• 암석학회지
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• 제17권4호
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• pp.238-244
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• 2008

국보 제 112호로 지정되어 있는 감은사지 삼층석탑(서탑)은 표면 풍화로 인한 훼손 상태가 심각하여 빠른 시간 내에 보수되어야 한다. 표면균열에 대한 부분적인 관찰 결과 2층 탑신면에는 수직균열이 발달한다. 이는 상하로 작용하는 강한 주 압축력에 평행하게 발달한 균열이 더욱 더 성장한 것이라고 판단된다. 균열 성장의 원인에는 이미 존재하던 수직균열을 이용한 화학적 풍화작용 및 생물학적 풍화작용이 가세했을 가능성이 높다. 3층 옥개석의 경우 표면균열은 북동방향과 북서방향으로 교차하는 향상으로 발달하고 있다. 3층 옥개석의 동쪽과 남쪽에서 많은 수의 균열이 관찰되며, 중심축에서 바깥쪽으로 잇는 수직균열과 바깥쪽의 수평균열들이 발달하고 있다. 한편, 3층 옥개석의 서쪽과 북쪽은 균열이 많이는 관찰되지 않으며, 대부분 수평균열이 발달하고 있다. 이는 중심축에서의 압축력이 모든 방향으로 동일하지 않으며, 무게 중심이 동쪽과 남쪽 방향으로 기울어져 이 방향으로 강한 압축력이 제공되는 것으로 판단된다.

• 한국구조물진단유지관리공학회 논문집
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• 제20권4호
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• pp.144-152
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• 2016

본 논문은 단차가 있는 철근콘크리트 보에서 인장을 받는 하부 철근의 겹침이음 상세에 고강도 갈고리 철근 및 확대머리 철근을 사용하기 위하여 겹침이음 성능평가를 위한 실험적 연구결과를 다룬다. 겹침이음길이와 겹침이음구간내 스터럽 보강유무를 주요 변수로 한 실험을 통하여, 파괴유형, 초기강성, 최대내력, 변형성능 등을 분석하였고, KCI2012 정착설계식을 모델로 한 이론내력과 비교하였다. 그 결과, 모든 실험체들에서 확대머리 철근이 위치한 배근 방향으로 발생한 균열에 의하여 최종파괴가 나타났고, 초기 강성 및 휨균열 이후의 강성이 유사하게 나타났다. 스터럽 보강되지 않은 실험체에 대하여 HS 계열 실험체들은 겹침이음길이가 25% 증가할 때, 최대 실험내력은 11.8~18.1% 증가한 반면에, HH 계열 실험체들은 확대머리 철근의 프라이아웃거동에 의한 파괴로 내력 증가의 효과가 없었다. 현행 KCI2012에 의한 정착길이 설계식을 바탕으로 B급 겹침이음과 스터럽보강에 따른 감소계수 0.8을 고려하여 이론 겹침이음내력을 산정한 결과, HS 계열실험체는 이론 내력이 실험내력을 안전측으로 평가하고 있다. 반면에 스터럽이 보강되지 않은 HH 계열 실험체들은 이론내력이 실험내력을 불안전측으로 평가하고 있어 겹침이음 구간 내 스터럽 보강을 하여야 할 것으로 사료된다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.