• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.188-193
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• 1996

A new display -type spherical mirror analyzer has been characterized in terms of the performance and the auger spectra taken by using it. The final goal with the analyzer is to devleop SET(Surface Electron Spectroscopic Tomography) which is capable to provide a 3-dimensional layer-by-layer information nondestructively. This kind of analyzer was originally designed by H.Daimon. The main feature is to display 2-dimensional electronic structures directly onto a screen. In our case, an external micro-electron beam was employed as an excitation source. However, this invokes various problems because of the interference between the electron beam and the analyzer. The problems have been solved through the optimization of various parameters of the analyzer.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.223-228
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• 1996

$SiO_2$ insulator layers on InSb have been prepared by remote PECVD system a low temperature below $200^{\circ}C$. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the $SiO_2$ were studied. The InSb MIS device using $SiO_2$ was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/$\textrm{cm}^2$ at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was $54\times 10^{11}\textrm{cm}^2-2V^{-1}$.

• Journal of Biosystems Engineering
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• v.28 no.2
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• pp.97-106
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• 2003

One of the obstructing factors against managing dairy fm has been heavy labor requirement for feeding dairy cows. A Power-tiller TMF mixer was developed to reduce the cost and to provide economic benefit. The TMF mixer was desisted by the feeding capacity of 20∼30 heads at a batch with various functioning systems of auger type mixer, delivery conveyer, weighing console, pipe heater type heating system, power transmission train and mounting trailer. According to the study resulted, it showed that 1,200rpm, 1,600rpm, 2,000rpm and 2,300rpm were 6ps. Bps, lops and 12ps respectively. and that reduced shaft output by 15%. On the fodder mixer attached powertiller, initial output was necessary large torque. And the heating system was maintaining uniform temperature 60$^{\circ}C$ relatively.

• Proceedings of the KIEE Conference
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• 2008.04b
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• pp.19-21
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• 2008

현행 배전선로의 전주근가(1.2m 장방형)는 오거크레인을 이용한 건주공사 완료 후 전주근가 시공을 위한 별도의 인력 또는 백호우 장비가 추가로 투입피어 시공함으로써 인력으로는 공사시간이 장기간 소요되고 백호우장비로는 작업장 환경훼손과 시공원가 상승의 문제점이 있었다. 이러한 문제점을 해소하기 위하여 건주공사에 사용되는 오거크레인의 굴착 직경을 80cm까지 확장 가능한 '신축형 오거크레인용 유압식 확장기'와 원형 굴착공에 시공이 가능한 '아치형 전주근가'를 개발하고 이를 이용한 시공기술을 개발함으로써 동일장소에서 굴착작업이 수반되는 건주작업, 전주근가 매설작업을 가능하게 하여 장비활용성 증대, 작업장 환경개선, 공사기간 단축 및 시공원가 절감 등의 효과가 기대되는 기술을 개발하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.240-245
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• 1996

Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).