• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.464-468
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• 2003

The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3312-3316
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• 2013

Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.

• The Korean Journal of Ecology
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• 제26권2호
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• pp.87-89
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• 2003

Although a forest damage of large area due to air pollution has not yet been found in Korea, declines of Korean red pine (Pinus densiflora Sieb. et Zucc.), the most common coniferous species, have been locally reported. To evaluate the effect of air pollution and acid deposition on the forests, SO$_2$ concentration, acid load, soil pH and tree decline were monitored for 13 years from 1988 to 2001 in Namsan, Doowang and Gyebangsan with the gradient of air pollution. During the study period, annual mean SO$_2$ concentration in Namsan, Doowang and Gyebangsan were 14 ppb, 13 ppb and 6 ppb, respectively. Annual mean acid loads in Namsan and Doowang were three to four times more than that in Gyebangsan. As respected, forest surface soils in Namsan and Doowang were acidified to pH 4.1 and 4.3, whereas that in Gyebangsan showed normal value as pH 5.4. On the other hand, decline degrees of Korean red pines in Namsan and Doowang in both 1996 and 2001 were higher than those in Gyebangsan. It is reasonable that the severer tree declines in Namsan and Doowang could be closely related with the higher air pollution, acid load, and the effects (possibly Ca deficit and Al toxicity) of soil acidification.

• 한국결정성장학회지
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• 제9권3호
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.78-79
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• 2008

In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

• 한국환경보건학회지
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• 제33권3호
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• pp.180-183
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• 2007

Over the last century the mercury (Hg) concentration in the environment has been increased by human activities with inputs from sources such as atmospheric deposition, urban runoff, and industrial effluents. Mercury can be transformed to methylmercury (MeHg) in anaerobic conditions by sulfate reducing bacteria (SRB) and sediments are the principal location for MeHg production in aquatic environments. Interest in bioaccumulation of Hg and MeHg into lower trophic levels of benthic and pelagic organisms stems from public health concerns as these organisms provide essential links for higher trophic levels of food chains such as fish and larger invertebrates. Fish consumption is the major exposure route of MeHg to humans. Recently, it was reported that blood samples in Korea showed much higher Hg levels (5-8 times) than those in USA and Germany. Although this brings much attention to Hg research in Korea, there are very few studies on Hg biogeochemical cycling and bioaccumulation in aquatic environments. Given the importance of Hg methylation and MeHg transfer through food chains in aquatic environments, it is imperative that studies should be done in much detail looking at the fate, transport, and bioaccumulation of Hg and MeHg in the environment. Moreover, there should be long-term monitoring plans in Korea to evaluate the environmental and health effects of Hg and MeHg.

• 전기전자학회논문지
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• 제21권1호
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• pp.85-88
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• 2017

본 연구에서는 OLED 소자 및 패시베이션 박막을 하나의 시스템에서 동시에 제작하여 진행할 수 있는 in-situ passivation 클러스터 시스템을 개발하고 이러한 시스템을 이용하여 OLED 디스플레이 제작 및 특성을 연구함으로써 플렉시블 디스플레이에 적용할 수 있는 기술을 구현하였다. In-situ passivation을 이용한 OLED의 제작 및 특성 분석에 관하여 연구하여 다음과 같은 결과를 얻었다. 첫째, In-situ 시스템으로 OLED 소자 제작 및 박막 패시베이션 가능한 시스템을 자체적으로 구축하였으며, 패시베이션 박막을 제작하여 그 특성을 평가한 결과 본 시스템의 응용 가능성을 제시할 수 있었다. 둘째, $SiO_2$, SiNx 무기 박막을 PECVD 방법으로 제작하여 OLED 패시베이션 박막으로 적용 가능성을 확인하였다. 본 연구결과, in-situ passivation 시스템의 적용 가능성을 확인할 수 있었고, 플렉시블 디스플레이에 적합한 패시베이션 방법으로서의 구현 가능성을 제시하였다.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• 대한화장품학회지
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• 제47권3호
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• pp.185-191
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• 2021

환경오염은 인간의 건강, 삶의 질 또는 생태계의 자연적 기능을 방해하는 물질로 지구 환경을 오염시키는 것으로 정의된다. 환경 스트레스 요인에 장기간 반복적으로 노출되면 피부의 정상적인 방어 잠재력을 초과할 때마다 피부 장벽 기능에 장애가 생겨 다양한 피부 질환이 발병하게 된다. 피부에 영향을 미치는 주요 대기오염물질은 다환 방향족 탄화수소, 휘발성 유기화합물, 질소산화물, 미세먼지, 담배 연기, 중금속, 비소 등이다. 이들 물질의 피부 흡수는 피부 표면의 대기오염물질의 침적, 표피 지질 구성, 표피를 통한 혈관 확산에 의해 이루어진다.