• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.693-699
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• 2003

To improve thermal stability of Teflon FEP which is the most widely used materials for electret application, Teflon AF film of 1 $\mu\textrm{m}$ thick was spin coated on FEP film and the charge storage properties were investigated. The surface potential depend on aging temperature. Thermal Stimulated Current(TSC), Atomic Force Microscopy(AFM), and Fourier Transform-Infrared Spectroscope(FT-lR) measurements were carried out. It is shown that the AF/FEP dual film have more higher electrical property and thermal stability than that FEP film have caused by charge stored at interface of AF and FEP.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.98-98
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• 2015

• Nuclear Engineering and Technology
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• 제34권3호
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• pp.202-210
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• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• Bulletin of the Korean Chemical Society
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• 제20권12호
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• pp.1441-1446
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• 1999

Laser-induced fluorescence (LIF) spectroscopy has been applied to study the supersonic jet of radicals of nitric oxide (NO) and atomic iodine produced in the flash pyrolysis of precursors n-butylnitrite (CH₃(CH₂)₃ONO) and allyl iodide (C₃$H_5$I), respectively. The systematic population analysis with spectral simulations demonstrates that the precursors are efficiently pyrolyzed and that radical beams show a substantial supersonic cooling. In addition, absence of local equilibrium was observed in the distributions of two electronic spin-orbit states ²Π$_{1/2}$ and ²Π$_{3/2}$ of NO products and can be rationalized in terms of the efficiency of collision-induced energy transfer rates.

• 한국자기학회지
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• 제5권5호
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• pp.767-771
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• 1995

The atomic structure and magnetic properties of $LaCo_{13}$ amorphous alloy have been investigated and compared with those of its crystalline counterpart. It has been confirmed that the amorphous alloy is composed of the icosahedral clusters with a $NaZn_{13}$-type structure. The magnetic moment and the spin- wave stiffness constant obtained from the magnetic measurements in the amorphous state are larger than those in the crystalline state. The Curie temperature estimated from the reduced magnetization curve for the former is much higher than the value for the latter. The localized magnetic moment character in the amorphous state is stronger than that in the crystalline state.

• 한국수소및신에너지학회논문집
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• 제28권1호
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• pp.63-69
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• 2017

In this work, two different platinum (Pt) counter electrodes have been prepared by spin coating a Pt solution and screen printing a Pt paste on fluorine doped tin oxide (FTO) glass substrate followed by sintering at $380^{\circ}C$ for 30 min. Linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS) analyses of the Pt electrodes showed that the spin coated electrode was catalytically more active than the screen printed electrode. The above result agrees well with the surface morphology of the electrodes studied by atomic force microscopy (AFM) and the photovoltaic performance of the dye-sensitized solar cells (DSSCs) fabricated with the Pt electrodes. Moreover, calculation of current density-voltage (j-V) curves according to diode model with the parameters obtained from the experimental j-V curves and the EIS data of the DSSCs provided a quantitative insight about how the catalytic activity of the counter electrodes affected the photovoltaic performance of the cells. Even though the experimental situations involved in this work are trivial, the method of analyses outlined here gives a strong insight about how the catalytic activity of a counter electrode affects the photovoltaic performance of a DSSC. This work, also, demonstrates how the photovoltaic performance of DSSCs can be improved by tuning the performance of counter electrode materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.238-239
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• 2010

Dimethyl sulphoxide (DMSO) is one of the widely-used secondary dopants in order to enhance the conductivity of poly(3, 4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) film. In this work, we investigated the effect of DMSO doping in to PEDOT:PSS on the electrical performance of the bulk heterojunction photovoltaics consisting of poly(3-hexylthiophene-2, 5-diyl) and phenyl-C61-butyric acid methyl ester. Correlation between the power conversion efficiency and the mechanism of improving conductivity, surface morphology, and contact properties was examined. The PEDOT:PSS films, which contain different concentration of DMSO, have been prepared and annealed at different annealing temperatures. The mixture of DMSO and PEDOT:PSS was prepared with a ratio of 1%, 5%, 15%, 25%, 35%, 45%, 55% by volume of DMSO, respectively. The DMSO-contained PEDOT:PSS solutions were stirred for 1hr at $40^{\circ}C$, then spin-coated on the ultra-sonicated glass. The spin-coated films were baked for 10min at $65^{\circ}C$, $85^{\circ}C$, and $120^{\circ}C$ in air. In order to investigate the electrical performance, P3HT:PCBM blended film was deposited with thickness of 150nm on DMSO-doped PEDOT:PSS layer. After depositing 100nm of Al, the device was post-annealed for 30min at $120^{\circ}C$ in vacuum. The fabricated cells, in this study, have been characterized by using several techniques such as UV-Visible spectrum, 4-point probe, J-V characteristics, and atomic force microscopy (AFM). The power conversion efficiency (AM 1.5G conditions) was increased from 0.91% to 2.35% by tuning DMSO doping ratio and annealing temperature. It is believed that the improved power conversion efficiency of the photovoltaics is attributed to the increased conductivity, leading to increasing short-circuit current in DMSO-doped PEDOT:PSS layer.

• 한국자기학회지
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• 제10권1호
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• pp.16-21
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• 2000

Spin-Peierls(SP) 전이 현상을 나타내는 $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$를 제조하여 자기적 특성과 결정학적 특성을 알기 위하여 x선 회절, 자기감수율과 Mossbauer 스펙트럼을 측정 분석하였다. 결정구조는 직방정계(orthorhombic)였고 격자 상수는 a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$이며, SP 전이 온도($T_{sp}$)는 13 K임을 알아냈다. 상온에서 Mossbauer 스펙트럼은 $Fe^{3+}$ 이온에 의한 두 개의 Zeeman선과 한 개의 이중선이 중첩되어 나타났다. Ge 이온만을 Fe 이온으로 치환시켜 만든 시료의 Mossbauer스펙트럼은 Zeeman 선을 나타내고, Cu 이온만을 Fe 이온으로 치환시켜 만든 시료의 Mossbuer 스펙트럼은 이중선을 나타내는 것으로 보아 각각의 선이 Ge와 Cu 자리로 치환되어 들어간 Fe 이온에 의한 것으로 생각된다. 또한 $T_{sp}$ 이하에서 Mossbauer 변수들의 불연속을 이중체가 형성되면서 나타나는 이온들의 위치 이동에 관련시켜 해석하였다. 본 시료외 N el온도는 715 K이고, Debye온도는 팔면체 자리가 540 K, 사면체 자리가 380 K임을 알아냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국자기학회지
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• 제15권2호
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• pp.125-129
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• 2005

$A1_2O_3$ 기판을 하지층으로 하는 Ba-ferrite 박막을 pulsed laser deposition system으로 제조하여 결정학적 및 자기적 성질을 SEM, $M\ddot{o}ssbauer$ 분광법 및 VSM을 사용하여 연구하였다. Ba-ferrite박막은 $A1_2O_3$ 기판위에 PLD를 이용하여 기판온도 $400^{\circ}C$, 산소압력 0.1 Torr로 증착 하였고 증착 시간을 달리하여 두께 조절하였다. Ba-ferrite 박막은 5분 증착한 시료에서만 판상으로 결정이 형성되었음을 볼 수 있고 그보다 두꺼운 시료의 경우에는 침상모양과 판상모양이 임의의 방향으로 혼재되었음을 확인하였다. $M\ddot{o}ssbauer$ssbauer 분광법으로부터 측정된 Ba-ferrite결정 내 Fe 원자의 스핀 방향은 두께가 얇을수록 판상의 결정이 많이 존재하여 기판에 수직으로 정렬하려는 경향을 보이고 있다. VSM으로 측정한 자기이력곡선은 판상과 침상의 상이한 2가지 형태가 공존하는 것으로 나타났다.