• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1192-1195
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• 2018

We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of $0.05{\AA}/s$ to $1.14{\AA}/s$. The thickness of the drain-source gold electrode was 50 nm. The mobility was $1.9{\times}10^{-1}cm^2/V{\cdot}s$ at a deposition rate of $0.05{\AA}/s$, the mobility increased to $5.2{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate was increased to $0.4{\AA}/s$, and then the mobility decreased to $6.5{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate decreased to $1.14{\AA}/s$. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate.