• 한국진공학회지
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• 제15권2호
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• pp.180-185
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• 2006

[ $Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$ ]계 박막형 열전발전 소자에 의해 volt 단위의 비교적 고전압에서 microwatt 수준의 출력을 발생시킬 수 있었다. 최대 출력은 온도차와 2차 함수적인 관계가 있었고, 주어진 온도차에서 판형 모듈의 적층수에 비례하여 증가하였다. 판형 모듈의 적층수와 직렬/병렬 연결 조합의 변화에 의해 출력 전압과 전류를 조절할 수 있었다. 온도차에 대한 개회로 전압과 폐회로 전류의 변화는 직선성을 보였다. 개회로 전압은 직렬 연결의 경우 판형 모듈의 수에 의존하였지만, 병렬 연결의 경우에는 의존하지 않았다. 반면, 폐회로 전류는 직렬연결의 경우 판형 모듈의 적층수와 무관하게 일정한 값을 나타내었고, 병렬 연결의 경우 판형 모듈의 적층수에 비례하여 증가하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.35-35
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• 2005

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.33-38
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• 2011

p형 $(Bi_{0.2}Sb_{0.8})_2Te_3$ 분말을 기계적 합금화 공정으로 제조하여 가압소결 후 가압소결온도에 따른 열전특성을 분석하였다. 가압소결온도를 $350^{\circ}C$에서 $550^{\circ}C$로 증가시킴에 따라 상온에서 측정한 Seebeck 계수가 237 ${\mu}V/K$에서 210 ${\mu}V/K$로 감소하고 전기비저항이 2.25 $m{\Omega}-cm$에서 1.34 $m{\Omega}-cm$로 감소하였으며, power factor가 $25.0{\times}10^{-4}W/m-K^2$에서 $32.9{\times}10^{-4}W/m-K^2$로 증가하였다. $350{\sim}550^{\circ}C$의 온도범위에서 가압소결한 시편들 중에서, $500^{\circ}C$에서 가압소결한 $(Bi_{0.2}Sb_{0.8})_2Te_3$ 가압소결체가 상온에서 1.09 및 $75^{\circ}C$에서 1.2의 가장 높은 무차원 성능지수를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.30-33
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• 1997

In this paper, we studied the variation in optical constants of Te-doped G $e_{15}$ /$Sb_{85}$ thin films with 7800$\AA$ diode-laser exposing time and power. The reflectances were increased with the increase of laser exposure time and the laser power in all films. Also, the refractive indices of the films after exposing were higher than those of the as-deposited films. Thus, the fast crystallization was caused by addition to the more Te content at the lower lacer power. It was observed that the surface morphologies of the exposed films are higher than those of the as-deposited films by SEM analysis. Therefore, it is considered that the T $e_{0.5}$(G $e_{15}$ /$Sb_{85}$)$_{99.5}$ thin films will show the high contrast ratio and high SNR and have fast erasing time due to crystallization when these films is applied to optical recording materials.terials.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.20-22
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• 1997

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

• 한국재료학회지
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• 제20권6호
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• pp.326-330
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• 2010

$CoSb_3$ Skutterudites materials have high potential for thermoelectric application at mid-temperature range because of their superior thermoelectric properties via control of charge carrier density and substitution of foreign atoms. Improvement of thermoelectric properties is expected for the ternary solid solution developed by substitution of foreign atoms having different valances into the $CoSb_3$ matrix. In this study, ternary solid solutions with a stoichiometry of $Co_{1-x}Ni_xSb_3$ x = 0.01, 0.05, 0.1, 0.2, $CoSb_{3-y}Te_y$, y = 0.1, 0.2, 0.3 were prepared by the Spark Plasma Sintering (SPS) system. Before the SPS synthesis, the ingots were synthesized by vacuum induction melting and followed by annealing. For phase analysis X-ray powder diffraction patterns were checked. All the samples were confirmed as single phase; however, with samples that were more doped than the solubility limit some secondary phases were detected. All the samples doped with Ni and Te atoms showed a negative Seebeck coefficient and their electrical conductivities increased with the doping amount up to the solubility limit. For the samples prepared by SPS the maximum value for dimensionless figure of merit reached 0.26, 0.42 for $Co_{0.9}Ni_{0.1}Sb_3$, $CoSb_{2.8}Te_{0.2}$ at 690 K, respectively. These results show that the SPS method is effective in this system and Ni/Te dopants are also effective for increasing thermoelectric properties of this system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.207-209
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• 1987

This paper reports the effect of additive elements such as Bi, Sb on degradation and hole formation of the Te-Se thin films. Changes in light transmission were used to monitor the degradation rate of thin Te films in an accelerated temperature-humidity environment. In thin accelerated temperature-humidity environment, $(Te_{86}Se_{14})_{70}Bi_{30}$ thin film was stable and $(Te_{86}Se_{14})_{50}Sb_{50}$ thin film was unstable in comparison with the other films that used in this experiment. The hole formation was carried out in the Te-based thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.15-18
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• 1996

The elemental segregation in the sputter-deposited AgInSbTe recording thin films was studied by means of Auger electron spectroscopy and ESCA for the specimens of as-deposited and as heat-treated conditions. Auger electron spectroscopy and ESCA revealed an extremely thin layer of elemental inhomogeneity, especially for the silver, even in as-deposited condition. The chemical analysis results obtained in this alloy system are discussed in terms of process parameters and target microstructure.

• 한국재료학회지
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• 제6권7호
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.