• Journal of Microbiology and Biotechnology
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• 제17권3호
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• pp.428-437
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• 2007

The potential for humic substances to serve as terminal electron acceptors in microbial respiration and the effects of humic substances on microbial azoreduction were investigated. The dissimilatory azoreducing microorganism Shewanella decolorationis S12 was able to conserve energy to support growth from electron transport to humics coupled to the oxidation of various organic substances or $H_2$. Batch experiments suggested that when the concentration of anthraquinone-2-sulfonate (AQS), a humics analog, was lower than 3 mmol/l, azoreduction of strain S12 was accelerated under anaerobic condition. However, there was obvious inhibition to azoreduction when the concentration of the AQS was higher than 5 mmol/l. Another humics analog, anthraquinone-2-sulfonate (AQDS), could still prominently accelerate azoreduction, even when the concentration was up to 12 mmol/l, but the rate of acceleration gradually decreased with the increasing concentration of the AQDS. Toxic experiments revealed that AQS can inhibit growth of strain S12 if the concentration past a critical one, but AQDS had no effect on the metabolism and growth of strain S12 although the concentration was up to 20 mmol/l. These results demonstrated that a low concentration of humic substances not only could serve as the terminal electron acceptors for conserving energy for growth, but also act as redox mediator shuttling electrons for the anaerobic azoreduction by S. decolorationis S12. However, a high concentration of humic substances could inhibit the bacterial azoreduction, resulting on the one hand from the toxic effect on cell metabolism and growth, and on the other hand from competion with azo dyes for electrons as electron acceptor.

• 한국미생물·생명공학회지
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• 제30권3호
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• pp.287-292
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• 2002

본 연구에서는 경안천 유역에 있는 주유소 오염토양으로부터 대표적인 아조계 염료 congo-red분해능이 우수한 토양 방선균, SMA-2를 분리 선별하고, SMA-2의 배양조건을 최적화하여 2,4-dichlorophenol의 산화에 관여하는 actinomycetes lignin peroxidase(ALiP)의 활성도에 대한 특성을 규명하였다. 기존에 보고된 방선균 유래 ALiP와는 달리, SMA-2유래 ALiP효소는 pH6에서 최고의 활성을 보였으며, 2,4-DCP와 $H_2$$O_2$에 대한 Km값이 각각 0.21mM과 8.5mM로 측정되었다. 또한 최적화된 배지에서 성장한 SMA-2의 배양액은 2,4-dichlorophenol 뿐만 아니라 2-chlorophenol, 2,4,6-trichlorophenol, 2,6-dichlorophenol, phenol, 4-chloropheno떼 대해서도 산화능을 보임으로써, 토양 방선균을 이용한 염화 페놀계 화합물이 포함된 오염 토양의 생복원 가능성을 제시하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.243.2-243.2
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• 2011

ZnO materials with a wide band gap of approximately 3.3 eV has been used in transparent conducting oxides (TCO) due to exhibitinga high optical transmission, but its low conductivity acts as role of a limitation for conducting applications. Recently, Ga or Al-doped ZnO (GZO, AZO) becomes transparent conducting materials because of high optical transmission and excellent conductivity. However, the fundamental mechanism underlying the improvement of electrical conductivity of the GZO is still the subject of debate. In this study, we have fully investigated the reasons of high conductivity through the characterization of plane defects, crystal orientation, doping contents, crystal structure in Zn1-xGaxO (x=0, 3, 5.1, 5.6, 6.6 wt%). We manufactured Zn1-xGaxO by sintering ZnO and Ga2O3 powers, having a theoretical density of 99.9% and homogeneous Ga-dopant distribution in ZnO grains. The GZO containing 5.6 wt% Ga represents the highest electrical conductivity of $7.5{\times}10^{-4}{\Omega}{\cdot}m$. In particular, many twins and superlattices were induced by doping Ga in ZnO, revealed by X-ray diffraction measurements and TEM (transmission electron microscopy) observations. Twins developed in conventional ZnO crystal are generally formed at (110) and (112) planes, but we have observed the twins at (113) plane only, which is the first report in ZnO material. Interestingly, the superlattice structure was not observed at the grains in which twins are developed and the opposite case was true. This structural change in the GZO resulted in the difference of electrical conductivity. Enhancement of the conductivity was closely related to the extent of Ga ordering in the GZO lattice. Maximum conductivity was obtained at the GZO with a superlattice structure formed ideal ordering of Ga atoms.

• 한국정보통신학회논문지
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• 제16권8호
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• pp.1747-1752
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• 2012

탄소를 포함한 SiOC 박막은 BTMSM과 산소의 혼합 프리커서를 이용하여 CVD방법으로 증착하였다. 전통적으로 유전상수를 측정하기 위해서 MIS(금속/절연막/반도체)방법을 이용하는데 박막의 균일성을 보장할 수 없기 때문에 나타나는 오차의 한계를 보상하기 위해서 광학적인 분석방법과 경도측정 등을 통하여 SiOC 박막이 분극이 낮아지는 영역을 추적하였다. 분극이 낮고 비정질성이 높은 박막에서 유전상수가 낮아지는 특성을 이용하여 유전상수를 도출하였다. 열처리 후 SiOC 박막의 유전상수는 분극의 감소에 의해 감소하였으며, FTIR 분석에 의한 결합신호는 높은 파수 영역으로 이동하였다. 950~1200 cm-1 영역의 주 결합은 Si-C와 Si-O 결합으로 이루어졌으며, Si-O 결합의 강도가 증가한 것은 결합력이 증착한 샘플에서 보다 증가하였다는 것을 의미하며, 열처리 후 더 안정된 박막이 되었다. 열처리 후 SiOC 박막은 유전상수가 2.06으로 낮게 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• 한국재료학회지
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• 제21권9호
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

• Environmental Engineering Research
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• 제25권4호
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• pp.571-578
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• 2020

In this work, a detailed study on the electrochemical degradation of an azo dye, Orange G is performed using a platinum electrode. Indeed, the influence of the dye concentration (50-150 mg/L), the pH of the medium and the density of the electric current is studied on the rate of discoloration, the rate of mineralization, the efficiency of the electric current and the energy consumption. The UV-visible spectra of OG plotted against the degradation time show the decrease of the intensity of the characteristic dye peaks. In an environment rich in chlorides, all peaks disappear after 15 min of degradation. However, the peaks at wavelengths of 200 and 290 nm appeared after one hour of treatment. In K₂SO₄, the eliminated percentages are respectively 46, 54 and 61% for wavelengths of 245, 330 and 480 nm. This suggests that the degradation mechanisms in K₂SO₄ and KCl environments are not the same. In the middle rich in chlorides, the eliminated percentage of OG did not seem to be affected by the concentrations increase. These results confirm the hypothesis that electrochemical oxidation process is very favorable for concentrated pollutants discharge.

• 패션비즈니스
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• 제21권2호
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• pp.105-112
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• 2017

A string wallcovering is a kind of textile wallcovering which is made of cellulose fiber yarn laminated on base paper. Compared with normal paper or PVC wallpaper, a string wallcovering is preferred continually in the interior design market, as it is not only environmentally friendly but it also has less cost on mass production without the weaving process and has a natural visual effect, excellent functionality such as thermo keeping, permeability, sound absorption. However, in the dyeing process, it is not appropriate to use plenty of energy such as water, electricity, steam or chemicals considering the environmental trend and the government policy plenty of energy such as water, electricity, steam or chemicals. Currently, a string wallcovering is made of raw white yarn and padding with direct dye or pigment which includes toxic elements, especially the use of direct dye is restricted in a part of the developed country due to inclusion of azo. In this study, we researched dyeing based on cold pad batch dyeing of a string wallcovering with reactive dyestuff. The peel strength and bending depth test confirmed that the optimum adhesive type and spread amount improved the water resistance of the string wallcovering. Also, pad batch dyeing with optimum reactive dyestuff enhanced the color fastness to light and rubbing in dry and wet conditions. Additionally, for improvement of color fastness to rubbing in a wet condition, the additional treatment finishing without soaping process which is used water. The results of this study can be used as basic data for environmentally friendly and energy saving of the textile wallcovering.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.52.2-52.2
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• 2011

본 연구의 목적은 CIGS 태양전지의 두 가지 TCO층 중 AZO를 제외한 intrinsic ZnO의 전자빔 처리 영향에 대한 특성 분석을 하고자 함이다. 또한 추후 CIGS 태양전지를 제조하여 적용 시 전자빔 처리 전후의 특성이 어떻게 변하는지를 알아보기 위한 사전 실험이다. Intrinsic ZnO는 RF magnetron sputter 를 이용하여 약 100nm의 두께로 증착 하였다. 이때 공정 압력을 변수로 RF power는 80W로 설정 하였으며 Ar 분압은 10mtorr, 5mtorr, 1mtorr로 각각 달리 하며 증착 하였다. 이후 전자빔 처리를 위해 각각의 시편에 Argon flow 7sccm 상태에서 DC power 3kW, RF power 300W의 세기로 전자빔 처리를 실시 하였다. 전자빔 처리에 따른 전기적, 구조적 특성을 분석하기위해 Hall measurement와 SEM, XRD, UV-vis spectroscopy을 사용하였다. 먼저 Hall measurement 측정을 통한 전기적 분석 결과 비저항이 무한대에서 약 $40m{\Omega}{\cdot}cm$로 감소된 결과를 도출 할 수 있었으며, $2{\sim}3.4{\times}10^{18}/cm^3$ 이상의 carrier density 가 측정 되었다. UV-vis spectroscopy를 이용한 투과도 측정결과 모든 시편에서 Band gap이 감소하는 결과를 보였다. SEM, XRD를 이용한 분석결과 결정성 및 grain의 크기가 증가하는 결과를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.104-104
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• 2011

ZnO는 3.37 eV의 넓은 에너지 밴드갭을 갖는 투명 전도성 반도체이며 우수한 전기적, 광학적 특성으로 인해 광원소자 개발을 위한 새로운 물질로 많은 주목을 받아왔다. 더욱이, ZnO는 쉽게 나노구조 형성이 가능하기 때문에 이를 응용한 가스센서, 염료감응태양전지, 광검출기 등의 소자 개발이 활발히 이루어지고 있다. 최근에는 GaN 기반 발광다이오드 (light emitting diode, LED)의 광추출 효율을 향상시키기 위한 ZnO 나노구조 응용에 관한 연구가 보고되고 있다. GaN 기반 LED의 경우 반도체 물질과 공기 사이의 높은 굴절률 차이로 인하여 낮은 광추출 효율을 나타낸다. 이를 해결하기 위한 방법으로 표면 roughening, texturing 등 에칭공정을 이용해 광추출 효율을 개선하려는 연구들이 보고되고 있으나, 복잡한 공정과정을 필요로 하고 에칭공정에 의한 소자 표면 손상으로 전기적 특성이 나빠질 수 있다. 반면 전기화학증착법으로 성장된 ZnO 나노구조를 이용할 때, 보다 간단한 방법으로 쉽고 빠르게 나노구조를 형성할 수 있고 낮은 공정온도를 가지기 때문에 소자의 전기적 특성에 큰 영향을 주지 않는다. 수직방향으로 잘 정렬된 ZnO 나노구조를 갖는 LED의 경우 내부 Fresnel 반사 손실을 효과적으로 줄여 발광 효율을 크게 향상시킬 수 있다. 따라서, ZnO 나노구조의 성장제어 및 성장특성을 분석하는 것은 매우 중요하다. 본 연구에서는 ITO glass 위에 ZnO 나노구조를 성장하고 그 특성을 분석하였다. ITO glass 기판 위에 RF magnetron 스퍼터를 사용하여 Al 도핑된 ZnO (AZO)를 얇게 증착한 후 전기화학증착법으로 ZnO 나노구조를 성장하였다. 농도, 인가전압, 공정시간 등 다양한 공정조건을 변화시키면서 성장 메커니즘을 분석하였고, scanning electron microscope (SEM) 및 X-ray diffraction (XRD)을 통하여 구조 및 결정성 등을 분석하였다. 또한, UV-Visible-NIR spectrophotometer를 사용하여 투과율을 실험적으로 측정하여 ZnO 나노구조의 광학적 특성을 분석하였고, rigorous coupled wave analysis (RCWA) 방법을 사용하여 계면에서 발생하는 내부 반사율을 계산함으로써 나노구조의 효과를 이론적으로 분석하였다.