• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.417-418
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• 2008

• Electronics and Telecommunications Trends
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• v.8 no.1
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• pp.92-110
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• 1993

광통신의 전송용량을 증가시키는 방법의 한가지로 전송속도의 증대에 관한 연구개발이 국내외에서 진행되어 왔다. 전송속도가 증가하여 Gb/s 급 이상이 되면 수신단 전치증폭기의 잡음이 급격히 증가하게 되어 수신감도가 떨어지게 되는데 이는 곧 중계기의 간격 감소로 인한 경제성의 저하를 의미한다. 이러한 수신단의 수신감도 저하를 극복하는 방법의 하나로 내부 이득을 갖는 APD(Avalanche Photodiode)를 수광소자로 사용하고자 하는 연구가 진행되어 왔다. 본 고에서는 InGaAs를 흡수층으로 하는 광통신용 APD의 구조, 동작특성 및 최근 연구동향을 소개하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.37-40
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• 2001

This paper presents the modeling methodology of Zinc diffusion process applied for high-speed avalanche photodiode fabrication using neural networks. Three process factors (sealing pressure, amount of Zn$_3$P$_2$ source per volume, and doping concentration of diffused layer) are examined by means of D-optimal design experiment. Then, diffusion rate and doping concentration of Zinc in diffused layer are characterized by a static response model generated by training fred-forward error back-propagation neural networks. It is observed that the process models developed here exhibit good agreement with experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.789-796
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• 2014

A CMOS photo detection bias quenching circuit is developed to be used with single photon avalanche photodiodes (SPADs) operating in Geiger mode for the detection of weak optical signals. The proposed bias quenching circuits for the performance improvement reduce the circuit size as well as improve the performance of the quenching operation. They are fabricated in a $0.18-{\mu}m$ standard CMOS technology to verify the effectiveness of this technique with the chip area of only $300{\mu}m^2$, which is about 60 % of the previous reported circuit. Two types of proposed circuits with resistive and capacitive load demonstrated improved performance of reduced quenching time. With a commercial APD by HAMAMATSU, the dead time can be adjusted as small as 50 ns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.954-958
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• 2000

The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.731-734
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• 2000

The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Korean Journal of Optics and Photonics
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• v.7 no.1
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• pp.66-71
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• 1996

We analyzed and fabricated InP/InGaAs avalanche photodiode (APD) having floating guard ring (FGR). Since the FGR-APD is very simple to fabricate and highly reliable, the fabrication of FGR-APD and its application to the optical receiver are very useful and interesting. A double zinc diffusion was employed to fabricate and one dimensional electric field analysis was used for design. Two dimensional gain measurement showed that the FGR suppressed gain at the curved edge, indicating the successful behavior as a guard ring. The fabricated device had 35 GHz of gain-bandwidth product, and showed the sensitivity of -31.9 dBm at a bit error rate of $10^{-9}$ when it was applied to a 2.5 Gbps optical receiver.

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.340-346
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• 1994

2.5Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition 과 Liquid Phase Epitaxy법을 이용한 에피성장과 Br:Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 ADP는 10nA 이하의 작은 누설전류를 나타내었고, -38~39 V의 항복전압을 나타내었다. 제작된 ADP를 GaAs FET hybrid 전치증폭기와 결합하여 2.5Gbps 속도에서 $2^{23}-1$의 길이를 갖는 입력 광신호에 대해 $ 10^{-10}$ Bit Error Rate에서 -31.0dBm의 수신감도를 얻었다.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.219-220
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• 2009

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.183-184
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• 2008