• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.269-278
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• 1991

Fine AlN powder was synthesized by carbothermal reduction and nitridation of alumimun hydroxide prepared from Al-isopropoxide. AlN ceramics with Y2O3 and CaO were prepared by hot-pressing under the pressure of 30 MPa at 180$0^{\circ}C$ for 1 h in N2 atmosphere. Grain boundary behavior and purification mechanism of AlN lattice were examined by heat treatment of AlN ceramics at 185$0^{\circ}C$ for 1-6 h in N2 atmosphere. AlN ceramics without sintering additives showed poor sinterability. However, Y2O3-doped and CaO-doped AlN ceramics were fully densified nearly to theoretical density. As the heat treatment time increased, c-axis lattice parameter increased. This is attributed to the removal of Al2O3 in AlN lattice. This purification effect of AlN attice depended upon the quantity of secondary oxide phase in the inintial stage of heat treatment and the heat treatment time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.714-718
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• 2003

Usually for the commercial preparation of barium titanate films or ceramics the reaction atmosphere must be preferably in air. However, normally air is not used because it contains carbon dioxide, which can easily react with barium to form the undesired product barium carbonate, leading to unwanted second-phase formation in the (mal stages of the process. In the present work a series of perovskite barium titanate films was prepared by the sol-gel method, using a metal alkoxide solutions in the electrophoretic deposition (EPD). The influence of several process parameters, like sintering temperature of sol preparation before EPD and heat-treatment temperature and non-oxidized atmosphere, on the film properties is described.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.390-398
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• 1991

$\beta$-Sialon powder was prepared from Wando pyrophyllite by the carbothermic reduction and nitridation at 135$0^{\circ}C$ for 10 h nitrogen atmosphere. Amorphous silica prepared from Si(OC2H5)4 was added to Wando pyrophyllite powder in order to control the final Z value. Two different methods were applied for synthesis of $\beta$-sialon powders. In Process A, the amorphous silica prepared from Si(OC2H5)4 was admixed to Wando pyrophyllite powder. Process B was started from the mixture of Wando Y2O3 was added to the synthesized $\beta$-Sialon powders as a sintering aid, and the mixed powders were hot pressed at 175$0^{\circ}C$ for 120 min in nitrogen atmosphere under 30 MPa. Their mechanical properties were compared. The maximum values of M.O.R., hardness and KIC were 667 MPa, 16 GPa and 6.3 MN/m3/2, respectively, and they are the values obtained form $\beta$-Sialon ceramics prepared by process A of Z=0.5.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.402-408
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• 1989

$\beta$-Sialon powder was synthesized by the simultaneous reduction and nitridation of the mixed powder of Hadong kaolin and Kimcheon quartzite, using graphite as a reducing agent. The synthesized $\beta$-Sialon powder (Z=1) was hot-pressed at 175$0^{\circ}C$, for 90min under 30MPa in N2 atmosphere, after Yttria and YAG composition material were added as sintering agents. The effects of grain-boundary crystallization on high-temperature mechanical properties of $\beta$-Sialon ceramics were investigated. Strength degradation was observed at above 1,00$0^{\circ}C$ for the $\beta$-Sialon (Z=1)-8wt% Y2O3 composition, but it was not observed up to 1,20$0^{\circ}C$ for the $\beta$-Sialon-8wt% YAG composition which was annealed at 1,40$0^{\circ}C$ for 4 hours in N2 atmosphere. After the $\beta$-Sialon-8wt% YAG composition was annealed, the decrease of fracture toughness was observed.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.741-746
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• 1990

Dielectrics which do not lose their high insulation resistance in reducing atmosphere are necessary for multilayer ceramic capacitors with Ni internal electrode. In this study we investigated the Ca ion site occupancy in A-site excess Ca-doped BaTiO3 by measuring the insulation resistance, lattice constant and Curie temperature. Its Curie temperature, which was lower than that of the pure BaTiO3, was more lowered by sintering in reducing atmosphere. Lattice constnat of c-axis decreased and that of a-axis increased, suggesting substitution of Ca ions for Ti ions. Hence CaTi" acts as an acceptor to maintain high insulation resistance.ance.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.330-335
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• 2009

We investigated the effects of the re-oxidation temperature and time on the positive temperature coefficient (PTC) of resistivity characteristics of Sm-doped $BaTiO_3$ sintered at $1200{\sim}1260^{\circ}C$ for 2 h in a reducing atmosphere (3% $H_2/N_2$), followed by re-oxidization processes in air, in which re-oxidization temperature and time were $600{\sim}1000^{\circ}C$ and $1{\sim}10$h, respectively. The result reveals that Smdoped (Ba,Ca)$TiO_3$ ceramics fired in a reducing atmosphere exhibit low PTC characteristics, whereas the sample re-oxidized at $800^{\circ}C$ for 1 h in air exhibit pronounced PTC characteristics. The room-temperature resistivity and jumping characteristics of resistivity (${\rho}_{max}/{\rho}25^{\circ}C$) decrease with Sm contents. The PTC characteristics with reoxidization time at $800^{\circ}C$ have improved about $2{\sim}3$ orders of magnitude whereas differed according to the sintering temperature. The 0.7 at% Sm-doped (Ba,Ca)$TiO_3$ samples reveal the best PTC characteristics in the present range of formula and processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.251-254
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• 1998

The ($0.8BaTiO_3-0.1SrTiO_3-0.1MgTiO_3$)+$0.006Nb_2O_5$ ceramics were fabricated by conventional ceramic process. The dielectric property of specimen was investigated that the specimen was sintering temperature at 1,300C for 3hours and then annealed at $1,100^{\circ}C$ for 3hours in a atmosphere (air) to be painted on the surface with CuO paste. The results of the temperature and frequency are varied, the dielectric constant and loss tangent are unsuitable for BL capacitor. The dielectric constants were varied to be negative temperature coefficient(2.000-3,000) in the temperature range between -10 and $140^{\circ}C$, the dissipation factors (tan $\delta$) were some high(0.1-0.3). It was not grain insulation, in cause of the some difficult to be annealed temperature with CuO paste and fired atmosphere. But, we have some different annealing temperature and fired atmosphere, it will be suitable BL(Boundary Layer)capacitor.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.467-472
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• 1997

Porous silicon was prepared by an anodic etching. The pore size was about 10 nm at an etching time of 20 sec and a current density of 20 mA/$\textrm{cm}^2$. The porous layer was composed of an micro-porous layer (0.6 ${\mu}{\textrm}{m}$) and a macro-porous layer (10 ${\mu}{\textrm}{m}$). Room temperature PL with maximum peak 6700$\AA$ appeared. The peak disappeared by an oxidation reaction when the porous silicon was heated to 100~20$0^{\circ}C$ in atmosphere. In order to avoid the oxidation a heat treatment was done in H2 atmosphere. The micro-pore and Si column, which formed quantum well, were collapsed by the high temperature. The PL maximum peak of heated sample was gradually red-shifted and showed about 300$\AA$ red-shift at 50$0^{\circ}C$. The intensity of PL was maintained to high temperatures in lower pressures. The porous Si was carbonized in C2H2+H2 gas in order to increase thermal stability. The carbonization of the porous Si prevented red-shift of the maximum PL peak caused by sintering effect at high temperatures, and the carbonized porous Si showed Pl signal at higher temperatures by above 20$0^{\circ}C$ than the sample in H2 atmosphere.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.622-627
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• 2016

The effects of the debinding atmosphere on the properties of sintered reaction-bonded $Si_3N_4$ (SRBSN) ceramics prepared by tape casting method were investigated. Si green tape was produced from Si slurry of Si powder, using 11.5 wt% polyvinyl butyral as the organic binder and 35 wt% dioctyl phthalate as the plasticizer. The debinding process was conducted in air and $N_2$ atmospheres at $400^{\circ}C$ for 4 h. The nitridation process of the debinded Si specimens was performed at $1450^{\circ}C$, followed by sintering at $1850^{\circ}C$ and 20 MPa. The results revealed that the debinding atmosphere had a significant effect on $Si_3N_4$ densification and thermal conductivity. Owing to the higher sintered density and larger grain size, the thermal conductivity of $Si_3N_4$ specimens debinded in air was higher than that of the samples debinded in $N_2$. Thus, debinding in air could be suitable for the manufacture of high-performance SRBSN substrates by tape casting.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.41-47
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• 1998

The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.