• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.13-17
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• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.194-202
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• 2019

A systematic investigation was made on the influence of processing parameters such as gas composition and treatment temperature on the surface characteristics of hardened layers of low temperature plasma nitrided 316L Austenitic Stainless Steel. Various nitriding processes were conducted by changing temperature ($370^{\circ}C$ to $430^{\circ}C$) and changing $N_2$ percentage (10% to 25%) for 15 hours in the glow discharge environment of a gas mixture of $N_2$ and $H_2$ in a plasma nitriding system. In this process a constant pressure of 4 Torr was maintained. Increasing nitriding temperature from $370^{\circ}C$ to $430^{\circ}C$, increases the thickness of S phase layer and the surface hardness, and also makes an improvement in corrosion resistance, irrespective of nitrogen percent. On the other hand, increasing nitrogen percent from 10% to 25% at $430^{\circ}C$ decreases corrosion resistance although it increases the surface hardness and the thickness of S phase layer. Therefore, optimized condition was selected as nitriding temperature of $430^{\circ}C$ with 10% nitrogen, as at this condition, the treated sample showed better corrosion resistance. Moreover to further increase the thickness of S phase layer and surface hardness without compromising the corrosion behavior, further research was conducted by fixing the $N_2$ content at 10% with introducing various amount of $CH_4$ content from 0% to 5% in the nitriding atmosphere. The best treatment condition was determined as 10% $N_2$ and 5% $CH_4$ content at $430^{\circ}C$, where the thickness of S phase layer of about $17{\mu}m$ and a surface hardness of $980HV_{0.1}$ were obtained (before treatment $250HV_{0.1}$ hardness). This specimen also showed much higher pitting potential, i.e. better corrosion resistance, than specimens treated at different process conditions and the untreated one.

• Journal of Powder Materials
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• v.17 no.5
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• pp.365-372
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• 2010

The evolution of sinterability, microstructure and mechanical properties for the spark plasma sintered(SPS) Ti from commercial pure titanium(CP-Ti) was studied. The densification of titanium with 200 mesh and 400 mesh pass powder was achieved by SPS at $750{\sim}1100^{\circ}C$ under 10 MPa pressure and the flowing $H_2$+Ar mixed gas atmosphere. The microstructure of Ti sintered up to $800^{\circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated grains was shown in sintered bodies at $900^{\circ}C$ with the 400 mesh pass powder and the lamella grains microstructure had been developed by increasing sintering temperature. The Vickers hardness of 240~270 HV and biaxial strength of 320~340 MPa were found for the specimen prepared at $950^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.158-162
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• 2015

To substitute indium tin oxide (ITO), many substituents have been studied such as metal nanowires, carbon based materials, 2D materials, and conducting polymers. These materials are not good enough to apply to an electrode because theses exhibit relatively high resistance. So metal grids are required as an additionalelectrode to improve the conductivities of substituents. The metal grids were printed by electrohydrodynamic printing system using Ag nanoparticle based ink. The Ag grids showed high uniformity and the line width was about $10{\mu}m$. The Ag nanoparticles are surrounded by dispersants such as unimolecular and polymer to prevent aggregation between Ag nanoparticles. The dispersants lead to low conductivity of Ag grids. Thus, the sintering process of Ag nanoparticles is strongly recommended to remove dispersants and connect each nanoparticles. For sintering process, the interface and microstructure of the Ag grid were controlled in 1.0 torr Ar atmosphere at aound $400^{\circ}C$ of temperature. From the sintering process, the uniformity of the Ag grid was improved and the defects on the Ag grids were reduced. As a result, the resistivity of Ag grid was greatly reduced up to $5.03({\pm}0.10){\times}10^{-6}{\Omega}{\cdot}cm$. The metal grids embedded substrates containing low pressure Ar sintered Ag grids showed 90.4% of transmittance in visible range with $0.43{\Omega}/{\square}$ of sheet resistance.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.12-16
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• 2012

Although silver is used for T-OLED (Top emitting organic Light-Emitting Diode) as reflective anode, it is not an ideal material due to its low work function. Thus, we study the effect of annealing and atmospheric pressure plasma treatment on Ag film that increases its work function by forming the thin silver oxide layer on its surface. In this study, we deposited silver on glass substrate using RF sputtering. Then we treated the Ag samples annealing at $300^{\circ}C$ for 30 minutes in atmosphere or treating the atmospheric plasma treatment for 30, 60, 90, 120s, respectively. We measured the change of the mechanical properties and the potential value of surface with each one at a different treatment type and time. We used nano-indenter system and KPFM (Kelvin Probe Force Microscopy). KPFM method can be measured the change of surface potential. The nanoindenter results showed that the plasma treatment samples for 30s, 120s had very low elastic modulus, hardness and Weibull modulus. However, annealed sample and plasma treated samples for 60s and 90s had better mechanical properties. Therefore, plasma treatment increases the uniformity thin film and the surface potential that is very effective for the performace of T-OLED.

• Advances in materials Research
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• v.13 no.1
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.48 no.3
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• pp.189-196
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• 2022

Plasma refers to an ionized gas that is often referred to as "the fourth phase of matter", following solid, liquid, and gas. Plasma has traditionally been utilized for industrial applications such as welding and neon signs, but its promise in biomedical fields such as cancer treatment and dermatology has lately been recognized. Indeed, due to its beneficial effects in promoting collagen production, improving skin tone, and eliminating harmful bacteria in the skin, plasma treatment constitutes an important target for dermatological research. In this study, a plasma device for cosmetic manufacturing based on nitrogen, the main component of the atmosphere, was designed and assembled. Moreover, nitric oxide (NO) was selected since is easier to follow and evaluate than other nitrogen plasma active species, and its contents were measured to perform a quantitative and qualitative evaluation of plasma. First, an injection method, using different proximities labeled "sinking" and "non sinking" treatments, was performed to test the most efficient plasma treatment method. As a result, it was observed that the formulation obtained by a non sinking treatment was more effective. Furthermore, toner and ampoule were selected as cosmetics formulations, and the characteristics of the formulation and changes in the injected plasma state were observed. In both formulations, the successful injection of NO plasma was 2 times higher in toner formulation than ampoule formulation, and it gradually decreased with time, having dissipated after a week. It was confirmed that the nitrogen plasma used did not affect the stability of the toner and ampoule formulations at low temperature (4 ℃), room temperature (25 ℃), and high temperature (37 ℃ and 50 ℃) conditions. The results of this study demonstrate the potential of plasma cosmetics and highlight the importance of securing the stability of the injected plasma.

• Journal of the Korean Society for Heat Treatment
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• v.17 no.2
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• pp.87-93
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• 2004

Nitrocarburizing was carried out with various $CH_4$ gas composition with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% $O_2$ gas atmosphere with 4 torr at different temperatures for various time. In the case of plasma nitrocarburizing, It is that the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) and ${\gamma}^{\prime}-Fe_4$(C, N), which comprise the compound layer phase, depend on concentrations of $N_2$ gas and $CH_4$ such that when the concentration of $N_2$ and $CH_4$ increased, the ratio of ${\gamma}^{\prime}-Fe_4$(C, N) decreased, but the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) increased. The thickness of compound layer consistently increased as gas concentration increased regardless of $N_2$ and $CH_4$ expect when the concentration of $CH_4$ was 3.5 volume%, it decreased insignificantly. When oxidizing for 15min in the temperature range of $460{\sim}570{^\circ}C$, the study found small amount of $Fe_3O_4$ at the temperature of $460{^\circ}C$ and also found that amounts of $Fe_2O_3$. and $Fe_3O_4$ on the surface and amount of ${\gamma}^{\prime}-Fe_4$(C, N) in the compound layer increased as the increased over $460^{\circ}C$, but the thickness of the compound layer decreased. Corrosion resistance was influenced by oxidation times and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).