• Title/Summary/Keyword: Atmosphere temperature

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A Study on the Wear Characteristics of Aluminizing Steel ( 1 ) - Wear in Run-in Period on Rolling-Sliding Contact - (알루미나이징 강의 마모특성에 관한 연구 ( 1 ) - Rolling-Sliding 마찰의 초기마모영역을 중심으로 -)

  • 이규용
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.14 no.2
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    • pp.69-78
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    • 1978
  • It is well known that the aluminizing steel is excellent in corrosion resistance and heat resistance. Therefore it has been used as boiler parts, heat exchanger parts and guide rails which are used under comparatively simple conditions. Recently, it has been noticed that aluminizing steel has high resistance to various atmosphere, high temperature oxidation and seawater resistance. So its usage has been extended widely to the production of parts such as intake and exhaust valve of internal combustion engine, turbine blade and pipelines On ships which required such properties. It is considered that aluminium coated steel is excellent in wear resistance because of high hardness on main ingredient FezAIs of Fe-AI alloy layer existed in diffusion coating layer. And it will beused as a new material taking wear resitance with seawater resistance in marine field. However it is difficult to findout any report concering the wear behaviors or properties of alum in izing steel. In this study the experiment was carried out under the condition of rolling-sliding contact using an Amsler-type wear testing machine at 0.80, 0.91, 1. 10, 1. 25% of slip ratio and 55.43, 78.38, 110.85 kg/mm^2 of Hertz's contact stress in run-in period for the purpose of service-ability test of aluminizing steel as a wear resisting material and obtaining the available design data. The followings are the obtained results from the experimen tal study; 1) The 2nd diffusion material has most excellent wear resistance. This material has brought out about 18% decrease of wear weight in a lower friction load level and 40~G decrease in a higher level comparing to the raw material. 2) Satisfactory effect of wear resistivity cannot be much expected in 2nd diffusion specimens. This is considered due to the formation of fine void in the alloy layer near the boundary to the aluminium layer. 3) Fracture on friction surface of aluminizing steel by the rolling-sliding contact is spalling, and spalling crack occurres initially beneath the specimen surface near the boundary in diffusion coating layer.

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Effects of Pressure Assisted Freezing on Physicochemical Properties of Pork (Pressure Assisted Freezing이 돈육의 이화학적 특성에 미치는 효과)

  • Hong, Geun-Pyo;Ko, Se-Hee;Choi, Mi-Jung;Min, Sang-Gi
    • Food Science of Animal Resources
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    • v.27 no.2
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    • pp.190-196
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    • 2007
  • This study was carried out to investigate the effects of pressure assisted freezing(PAF) on physicochemical properties of pork meat. Pork meat was frozen under pressure up to 200 MPa at $-60^{\circ}C$, and compared with fresh control. Phase transition temperature decreased with increasing pressure level, while pressure level had no effect on supercooling extent. Increasing pressure level increased pH of meat significantly(p<0.05). Thawing losses of all treatments were significantly higher(p<0.05) than control with the exception of PAF at 200 MPa. Water holding capacity(WHC) was increased significantly(p<0.05) with increasing pressure level up to 100 MPa. Cooking loss tended to decrease with increasing pressure level. In color, CIE $L^*-\;and\;b^*-value$ increased with increasing pressure level, while CIE $a^*-value$ decreased significantly(p<0.05). Increasing pressure level up to 150 MPa increased shear force significantly(p<0.05), however, no significant difference between 150 and 200 MPa in shear force was found(p>0.05). Therefore, the results indicated that excessive pressure level in PAF caused several losses in meat qualities, while PAF at mild pressure level improved meat qualities compared to atmosphere freezing.

Characterization of Ni-YSZ cermet anode for SOFC prepared by glycine nitrate process (Glycine nitrate process에 의한 제조된 SOFC anode용 Ni-YSZ cermet의 물성)

  • Lee, Tae-Suk;Ko, Jung-Hoon;Lee, Kang-Sik;Kim, Bok-Hee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.1
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    • pp.21-26
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    • 2011
  • Ni-YSZ (Yttria Stabilized Zirconia) composite powders were fabricated by glycine nitrate process. The prepared powders were sintered at $1300{\sim}1400^{\circ}C$ for 4 h in air and reduced at $1000^{\circ}C$ for 2 h in a nitrogen and hydrogen atmosphere. The microstructure, electrical conductivity, thermal expansion and mechanical properties of the Ni-YSZ cermets have been investigated with respect to the volume contents of Ni. A porous microstructure consisting of homogeneously distributed Ni and YSZ phases together with well-connected grains was observed. It was found that the open porosity, electrical conductivity, thermal expansion and bending strength of the cermets are sensitive to the volume content of Ni. The Ni-YSZ cermet containing 40 vol% Ni was ascertained to be the optimum composition. This composition offers sufficient open porosity of more than 30 %, superior electrical conductivities of 917.4 S/cm at $1000^{\circ}C$ and a moderate average thermal expansion coefficient of $12.6{\times}10^{-6}^{\circ}C^{-1}$ between room temperature and $1000^{\circ}C$.

Evaluation on Thermal Performance of Thermosyphon by Numerical Analysis (열사이펀의 열성능 산정을 위한 수치해석 연구)

  • Jang, Changkyu;Choi, Changho;Lee, Jangguen;Lee, Chulho
    • Journal of the Korean Geotechnical Society
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    • v.30 no.9
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    • pp.57-66
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    • 2014
  • The ground in cold region consists of active and permafrost layers. The active layer at the unstable state may cause ground corrosion and uplift, when the temperature of frozen ground increases due to seasonal changes. The thermosyphon is one of the stabilization methods to maintain the ground stability in the frozen ground. The thermosyphon is a closed two-phase convection device that extracts heat from the ground and discharges it into the atmosphere. In this study, ground freezing experiment using a thermosyphon and simulated ground with the isolation material was conducted to evaluate the thermal performance of the thermosyphon. In order to consider the thermal performance of the thermosyphon, commercial numerical program (TEMP/W) was adopted. Likewise, the thermal performance of thermosyphon and thermal properties of ground were applied in the numerical model. In a series of comparisons with experiment results and numerical study, thermal performance of thermosyphon can be evaluated.

Electrochemical properties of heat-treated multi-walled carbon nanotubes (열처리된 탄소나노튜브 상대전극의 전기화학적 특성 연구)

  • Lee, S.K.;Moon, J.H.;Hwang, S.H.;Kim, G.C.;Lee, D.Y.;Kim, D.H.;Jeon, M.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.67-72
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    • 2008
  • We have studied the effect of heat treatment of multi-walled carbon nanotubes (MWNTs) as a counter electrode on the electro-chemical properties of dye-snsitized solar cells. MWNTs on the p-type Si substrate were synthesized by thermal chemical vapor deposition (CVD) using Fe catalysts. We prepared the two types of MWNTs samples with the different diameters. The rapid thermal annealing (RTA) treatment for the MWNTs was carried out at the growth temperature ($900^{\circ}C$) for 1 minute with $N_2$ gas atmosphere. The structural, electrical and electrochemical properties of MWNTs were investigated by field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy, 2-point probe station and electrochemical impedance spectroscopy (EIS). The I(D)/I(G) ratio of heat-treated MWNTs in Raman spectra was considerably decreased. It was also found that the heat-treated MWNTs showed better redox reaction of iodide at the interface between MWNTs surface and electrolyte than that of as-grown MWNTs. The redox resistance value of heat-treated electrodes was measured to be much lower than that of as-grown electrode at the interface. As a result, the counter electrode using the heat-treated MWNTs showed better electrochemical properties.

Effects of Poly(Styrene-Co-Maleic acid) as Adhesion Promoter on Rheology of Aqueous Cu Nanoparticle Ink and Adhesion of Printed Cu Pattern on Polyimid Film (수계 Cu 나노입자 잉크에서 Poly(styrene-co-maleic acid) 접착 증진제가 잉크 레올로지와 인쇄패턴의 접착력에 미치는 영향)

  • Jo, Yejin;Seo, Yeong-Hui;Jeong, Sunho;Choi, Youngmin;Kim, Eui Duk;Oh, Seok Heon;Ryu, Beyong-Hwan
    • Korean Journal of Materials Research
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    • v.25 no.12
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    • pp.719-726
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    • 2015
  • For a decade, solution-processed functional materials and various printing technologies have attracted increasingly the significant interest in realizing low-cost flexible electronics. In this study, Cu nanoparticles are synthesized via the chemical reduction of Cu ions under inert atmosphere. To prevent interparticle agglomeration and surface oxidation, oleic acid is incorporated as a surface capping molecule and hydrazine is used as a reducing agent. To endow water-compatibility, the surface of synthesized Cu nanoparticles is modified by a mixture of carboxyl-terminated anionic polyelectrolyte and polyoxylethylene oleylamine ether. For reducing the surface tension and the evaporation rate of aqueous Cu nanoparticle inks, the solvent composition of Cu nanoparticle ink is designed as DI water:2-methoxy ethanol:glycerol:ethylene glycol = 50:20:5:25 wt%. The effects of poly(styrene-co-maleic acid) as an adhesion promoter(AP) on rheology of aqueous Cu nanoparticle inks and adhesion of Cu pattern printed on polyimid films are investigated. The 40 wt% aqueous Cu nanoparticle inks with 0.5 wt% of Poly(styrene-co-maleic acid) show the "Newtonian flow" and has a low viscosity under $10mPa{\cdots}S$, which is applicable to inkjet printing. The Cu patterns with a linewidth of $50{\sim}60{\mu}m$ are successfully fabricated. With the addition of Poly(styrene-co-maleic acid), the adhesion of printed Cu patterns on polyimid films is superior to those of patterns prepared from Poly(styrene-co-maleic acid)-free inks. The resistivities of Cu films are measured to be $10{\sim}15{\mu}{\Omega}{\cdot}cm$ at annealing temperature of $300^{\circ}C$.

The Effect of Thermal Annealing for CuGaSe$_2$ Single Crystal Thin Film Grown by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법으로 성장된 CuGaSe$_2$ 단결정 박막 성장의 열처리 효과)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.352-356
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    • 2003
  • A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

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Growth and photoluminescience propeties for $CuInSe_2$ single crystal thin film by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 $CuInSe_2$ 단결정 박막 성장과 점결함)

  • Hong, Kwang-Joon;Lee, Sang-Youl;Kim, Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.111-112
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    • 2005
  • To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

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Thermoelectric properties of SiC prepared by refined diatomite (정제 규조토로 합성한 탄화규소의 열전특성)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.4
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    • pp.596-601
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    • 2020
  • Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO2 in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

Vegetation Water Status Monitoring around China and Mongolia Desert using Satellite Data (위성자료를 이용한 중국과 몽골 사막주변의 식생수분상태 모니터링)

  • Lee, Ga-Lam;Kim, Young-Seup;Han, Kyoung-Soo;Lee, Chang-Suk;Yeom, Jong-Min
    • Journal of the Korean Association of Geographic Information Studies
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    • v.11 no.4
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    • pp.94-100
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    • 2008
  • Recently, global warming for climate system is a crucial issue over the world and it brings about severe climate change, abnormal temperature, a downpour, a drought, and so on. Especially, a drought over the earth surface accelerates desertification which has been advanced over the several years mainly originated from a climatic change. The objective of this study is to detect variation of vegetation water condition around China and Mongolia desert by using satellite data having advantage in observing surface biological system. In this study, we use SPOT/VEGETATION satellite image to calculate NDWI (Normalized Difference Water Index) around study area desert for monitoring of status of vegetation characteristics. The vegetation water status index from remotely sensing data is related to desertification since dry vegetation is apt to desertify. We can infer vegetation water status using NDWI acquired by NIR (Near infrared) and SWIR (Short wave infrared) bands from SPOT/VGT. The consequence is that NDWI decreased around desert from 1999 to 2006. The areas that NDWI was decreased are located in the northeast of Mongolian Gobi desert and the southeast of China Taklamakan desert.

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