction rate and temperature during SHS process. TiB2-Al2O3 system composite with B/Ti molar ratio of =2.0 could be pressurelessly sintered even at 190$0^{\circ}C$ under Ar gas flows without any addition of sintering aids, showing their good properties such as 91.2% in relative density, 2750 kgf/$\textrm{mm}^2$ in Vickers hardness and 2620 kgf/$\textrm{cm}^2$ in flexural strength.

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Effect of B2O3 Additives on GaN Powder Synthesis from GaOOH (GaOOH로부터 GaN 분말의 합성에 미치는 B2O3의 첨가효과)

  • Song, Changho;Shin, Dongwhee;Byun, Changsob;Kim, Seontai
    • Korean Journal of Materials Research
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    • v.23 no.2
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    • pp.104-111
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    • 2013
  • In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

Control of carrier concentrations by addition of $B_{2}O_{3}$ in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth (수직경사응고(VGF)법에 의한 Si 도핑 GaAs 단결정 성장시 $B_{2}O_{3}$ 첨가에 따른 캐리어 농도 변화)

  • Bae, So-Ik;Han, Chang-Woon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.2
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    • pp.75-78
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    • 2009
  • Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

Dielectric/piezoelectric Properties of Mn-Doped PMN-PZT with Variations of the Sintering Temperature and Addition of B2O3 (소결온도와 B2O3첨가량에 따른 Mn첨가 PMN-PZT의 유전 및 압전특성의 변화)

  • Shin Hyo-Soon
    • Journal of the Korean Ceramic Society
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    • v.41 no.9
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    • pp.709-714
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    • 2004
  • The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt% B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt% of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt% of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50% and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt% B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5% regardless of the amount of B$_2$O$_3$.