• Applied Microscopy
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• 제42권4호
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• pp.218-222
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• 2012

Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir$\acute{e}$ pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.

• Applied Microscopy
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• 제36권spc1호
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• pp.41-46
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• 2006

Interfacial atomic structure (chemical structure) of a Pd/ZnO hetero junction was investigated by atomic resolution high voltage transmission electron microscopy (ARHVTEM). A misfit dislocation did not work as a stress accommodation mechanism in the ZnO(0001)/Pd (111) interface. But the periodic stress localization occurred in the ZnO($10\bar{1}0$)/(200) interface. The periodicity of the local strain coincided with that of misfit dislocation. Atomic structure image of the ARHVTEM showed that an atomic arrangement across the interface was in the order of O-Zn-Pd. It was shown that mechanical weakness of the ZnO(0001)/Pd(111) interface against cyclic heating is attributable to the absence of the periodic stress localization of the misfit dislocation.

• Journal of Radiation Protection and Research
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• 제29권1호
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• pp.25-31
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• 2004

Results of EGS4 based calculations to study the spatial resolution of gas detectors are described. The calculations include radial distribution of electrons generated by photons of various energies penetrating into variable thickness of Ar and Xe gas layers. Given a desired spatial resolution, the maximum allowed thickness of gas layer for each energy level is determined. In order to obtain 0.1mm spatial resolution, the maximum thickness for the Ar gas is found to be 2mm for photon energies below 14keV while the optimum energy of photons for Xe gas with the same thickness is about 45keV. The results of calculations performed to compare the number of electrons generated by CsI coated micro-channel plate and the number of electrons generated by the Ar and Xe gas layers are described. The results show that the number of electrons generated by the gases is about 10 times higher than the one generated by CsI coated micro-channel plate. A few sample gray scale images generated by these calculations are included.

• Nuclear Engineering and Technology
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• 제53권6호
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• pp.2011-2018
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• 2021

Nowadays, evaluation of amounts and distributions of radioactive waste is an important preparatory step in the process of nuclear reactor decommissioning. For tentative estimation of radioactive waste, a cell-based rigorous 2 step (R2S) method usually is used; however, a poor resolution caused by the averaged flux and spectrum in a cell is still a great challenge because of leading to underestimated or overestimated results. To overcome the poor resolution, several systems were introduced. Neither system, however, provides any function for evaluation of radioactive waste amount and distribution. Thus, it is additionally required to classify radioactive waste based on the results of activation calculation. In this study, the advanced R2S (AR2S) system was developed. To verify the performance of the system, its results for a verification problem were compared with those of the cell-based R2S method. The results showed good agreement, which is to say, within 2.0% relative error. Also, several characteristics of fine/coarse mesh were analyzed. To demonstrate the performance of the AR2S system, the radioactive waste from the Japan Power Demonstration Reactor (JPDR) was estimated, and the result indicated a high-resolution distribution. Therefore, it is expected that the AR2S system will prove useful for precise evaluation of radioactive waste.

• 한국세라믹학회지
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• 제26권2호
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• pp.276-288
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• 1989

Interpretation of high-resolution transmission electron microscopy images of defects and complex structures such as found in ceramics generally requires matching of the images with compound image simulations for reliable interpretation. A transmission electron microscopy study of the aluminum oxide was carried out at high-resolution, so that the crystal structure of the aluminum oxide could be modelled on an atomic level. In conjunction with computer simulation comparisons, the images reveal directly the atomic structure of the oxide. Results show that comparison between experimental high-resolution electron microscopy images and simulated images leads to a one to one correspondence of the image to the atomic model of the aluminum oxide. The aluminum atoms are disordered in the octahedral sites and the tetrahedral sites in the spinel aluminum oxide.

• 한국정밀공학회지
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• 제15권3호
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• pp.99-106
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• 1998

Recently, scientists introduced a new type of microscope capable of investigating nonconducting surfaces in an atomic scale, which is called AFM (Atomic Force Microscope). It was an innovative attempt to overcome the limitation of STM (Scanning Tunnelling Microscope) which has been able to obtain the image of conducting surfaces. Surfaces of samples are imaged with atomic resolution. The AFM is an imaging tool or a profiler with unprecedented 3-D resolution for various surface types. The AFM technology, however, leaves a lot of room for improvement due to its delicate and fragile probing mechanism. One of the room for improvements is gap control between probe tip and sample surface. Distance between probe tip and sample surface must be kept in below one Angtrom in order to measure the sample surface in Angstrom resolution. In this paper, AFM system modeling, experimental system identification and control scheme based on system identification are performed and finally sample surface is measured by home-built AFM with such a control scheme.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.87.1-87.1
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• 2016

The unique properties of 2D materials significantly rely on the atomic structure and defects. Thus study at atomic scale is crucial for in-depth understanding of 2D materials and provides insights into its future applications. Using aberration-corrected transmission electron microscopes, atomic resolution imaging of individual atoms has been achieved even at a low kV. Ongoing optimization of aberration correction improves the spatial resolution better than angstrom and moreover boosts the contrast of light atoms. I present the recent progress of the study on the atomic structure and defects of monolayer and multilayer graphene, hBN and MoS2. Furthermore, the defect formation mechanisms of graphene, hexagonal boron nitride and MoS2 are discussed.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.60-64
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• 2009

We attempted the first measurement of the spectral width of the nickel-like molybdenum x-ray laser (${\lambda}\;=\;18.895\;nm$) by use of a high-resolution spectrometer in order to determine the strength of the magnetic field required for the generation of a circularly polarized x-ray laser. The spectral width was measured to be ${\Delta}{\lambda}\;=\;18\;m{\AA}$ under the substantial lasing condition. The magnetic field required for the generation of a circularly polarized x-ray laser was 40 T. The splitting of the x-ray laser line was clearly obtained under 15 T external magnetic field. The strength of the magnetic field estimated from the splitting of the x-ray laser line was large compared with the external magnetic field. It implies that there might be an alternative mechanism for enhancement of the magnetic field in the gain medium plasma.

• Journal of Radiation Protection and Research
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• 제35권2호
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• 대한전자공학회논문지
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• 제26권8호
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• pp.1203-1210
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• 1989

A cross-sectional transmission electorn microscopy study of the MBE grown GaAs/Al0.3 Ga0.7As layers was carried out at high-resolution so that the atomic arrangement of the well, barrier and the interface could be understood on an atomic level. Results show that the images reveal directly the atomic structure of the GaAs, Al0.3Ga0.3 Ga0.7 As interface is sharply defined but is not smooth on the atomic scale. The roughness arises from the presence of hills with heights of several{002} GaAs interplanar spacings. The atomic arrangement at the interface is almost completely coherent without any structural disorder. Alloy clustering at the interface was not observed.