• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.

• Nuclear Engineering and Technology
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• v.56 no.4
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• pp.1244-1249
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• 2024

A combination of flow-accelerated corrosion (FAC) tests and corresponding computational fluid dynamics (CFD) tests were performed to determine the hydrodynamic parameters that could help predict the highly susceptible location to FAC in the elbow section. The accelerated FAC tests were performed on a specimen containing elbow sections fabricated using commercial 2-inch carbon steel pipe. The tests were conducted at flow rates of 9 m/s under the following conditions: water temperature of 150 ℃, dissolved oxygen <5 ppb, and pH 7. Thickness reduction of the specimen pipe due to FAC was measured using ultrasonic testing. CFD was conducted on the FAC test specimen, and the turbulence intensity, and shear stress were analyzed. Notably, the location of the maximum hydrodynamic parameters, that is, the wall shear stress and turbulent intensity, is also the same location with maximum FAC rate. Therefore, the shear stress and turbulence intensity can be used as hydrodynamic parameters that help predict the FAC-induced wall-thinning rate. The results provide a method to identify locations susceptible to FAC and can be useful for determining inspection priority in piping systems.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Composites Research
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• v.28 no.3
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• pp.130-135
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• 2015

This study investigates the property of graphene filled polymer nanocomposites in LEO(Low Earth orbit) environment conditions. In order to improve compatibility with polymer matrices and resistance of carbon material against AO(Atomic oxygen) attack, silanization of graphene oxide with organosilane was carried out. The corresponding moieties were characterized through X-ray photoelectron spectroscopy (XPS). Graphene oxide filled nanocomposites were prepared using solution based processing methods. The sets of specimen series were tested in an accelerated LEO simulated space environment facility. Graphene oxide and silane treated graphene oxide reinforced nanocomposites were compared with neat epoxy. The comparison revealed that the silane treated graphene filled polymer composite shows inherent resistance against atomic oxygen attack while the lack of silane treatment resulted in a reduction in performance.

• Journal of Radiation Protection and Research
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• v.36 no.3
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• pp.119-126
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• 2011

Mitochondrial DNA (mtDNA) deletion is a well-known marker for oxidative stress and aging, and contributes to harmful effects in cultured cells and animal tissues. mtDNA biogenesis genes (NRF-1, TFAM) are essential for the maintenance of mtDNA, as well as the transcription and replication of mitochondrial genomes. Considering that oxidative stress is known to affect mitochondrial biogenesis, we hypothesized that ionizing radiation (IR)-induced reactive oxygen species (ROS) causes mtDNA deletion by modulating the mitochondrial biogenesis, thereby leading to cellular senescence. Therefore, we examined the effects of IR on ROS levels, cellular senescence, mitochondrial biogenesis, and mtDNA deletion in IMR-90 human lung fibroblast cells. Young IMR-90 cells at population doubling (PD) 39 were irradiated at 4 or 8 Gy. Old cells at PD55, and H2O2-treated young cells at PD 39, were compared as a positive control. The IR increased the intracellular ROS level, senescence-associated ${\beta}$-galactosidase (SA-${\beta}$-gal) activity, and mtDNA common deletion (4977 bp), and it decreased the mRNA expression of NRF-1 and TFAM in IMR-90 cells. Similar results were also observed in old cells (PD 55) and $H_2O_2$-treated young cells. To confirm that a increase in ROS level is essential for mtDNA deletion and changes of mitochondrial biogenesis in irradiated cells, the effects of N-acetylcysteine (NAC) were examined. In irradiated and $H_2O_2$-treated cells, 5 mM NAC significantly attenuated the increases of ROS, mtDNA deletion, and SA-${\beta}$-gal activity, and recovered from decreased expressions of NRF-1 and TFAM mRNA. These results suggest that ROS is a key cause of IR-induced mtDNA deletion, and the suppression of the mitochondrial biogenesis gene may mediate this process.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.171-176
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• 1997

UO$_2$-Gd$_2$O$_3$fuel has been sintered to study the effect of powder property and sintering atmospheres on densification and microstructure. Three types of powders have been used; AUC-UO$_2$ powder and ADU-UO$_2$ powder were mixed with Gd$_2$O$_3$ Powder, and co-milled AUC-UO$_2$ and Gd$_2$O$_3$ powder. UO$_2$-(2, 5, 10)wt% Gd$_2$O$_3$pellets have been sintered at 168$0^{\circ}C$ for 4 hours in the mixture of H$_2$ and $CO_2$ gases, of which oxygen potential has been controlled by the ratio of $CO_2$ to H$_2$ gas. Densities of UO$_2$-Gd$_2$O$_3$ fuel pellets are quite dependent on powder types, and UO$_2$-Gd$_2$O$_3$ fuel using co-milled UO$_2$ powder yields the highest density. A long range homogeneity of Gd is determined by powder mixing. As the oxygen potential of sintered atmosphere increases, the sintered densities of UO$_2$-Gd$_2$O$_3$ pellets decrease but grain size increases. In addition, (U, Gd)O$_2$ solid solution becomes more homogeneous. The UO$_2$-Gd$_2$O$_3$fuel having adequate density and homogeneous microstructure can be fabricated by co-milling powder and by high oxygen potential.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.261-266
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• 2003

We investigated the effect of oxygen plasma treatment of indium-tin oxide(ITO) surface on the performance of electroluminescence(EL) devices. ITO surface treated oxygen plasma has been analyzed using atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS), to investigate the relations between the properties of the ITO surface and the properties of the current-voltage-luminance(I-V-L) characteristics of the fabricated OLED with the structure of ITO(plasma treatment) / TPD / Alq$_3$/ Al. It is found that the oxygen plasma treatment of ITO anode improve the hole injection of the OLED due to the modification of the surface states. The treated ITO anode nay be low voltage with high luminance efficiency.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.112-115
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• 2017

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.6
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• pp.241-245
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• 2003

ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.385-385
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different oxygen concentration. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was in the range of 100-400 nm. AFM images show that the surface morphology was depended on the oxygen ratio. The crystal structure of copper oxide films was changed from metallic copper to copper oxide with increasing oxygen concentration. The oxidation states of Cu 2p and O 1s resulted from XPS were consistent with XRD results.