• 한국진공학회지
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• 제2권4호
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• pp.404-409
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• 1993

Adorption of nitric oxide on the Pt(III) surface sputtered by Ar-ion has been studied using thermal desorption spectroscopy and Auger electron spectroscopy. Ar-ion sputtering creates a precursor state of ($NO\beta$ stage) adsorbe dat defect sites. The precursor state is characterized by the terminal bent species . At low coverge mos 샐 adsorbed NO dissociates . And as increasing the coverage, the fraction of dissociation remains about 80%.

• 한국진공학회지
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• 제4권S1호
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• pp.28-33
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• 1995

TiN 박막은 저온(<$500^{\circ}C$), 저압(1Torr)에서 Tetrakis(diethylamido)titanium[TDEAT, Ti(NEt2)4]single precursor를 사용하여 증착하였다. 증차고딘 박막은 SEM(Scanning Electron Microscopy)으로 surface morphology와 step coverage를 측정하였고, TEM(Transmission Electron Microscopy)분석결과 microcrystalline의 TiN을 확인하였다. XPS(X-ray Photoelectron Spectroscopy)분석결과에 따르면 $200-500^{\circ}C$구간에서는 $\beta$-hydogen elimination에 의한 반응이 일어나고 $600-700^{\circ}C$구간에서는 thermal decomposition에 의한 반응이 일어나고 있음을 알 수 있다. Carbon과 oxygen의 농도는 AES(Auger Electron Spectroscopy)를 사용하여 측정하였으며 온도가 감소할수록 carbon의 농도가 감소하는 경향을 보여주고 있다.

• 한국진공학회지
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• 제4권S1호
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• pp.81-86
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• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제4회 학술발표회 논문개요집
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• pp.29-31
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• 1993

NH3-pplasma treatment has been used for ppassivation of native-oxide-contaminated GaAs surface. Ex-situ band-gapp pphotoluminescence(ppL) measurement shows enhanced intensity for the treated surfaces. Auger electron sppectroscoppy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to sppeculate that the graded GaN thin layer was formed on the surface. Based on these results, new metal-insulator-GaAs structure is ppropposed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.134-134
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• 1994

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.371-372
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• 2009

We have prepared and characterized CIGS nanopowder for absorber layer of photovoltaic. CIGS nanopowder were obtained at $260^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS nanopowder were identified to have a typical chalcopyrite tetragonal structure by using X-ray diffraction(XRD), Inductively Coupled Plasma Auger Electron Spectroscopy (AES), Scanning Electron Microscopy(SEM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 1992년도 제2회 학술발표회 논문개요집
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• pp.51-51
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• 1992

• 한국진공학회지
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• 제5권1호
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• pp.6-13
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• 1996

The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

• 대한전기학회논문지
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• 제41권8호
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• 한국표면공학회지
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• 제33권4호
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• pp.261-265
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• 2000

Geometrically and chemically well defined Pt/alumina model catalysts have been prepared. To this end, we fabricated electrochemically alumina supports in which pores of constant size, length and shape were regularly distributed over a wide area of the surface. Platinum particles were dispersed on the pore surfaces via organometallic chemical vapor deposition technique using (trimethyl) methylcyclopentadienylplatinum (IV) as a precursor. The chemical composition of the alumina plane surfaces was examined by Auger electron spectroscopy and the adsorption characteristics of the platinum particles were studied by thermal desorption spectroscopy. A variety of industrial catalytic problems are now open for further investigation utilizing the Pt/alumina model catalysts.