• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
• /
• pp.85-88
• /
• 2002

We have carried out two-beam interference experiments to form holographic gratings on chalcogenide $Ag/As_{40}Se_{15}S_{35}Ge_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by +1st order intensity and formed grating structure was investigated using atomic force microscopy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.107-107
• /
• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.490-493
• /
• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under non-polarization state and p-polarization state and we confirm that the diffraction efficiency depend on thickness of Ag. The diffraction efficiency was obtained by first order intensity. We got the maximum diffraction efficiency that thickness of Ag was $600{\AA}$. The maximum diffraction efficiency was 13.5% in (P:P) polarization state.

• 전자공학회논문지A
• /
• 제31A권12호
• /
• pp.71-79
• /
• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• 한국광학회지
• /
• 제8권6호
• /
• pp.445-449
• /
• 1997

비정질상과 결정상으로 가역변화하는 특성을 이용하여, 기존의 읽기전용 기록매체인 Compact Disk(CD)를 대체할 차세대 광기록매체로 주목받고 있는 Ge$_{2}$Sb$_{2}$Te$_{5}$(GST)의 상태변화에 따른 굴절율과 소광계수, 박막의 두께와 밀도 등 박막상수들을 구하였다. DC 스퍼터링방법으로 제작한 두꺼운 GST의 복소굴절율을 양자역학적 분산식을 이용한 모델링방법으로 구하고, 한편으로는 표면미시거칠기를 AFM(Atomic Force Microscopy)으로 결정한 다음, 타원해석 스펙트럼들을 수치해석적 역방계산하여 구한 복소굴절율과 비교하였다. 결정상과 비정질상일 때의 GST의 복소굴절율을 각각 구하고 이로부터 계산된 반사율을 측정된 반사율과 비교함으로써 수치해석적인 방법이 실제 GST의 복소굴절율과 더 일치하는 값ㅇㄹ 가지게 됨을 확인하였다. 이렇게 구한 GST의 복소굴절율을 기준데이터로 사용하여 실제 설계두께를 가지는 GST박막의 두께 및 표면거칠기층을 정량적으로 구하였다.다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
• /
• pp.20-23
• /
• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권8호
• /
• pp.387-391
• /
• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.1029-1032
• /
• 2004

This paper investigates that how diffraction efficiency is going to change according to amorphous As-Ge-Se-S. We made films such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8$ on the basis of 633nm, which is wavelength of recording laser(He-Ne). Among them, $\lambda/4$ has the highest diffraction efficiency value, while $\lambda/8$ has the lowest. The experiment shows that the highest diffraction efficiency value of $\lambda/4$ is about 0.09%, whereas diffraction efficiency of $\lambda/8$ is formed, which is merely close to 0%.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 제38회 하계학술대회
• /
• pp.1331-1332
• /
• 2007

In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.976-979
• /
• 2003

In this study, we formed the 2-dimensional holographic grating in order to mamufactured 2-dimensional photonic crystal in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ and $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film which have the excellent optical sensetivity using by He-Ne laser(632.8nm). The intensity of incident beam was 2.5mW and incident angle that $2{\theta}$ is $20^{\circ}$. We formed the holographic grating after had formed the 1-dimansional holographic grating and then rotate the sample. We confirmed that 2-dimensional holographic grating result of the figure of diffracted beam and AFM(Atomic Forced Microcopy) image.