• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.134-135
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• 2007

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

• Korean Journal of Remote Sensing
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• v.35 no.6_3
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• pp.1221-1233
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• 2019

Estimating damage in each sector that can be caused by volcanic ash deposition, is very important to prepare the volcanic ash disaster. In this study, we showed predicted-Korean-volcanic-ash damage of each sector by using volcanic ash diffusion simulation and spatial-data-based volcanic ash damage sector in previous study. To this end, volcanic ash related base maps were generated by collecting and processing spatial information data. Finally, we showed Korean-volcanic-ash-deposition damages by sector using the collected Mt. Aso volcanic ash scenarios via overlapping analysis. As a result, volcanic-ash-related damages were expected to occur in the 162 and 134 districts for each Aso volcanic ash scenarios, since those districts exceeds the minimum volcanic ash damage criterion of 0.01 mm. Finally, we compared possible volcanic ash damages by sectors using collected and processed spatial data, after selecting administrative districts(Scenario 190805- Kangwon-do, Kyungsangbuk-do; Scenario 190811-Chuncheon-si, Hongcheon-si) with the largest amount of volcanic ash deposition.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.4
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• pp.775-784
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• 2000

Nitrate dry deposition fluxes were directly measured using knife-leading-edge surrogate surface (KSS) covered with greased strips and a water surface sampler (WSS). The average gaseous flux ($8.3mg/m^2/day$) was much higher than the average particulate one ($3.0mg/m^2/day$). The best fit gas phase mass transfer coefficient (MTC) of $HNO_3$ was obtained by linear regression analysis between measured gaseous flux containing nitrogen compounds and measured ambient $HNO_3$ concentration. The result showed that the MTCs of $HNO_3$ were approximately two times higher than those of $SO_2$. Especially, during the ozone action day, measured gaseous fluxes containing nitrogen compounds were much higher than those ones calculated as the product of measured ambient $HNO_3$ concentration and gas phase MTC of $HNO_3$, which is calculated from MTC of $SO_2$ using Graham's diffusion law. This result indicated that other nitrogen compounds except $HNO_3$ contributed to gaseous flux containing nitrogen compounds into the water surface sampler. The theoretical calculations suggest the contributions of nitrous acid ($HNO_2$) and PAN to the gaseous dry deposition flux of nitrogen containing compounds to the WSS.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Journal of Korean Society of Forest Science
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• v.85 no.1
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• pp.84-95
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• 1996

Environmental pollution has recently been progressed in the metropolitan and industrial areas of Korea and concerns have been evolved against the chronic effects of the pollution on natural ecosystem. This study was carried out to investigate the environmental pollution impacts on ion input into forest ecosystems and soil environmental changes. Study plots were established at Seoul, Ulsan, Yeochon, and Seosan for pollution sites and at Pyungchang for a non-pollution site. Atmospheric deposition was measured with rain, throughfall, and stem flow samples collected in the forest areas. Soil chemical properties were investigated to compare the pollution impacts on the sites. Precipitation acidity in the metropolitan and industrial areas ranged from pH 4.5 to 5.5, showing the levels lower than pH 5.8 of mountain area. Ion concentrations in the precipitation had increased significantly while passing the crown layer in the metropolitan and industrial areas, showing the increase by 4 times at the maximum. Total ion input in the metropolitan and industrial areas was greater than that in mountain area by approximately 2-3 times. Soil acidification caused by acidic ion input seemed to be greatest at Seoul, showing pH 1 decrease compared to that of Pyungchang. Soil canon contents were relatively high in the metropolitan and industrial areas. Although the canon leaching loss was not apparent, soil acidification process seemed to be continued by acidic ion input. Environmental pollution in the metropolitan and industrial areas exerted changes in ion input into the forest ecosystems and soil conditions. The chronic effects of environmental pollution should be monitored and investigated further to explain the processes of ecosystem change and the impacts on plant growth.

• Ecology and Resilient Infrastructure
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• v.9 no.1
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• pp.77-82
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• 2022

This study aims to understand how mobile and stationary air pollution sources affect the air quality and soil properties in urban parks. We selected three sites of urban parks in Seoul as follows: Ha-neul Park in Mapo-gu (Site_M), Ill-won Eco-Park in Gangnam-gu (Site_G), and Yangjae Citizen's Forest in Seocho-gu (Site_Y), and compared the results of each site's traffic volume, air quality concentration, and soil analysis. Traffic volume was high in Site_M, followed by Site_G and Y; Site_M and G were closer to the resource recovery facility than Site_Y. Hence, we hypothesized that PM and NO₂ concentrations in the atmosphere were higher in Site_M than Site_G and Y, causing different soil nitrogen content among sites due to different atmospheric deposition. Consistent with our hypothesis, the concentrations of PM2.5 and NO₂ were higher in Site_M and G than Site_Y, while Site_Y had higher PM10 than other sites. The soil NO₃^- contents showed no significant difference among three sites, whereas the soil NH₄+ content was extremely high in Site_Y. This high content of soil NH₄⁺ is thought to be due to acidification from excessive fertilization. Lower soil pH of Site_Y further supported the evidence of heavy fertilization in this site. Overall nitrogen dynamics implies that soil nitrogen status is more influenced by park management such as fertilization rather than atmospheric deposition. Despite of lower soil NH₄⁺ content of Site_M and G than Y, vegetation vitality looked similar among three sites. This indirectly indicates that excessive fertilizer input in urban park management needs to be reconsidered. This study showed that even if the air quality was different due to mobile and stationary sources, it did not directly affect the soil nitrogen nutrient status of the adjacent urban park.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.38.2-38.2
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• 2011

폴리머 박막은 그 고유한 특성으로 인해 여러 산업적으로 널리 사용되고 있는 재료이다 예로 의약품이나 식품 포장지의 배리어, 전자부품의 절연체, 반도체 공정에서의 사용, 혹은 부식방지를 위해 사용 되어지기도 한다. 이 폴리머 박막을 증착 하기 위한 방법으로 이전부터 CVD (Chemical Vapor Deposition) 방법이 많이 사용되었고 지금까지도 가장 많이 사용되는 방법이다. CVD를 사용하여 $SiO_2$-like 필름의 증착은 전구체(precursor)로 Silane ($SiH_4$)을 사용하였으며, 플라즈마 발생 소스(source)로 열 혹은 전기장 등을 사용 하며 공정 시 압력 또한 대부분 저압 하에서 실시 하였다. 이와 같은 이전 CVD 방법의 문제는 사용되는 Silane 자체가 인체에 해로울 정도로 독성이 있으며 폭발성도 같이 가지고 있어 작업환경의 위험성이 높으며 열을 사용한 CVD의 경우 높은 공정 온도로 인해 증착 할 수 있는 대상이 제한 되어 지며 높은 열의 발생을 위해 많은 에너지의 소비가 필요하다. 저압 플라즈마를 사용한 CVD 는 공정상 높은 열의 발생이 일어나지 않아 기판 운용상 문제가 되지 않지만 저압 환경에서 해당 공정이 이루어기 때문에 인해 필수적으로 고가의 진공 챔버가 필수적이며 저압을 유지할 고가의 진공 펌프나 추가 장비들이 필요하게 된다, 또한 챔버 내에서 이루어지는 공정으로 인해 공정의 연속성이 떨어져 시잔비용 또한 많이 잡아 먹는다. 이러한 열 혹은 저압 플라즈마등을 사용한 공정의 단점을 해결하기 위해 여러 연구자들이 다양한 방법을 통해 연구를 하였다. 대기압 유전체 배리어 방전(AP-DBD: Atmospheric Pressure-Dielectric Barrier Discharge)을 사용한 폴리머 박막의 증착은 이전 전통적인 방법에 비해 낮은 장비 가격과 낮은 공정 온도 그리고 연속적인 공정 등의 장점이 있는 폴리머 박막 증착 방법 이다. 대기압 유전체 배리어 방전 공정 변수로 공급 전압 및 주파수 그리고 공급 전압의 영향, 전구체를 유전체 배리어 방전 전극으로 이동 시키기 위해 사용된 캐리어 가스의 종류 및 유량, 화학양론적 계수를 맞추기 위해 같이 포함되는 산소 가스의 유량, DBD 전극의 형태에 따른 증착 박막의 균일성 등 이 존재하며 이런 많은 변수 들에 대한 연구가 진행 되었지만 아직 이 대기압 DBD를 이용한 폴리머 박막의 증착에 대한 명확한 이해는 아직 완전 하다 할 수 없다. 본 연구에서는 이러한 대기압 DBD를 이용하여 폴리머 박막의 증착시 영향을 미치는 많은 공정 변수 등이 박막생성에 미치는 영향과 증착된 박막의 성질에 대한 연구를 진행 하였다.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.381-396
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• 2004

In order to understand the precipitation acidity and chemical composition of ion species in Iksan area as well as to know the difference of chemical characteristics in precipitation samples from the viewpoint of precipitation sampling method, precipitation samples were collected by wet-only automatic precipitation sampler and bulk manual precipitation sampler in Iksan, from March 2003 to August 2003. The mean pH of precipitation was 5.0. There was a little significant difference in the mean value of pH between automatic and manual sampler. However, pH values of some precipitation samples were lower in automatic sampler than in manual sampler, especially in case of precipitation samples with small rainfall for March 2003. The mean concentrations of each ions in precipitation were generally a little higher in precipitation samples collected by the manual sampler than in those collected by the automatic sampler because of accumulation of dry deposition on the surface of glass funnel installed at the manual sampler during the sampling period or no rainfall. Dominant species determining the acidity of precipitation, were N $H_4$$^{[-10]}$ and nss-C $a^{2+}$ for cations and nss-S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ for anions. The mean concentration of N $H_4$$^{+}$ and nss-C $a^{2+}$ were 31 $\mu$eq/L and 9 $\mu$eq/L for the automatic sampler and 40 ueq/L and 16 ueq/L for the manual sampler, respectively. In addition, nss-S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ were 27 $\mu$eq/L and 13 $\mu$eq/L for the automatic sampler and 32 $\mu$eq/L and 17 $\mu$eq/L for the manual sampler, respectively. Although the concentrations of the acidifying ions of nss-S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ were about 3 times higher than those for foreign pristine sites, precipitation acidity were estimated to be natural due to the neutralization reaction of the alkaline species of N $H_4$$^{+}$ and nss-C $a^{2+}$ with its higher concentrations. Considering the ratios of nss-S $O_4$$^{2-}$/N $O_4$$^{[-10]}$ nss-S $O_4$$^{2-}$, it was found that ammonium sulphate was dominant in Iksan precipitation. The major non-sea salt ions were maximum concentrations for March, but decreased with increasing of precipitation amount.on amount.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.