• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.464-468
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• 2003

The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3312-3316
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• 2013

Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.

• The Korean Journal of Ecology
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• v.26 no.2
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• pp.87-89
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• 2003

Although a forest damage of large area due to air pollution has not yet been found in Korea, declines of Korean red pine (Pinus densiflora Sieb. et Zucc.), the most common coniferous species, have been locally reported. To evaluate the effect of air pollution and acid deposition on the forests, SO$_2$ concentration, acid load, soil pH and tree decline were monitored for 13 years from 1988 to 2001 in Namsan, Doowang and Gyebangsan with the gradient of air pollution. During the study period, annual mean SO$_2$ concentration in Namsan, Doowang and Gyebangsan were 14 ppb, 13 ppb and 6 ppb, respectively. Annual mean acid loads in Namsan and Doowang were three to four times more than that in Gyebangsan. As respected, forest surface soils in Namsan and Doowang were acidified to pH 4.1 and 4.3, whereas that in Gyebangsan showed normal value as pH 5.4. On the other hand, decline degrees of Korean red pines in Namsan and Doowang in both 1996 and 2001 were higher than those in Gyebangsan. It is reasonable that the severer tree declines in Namsan and Doowang could be closely related with the higher air pollution, acid load, and the effects (possibly Ca deficit and Al toxicity) of soil acidification.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.78-79
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• 2008

In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

• Journal of Environmental Health Sciences
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• v.33 no.3
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• pp.180-183
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• 2007

Over the last century the mercury (Hg) concentration in the environment has been increased by human activities with inputs from sources such as atmospheric deposition, urban runoff, and industrial effluents. Mercury can be transformed to methylmercury (MeHg) in anaerobic conditions by sulfate reducing bacteria (SRB) and sediments are the principal location for MeHg production in aquatic environments. Interest in bioaccumulation of Hg and MeHg into lower trophic levels of benthic and pelagic organisms stems from public health concerns as these organisms provide essential links for higher trophic levels of food chains such as fish and larger invertebrates. Fish consumption is the major exposure route of MeHg to humans. Recently, it was reported that blood samples in Korea showed much higher Hg levels (5-8 times) than those in USA and Germany. Although this brings much attention to Hg research in Korea, there are very few studies on Hg biogeochemical cycling and bioaccumulation in aquatic environments. Given the importance of Hg methylation and MeHg transfer through food chains in aquatic environments, it is imperative that studies should be done in much detail looking at the fate, transport, and bioaccumulation of Hg and MeHg in the environment. Moreover, there should be long-term monitoring plans in Korea to evaluate the environmental and health effects of Hg and MeHg.

• Journal of IKEEE
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• v.21 no.1
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• pp.85-88
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• 2017

This study focused on the development of in-situ passivation system and characterization of OLED display. The thin film passivation process with thin film layers was investigated using in-situ passivation technique in the cluster system. Thin films of $SiO_2$, SiNx passivation were manufactured using PECVD, which enables the deposition process at room temperature. The cluster system was created to develop in-situ passivation process, which OLED and thin film were fabricated in the cluster system without exposing to the atmospheric environment. It is expected that the in-situ passivation system of OLED with organic and inorganic layer provides the leading technique to develop flexible OLED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.47 no.3
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• pp.185-191
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• 2021

Environmental pollution is defined as contamination of the earth's environment with materials which interfere with human health, quality of life, or the natural functioning of the ecosystem. Whenever a prolonged and repetitive exposure to environmental stressors exceeds the skin's normal defensive potential, there is a disturbance in the skin barrier function leading to the development of various skin diseases. Major air pollutants which affect the skin are polycyclic aromatic hydrocarbons, volatile organic compounds, nitrogen oxides, particulate matter, cigarette smoke, heavy metals and arsenic. Dermal uptake depends on the deposition of air pollutants on the skin surface, the composition of epidermal lipids, and the diffusion through the epidermis to the blood vessels.