• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.168-168
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• 2010

InAs는 0.35eV의 낮은 밴드갭을 가지며 상온에서 약 $30,000cm^2/Vs$의 높은 전자이동도를 보여, GaAs/AlGaAs 및 InGaAs/InP 2DEG HEMT에 이은 차세대 초고속 전자소자의 2DEG용 물질로 각광을 받고 있다. 그러나 InAs의 격자상수는 약 0.61nm로 이에 적절한 반절연기판을 구할수 없어, GaAs상에 Al(Ga)Sb를 이용하여 성장하는 방법으로 2DEG을 실현하고 있다. 상기 방법으로 상온에서 ${\sim}30,000cm^2/Vs$ 전자이동도를 보이는 InAs/AlSb 2DEG HEMT 소자를 여러 연구팀에서 시현하였으나, 실제적으로 응용하기 위해서 etch-stop층 또는 contact층의 제작이 용이치 않아 실제의 회로구현에는 어려움을 격고 있다. 이에 InGaAs/InP 2DEG내에 InAs를 넣어 InAs 2DEG을 제작하는 방법이 NTT[1]에 의해 제안되어, SPINTRONICS등의 InAs 2DEG이 필요한 곳에 응용되고 있다. [2] 본 발표에서는 고품질의 InAs 2DEG을 실현하기 위해, 다양한 성장 변수 (온도, As 분압, 성장 시퀀스, InAs층의 두께등)와 2DEG의 전기적특성간의 관계를 발표한다. 최종적으로 상온전자이동도 ${\sim}12,000cm^2/Vs$의 InAs 2DEG을 제작할수 있었으며, 이를 다양한 전자소자에 차후 응용할 예정이다.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.32 no.2
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• pp.58-67
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• 2000

This study was carried out to acquire basic data necessary for the use of non-wood pulp. Various chemical pulping methods for rice straw to achieve higher yield, lower Kappa No. were investigated and then the physical properties of various pulps were tested. The results of this study were as follows: When various chemical pulps (Soda, Soda-AQ, Soda-$H_2O_2$, Soda-$Na_2S_2$, AS, AS-AQ, AS-$Na_2S_2O_3$, AS-$Na_2S_2O_4$, Kraft) were produced with rice-straw, the pulps with the highest yield and lowest Kappa No. were obtained with Soda-$Na_2S_2$and AS-$Na_2S_2O_4$pulps. For the breaking length, Soda and Soda-additive pulps(7.5~9.2km) were better than AS and AS-additive pulps(6.2~8.1km). Similarly, for the burst index, Soda and Soda-additive pulps(6.0~7.0 kPa.$m^2$/g) were better than AS and AS-additive pulps(4.5~6.3 kPa.m$^2$/g). But the tear index was showed 21.8-30.9 mN.$m^2$/g with a little different between pulping methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Microbiology and Biotechnology Letters
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• v.24 no.5
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• pp.613-618
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• 1996

Microorganisms capable of producing ascorbic acid-2-phosphate (AsA2P) from ascorbic acid (AsA) and pyrophosphate (PPi) were screened from the culture collection of this laboratory. Among them, Cellulomonas sp. AP-7 showed the highest productivity of AsA2P. The optimal conditions for the production of AsA2P from AsA and PPi with cell-free extract as an enzyme source were investigated. The reaction mixture for the maximal production of AsA2P consisted of 21 g protein of cell-free extract per liter as the enzyme source, 250 mM AsA, 200 mM sodium pyrophosphate, 150 mM sodium acetate buffer (pH 4.5). By using this reaction mixture, 31.9 mM of AsA2P, which corresponded to a 12.76% yield based on AsA, was produced after incubation of 48 hr at 33$\circ$C.

• BMB Reports
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• v.43 no.4
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• pp.233-244
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• 2010

Parkinson's disease (PD) is the second most common neurodegenerative disease, and 5-10% of the PD cases are genetically inherited as familial PD (FPD). LRRK2 (leucine-rich repeat kinase 2) was first reported in 2004 as a gene corresponding to PARK8, an autosomal gene whose dominant mutations cause familial PD. LRRK2 contains both active kinase and GTPase domains as well as protein-protein interaction motifs such as LRR (leucine-rich repeat) and WD40. Most pathogenic LRRK2 mutations are located in either the GTPase or kinase domain, implying important roles for the enzymatic activities in PD pathogenic mechanisms. In comparison to other PD causative genes such as parkin and PINK1, LRRK2 exhibits two important features. One is that LRRK2's mutations (especially the G2019S mutation) were observed in sporadic as well as familial PD patients. Another is that, among the various PD-causing genes, pathological characteristics observed in patients carrying LRRK2 mutations are the most similar to patients with sporadic PD. Because of these two observations, LRRK2 has been intensively investigated for its pathogenic mechanism (s) and as a target gene for PD therapeutics. In this review, the general biochemical and molecular features of LRRK2, the recent results of LRRK2 studies and LRRK2's therapeutic potential as a PD target gene will be discussed.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.29-32
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• 2005

Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.129-129
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• 2002

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.79-84
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• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Bulletin of the Korean Chemical Society
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• v.18 no.10
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• pp.1105-1108
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• 1997

The new amorphous intermetallic compounds, M3(AsTe3)2: M=Cr, Co, Fe, were synthesized by the precipitation reaction of the Zintl anion AsTe33- with the divalent transition metal halides in aqueous solution and analyzed by EDS equipped with SEM and PIXE. The empirical formula of the specimens was found to be Fe3.0As1.8Te5.9, Co3.0As2.1Te6.5, and Cr3.0As2.0Te6.9 by the quantitative elemental analysis. The dc specific resistivity of the materials was measured as a function of temperature in the range from 20 to 300 K, in which their resistivity of Cr3(AsTe3)2 was largely dependent on temperature, while those of Co3(AsTe3)2 and Fe3(AsTe3)2 were only slightly dependent on temperature. To characterize the spin glass state of the specimens, the ac and dc magnetic susceptibility were measured and it was found that Co3(AsTe3)2 and Fe3(AsTe3)2 undergo a transition to a spin glass state at 6 K and 38 K, respectively. Magnetization data are reported as both thermal remanent magnetization (TRM) and isothermal remanent magnetization (IRM) as a function of magnetizing field and temperature.