• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.13-17
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• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.

• 한국표면공학회지
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• 제52권4호
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• pp.194-202
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• 2019

A systematic investigation was made on the influence of processing parameters such as gas composition and treatment temperature on the surface characteristics of hardened layers of low temperature plasma nitrided 316L Austenitic Stainless Steel. Various nitriding processes were conducted by changing temperature ($370^{\circ}C$ to $430^{\circ}C$) and changing $N_2$ percentage (10% to 25%) for 15 hours in the glow discharge environment of a gas mixture of $N_2$ and $H_2$ in a plasma nitriding system. In this process a constant pressure of 4 Torr was maintained. Increasing nitriding temperature from $370^{\circ}C$ to $430^{\circ}C$, increases the thickness of S phase layer and the surface hardness, and also makes an improvement in corrosion resistance, irrespective of nitrogen percent. On the other hand, increasing nitrogen percent from 10% to 25% at $430^{\circ}C$ decreases corrosion resistance although it increases the surface hardness and the thickness of S phase layer. Therefore, optimized condition was selected as nitriding temperature of $430^{\circ}C$ with 10% nitrogen, as at this condition, the treated sample showed better corrosion resistance. Moreover to further increase the thickness of S phase layer and surface hardness without compromising the corrosion behavior, further research was conducted by fixing the $N_2$ content at 10% with introducing various amount of $CH_4$ content from 0% to 5% in the nitriding atmosphere. The best treatment condition was determined as 10% $N_2$ and 5% $CH_4$ content at $430^{\circ}C$, where the thickness of S phase layer of about $17{\mu}m$ and a surface hardness of $980HV_{0.1}$ were obtained (before treatment $250HV_{0.1}$ hardness). This specimen also showed much higher pitting potential, i.e. better corrosion resistance, than specimens treated at different process conditions and the untreated one.

• 한국분말재료학회지
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• 제17권5호
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• pp.365-372
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• 2010

The evolution of sinterability, microstructure and mechanical properties for the spark plasma sintered(SPS) Ti from commercial pure titanium(CP-Ti) was studied. The densification of titanium with 200 mesh and 400 mesh pass powder was achieved by SPS at $750{\sim}1100^{\circ}C$ under 10 MPa pressure and the flowing $H_2$+Ar mixed gas atmosphere. The microstructure of Ti sintered up to $800^{\circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated grains was shown in sintered bodies at $900^{\circ}C$ with the 400 mesh pass powder and the lamella grains microstructure had been developed by increasing sintering temperature. The Vickers hardness of 240~270 HV and biaxial strength of 320~340 MPa were found for the specimen prepared at $950^{\circ}C$.

• 한국표면공학회지
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• 제48권4호
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• pp.158-162
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• 2015

To substitute indium tin oxide (ITO), many substituents have been studied such as metal nanowires, carbon based materials, 2D materials, and conducting polymers. These materials are not good enough to apply to an electrode because theses exhibit relatively high resistance. So metal grids are required as an additionalelectrode to improve the conductivities of substituents. The metal grids were printed by electrohydrodynamic printing system using Ag nanoparticle based ink. The Ag grids showed high uniformity and the line width was about $10{\mu}m$. The Ag nanoparticles are surrounded by dispersants such as unimolecular and polymer to prevent aggregation between Ag nanoparticles. The dispersants lead to low conductivity of Ag grids. Thus, the sintering process of Ag nanoparticles is strongly recommended to remove dispersants and connect each nanoparticles. For sintering process, the interface and microstructure of the Ag grid were controlled in 1.0 torr Ar atmosphere at aound $400^{\circ}C$ of temperature. From the sintering process, the uniformity of the Ag grid was improved and the defects on the Ag grids were reduced. As a result, the resistivity of Ag grid was greatly reduced up to $5.03({\pm}0.10){\times}10^{-6}{\Omega}{\cdot}cm$. The metal grids embedded substrates containing low pressure Ar sintered Ag grids showed 90.4% of transmittance in visible range with $0.43{\Omega}/{\square}$ of sheet resistance.

• 한국진공학회지
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• 제21권1호
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• pp.12-16
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• 2012

Top-Emitting OLED (Organic Light-Emitting Diode) 디스플레이에서는 반사율이 가장 높은 Ag (silver) 박막이 쓰이고 있지만, 소자에서 요구되는 일함수(work function)가 상대적으로 낮기 때문에 전극과 유기물간에 에너지 장벽이 발생하여 발광효율을 낮추는 요인이 되고 있다. 본 논문에서는 Ag 전극의 일함수를 높이기 위한 연구를 진행하였으며, 박막 형태의 Ag 전극에 대하여 nanotribology 접근법으로 연구를 실행하였다. Ag는 rf magnetron sputter를 이용해 glass 위에 증착한 후 furnace에서 $300^{\circ}C$, 30분간 대기 중에서 열처리하였고, 또 다른 시료는 표면에 산소 상압플라즈마로 처리 시간(30, 60, 90, 120s)을 각기 다르게 하여 시료를 제조하였다. Ag 전극을 nanoindentation을 통해 국부 영역에 대한 물리적 특성의 변화를 측정하였고, Kelvin probe force microscopy을 이용해 시료 표면의 포텐셜을 측정했다. 그 결과 열처리한 시료의 포텐셜값은 가장 크게 증가하였지만 균일도가 낮아졌다. 120s 플라즈마 처리한 시료는 불완전한 산화막의 생성으로 인해 탄성계수 및 경도값과 박막의 Weibull modulus를 극히 낮게 만들었지만, 60s, 90s 플라즈마 처리는 시료의 균일도를 높이고 또한 포텐셜을 증가시켜 T-OLED 성능 개선에 좋은 영향을 미치게 될 것이다.

• Advances in materials Research
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• 제13권1호
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• 대한화장품학회지
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• 제48권3호
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• pp.189-196
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• 2022

플라즈마란 고체, 액체, 기체에 이은 "4번째 상"으로서 이온화된 기체를 의미한다. 주로 용접과 네온사인에 응용 및 사용되어 왔으나, 최근 암 치료 등 의료 분야에도 적용되고 있으며, 피부에서는 콜라겐 생성 촉진, 피부 톤 개선, 피부 유해균 사멸 등 다양한 효과가 보고되고 있다. 본 연구는 대기의 주성분인 질소를 활용한 화장품 제조용 플라즈마 기기를 통해 질소 플라즈마 활성종 중, 추적 평가가 용이한 nitric oxide (NO)의 양을 측정하여 플라즈마의 양적/질적 평가를 진행하였다. 효율적인 플라즈마 처리를 위해 sinking과 non sinking 법을 활용한 주입 방법을 시도한 결과, non sinking 법을 활용한 제형의 근접 처리가 효과적임을 확인할 수 있었다. 나아가 토너와 앰플을 화장품 제형으로 선택하여 NO 플라즈마 주입 후 제형의 성상 및 주입한 플라즈마의 상태 변화를 관찰하였다. 두 제형에서 NO 플라즈마의 주입 성공량은 토너가 앰플보다 약 2 배 가량 높았으며, 시간에 따라 점진적으로 감소하여 일주일 후, 소실되는 것이 확인되었다. 사용된 질소 플라즈마는 저온(4 ℃), 실온(25 ℃), 고온(37 ℃, 50 ℃) 조건에서 토너와 앰플 제형의 안정도에 영향을 미치지 않는 것을 확인하였다. 종합적으로, 본 연구는 질소 플라즈마의 화장품 가능성을 제시하고 있으며 주입된 플라즈마의 안정성 확보의 중요성을 시사하고 있다.

• 열처리공학회지
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• 제17권2호
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• pp.87-93
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• 2004

Nitrocarburizing was carried out with various $CH_4$ gas composition with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% $O_2$ gas atmosphere with 4 torr at different temperatures for various time. In the case of plasma nitrocarburizing, It is that the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) and ${\gamma}^{\prime}-Fe_4$(C, N), which comprise the compound layer phase, depend on concentrations of $N_2$ gas and $CH_4$ such that when the concentration of $N_2$ and $CH_4$ increased, the ratio of ${\gamma}^{\prime}-Fe_4$(C, N) decreased, but the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) increased. The thickness of compound layer consistently increased as gas concentration increased regardless of $N_2$ and $CH_4$ expect when the concentration of $CH_4$ was 3.5 volume%, it decreased insignificantly. When oxidizing for 15min in the temperature range of $460{\sim}570{^\circ}C$, the study found small amount of $Fe_3O_4$ at the temperature of $460{^\circ}C$ and also found that amounts of $Fe_2O_3$. and $Fe_3O_4$ on the surface and amount of ${\gamma}^{\prime}-Fe_4$(C, N) in the compound layer increased as the increased over $460^{\circ}C$, but the thickness of the compound layer decreased. Corrosion resistance was influenced by oxidation times and temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).