• The Journal of the Acoustical Society of Korea
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• v.24 no.4
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• pp.230-237
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• 2005

The angle-tracking of maneuvering targets is required to the state estimation and classification of targets in underwater acoustic systems. The Problem of angle-tracking multiple closed and crossing targets has been studied by various authors. Sword et al. Proposed a multiple target an91e-tracking algorithm using angular innovations of the targets during a sampling Period are estimated in the least square sense using the most recent estimate of the sensor output covariance matrix. This algorithm has attractive features of simple structure and avoidance of data association problem. Ryu et al. recently Proposed an effective multiple target angle-tracking algorithm which can obtain the angular innovations of the targets from a signal subspace instead of the sensor output covariance matrix. Hwang et al. improved the computational performance of a multiple target angle-tracking algorithm based on the fact that the steering vector and the noise subspace are orthogonal. These algorithms. however. are ineffective when a subset of the incident sources are coherent. In this Paper, we proposed a new multiple target angle-tracking algorithm for coherent and incoherent sources. The proposed algorithm uses the relationship between source steering vectors and the signal eigenvectors which are multiplied noise covariance matrix. The computer simulation results demonstrate the improved Performance of the Proposed algorithm.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.383-388
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• 2007

A color filter was demonstrated incorporating a patterned metal grating in a quartz substrate. The filter is created in a metal layer perforated with a symmetric two-dimensional array of circular holes, with the pitch smaller than the wavelength of the visible light. A finite-difference time-domain simulation was performed to analyze the device by investigating the effect of structural parameters like the grating height, the period, the hole size, and the refractive index of the hole-filling material on its performance. The device performance was especially optimized by controlling the refractive index of the material comprising the holes of the grating. And two different devices were fabricated by means of the e-beam direct writing with the following design parameters: the grating height of 50 nm, the two pitches of 340 nm for the red color and 260 nm for the green color. For the prepared device with the period of 340 nm, the center wavelength was 680 nm and the peak transmission 57%. And for the other device with the pitch of 260 nm, the center wavelength was 550 nm and the peak transmission was 50%. The filling of the hole with a material whose refractive index is matched to that of the substrate has led to an increase of ${\sim}15%$ in the transmission efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.37-42
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• 2001

The concerns of the toxicity and health hazard of lead in solders have demanded the research to find suitable lead-free solder alloys. It was discussed that effect of the intermetallic formation and structure on the reliability of solder joints. In this study, lead-free solder alloys with compositions of Sn/3.5Ag/0.75Cu, Sn/2.0Ag/0.5Cu/2.0Bi were applied to the 48 $\mu$BGA packages. Also, the lead-free solder alloys compared with eutectic Sn/37Pb solder using shear test under various aging temperature. Common $\mu$BGA with solder components was aged at $130^{\circ}C$, $150^{\circ}C$ and $170^{\circ}C$. And the each temperature applied to 300, 600 and 900 hours. The thickness of the intermetallics was measured for each condition and the activation energy for their growth was computed. The fracture surfaces were analyzed using SEM (Scanning Electron Microscope) with EDS (Energy Dispersive Spectroscopy). These results for reliability of lead-free interconnections are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• The KIPS Transactions:PartD
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• v.18D no.3
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• pp.157-168
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• 2011

Recently flash memory has been being utilized as a main storage device in mobile devices, and flashSSDs are getting popularity as a major storage device in laptop and desktop computers, and even in enterprise-level server machines. Unlike HDDs, on flash memory, the overwrite operation is not able to be performed unless it is preceded by the erase operation to the same block. To address this, FTL(Flash memory Translation Layer) is employed on flash memory. Even though the modified data block is overwritten to the same logical address, FTL writes the updated data block to the different physical address from the previous one, mapping the logical address to the new physical address. This enables flash memory to avoid the high block-erase cost. A flashSSD has an array of NAND flash memory packages so it can access one or more flash memory packages in parallel at once. To take advantage of the internal parallelism of flashSSDs, it is beneficial for DBMSs to request I/O operations on sequential logical addresses. However, the B-tree structure, which is a representative index scheme of current relational DBMSs, produces excessive I/O operations in random order when its node structures are updated. Therefore, the original b-tree is not favorable to SSD. In this paper, we propose AS(Always Sequential) B-tree that writes the updated node contiguously to the previously written node in the logical address for every update operation. In the experiments, AS B-tree enhanced 21% of B-tree's insertion performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.221-221
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• 2013

Vertical LED (VLED) has been recognized as a way to obtain the high-power LED due to their advantages [1]. However, approximately 4% of the light generated from the active region is extracted, if the light extraction from side walls and back side is neglected because of Fresnel reflection (FR) and total internal reflection (TIR) [2,3]. In this study, the optical simulation of the VLED with the various microstructures was performed. Among them, the microlens having the diameter of 3 ${\mu}m$ and the height of 1.5 ${\mu}m$ shown the best result was chosen, and then, optimized microlens was formed on a GaN template using conventional semiconductor process. Various microstructures were proposed to improve the light extraction efficiency (LEE) of the VLED for the simulation. The LEE was simulated using LightTools based on a Monte Carlo ray tracing. The microstructures with hemisphere, cone, truncated and cylinder pattern having diameter of 3 ${\mu}m$ were employed on the top layer of the VLED respectively. The improvement of the LEE by using the microstructure is 87% for the hemisphere, 77% for the cone, 53% for the truncated, 21% for the cylinder, compared with the LEE of the flat surface at the reflectance of 85%. The LEE was increased by 88% at the height of 1.5 ${\mu}m$, compared with the LEE of the flat surface. We found that the microlens on the top layer is the most suitable for increasing the LEE. In order to apply the proposed microlens on n-GaN surface, we fabricated microlens on a GaN template. A photoresist array having hexagonal-closed packed microlens was fabricated on the GaN template. Then, optimization of etching the GaN template was performed using a dry etching process with ICP-RIE. The dry etching carried out using a gas mixture of Cl2 and Ar, each having a flow rate of 16 sccm and 10 sccm, respectively with RF power of 50 W, ICP power of 900 W and chamber pressure of 2 mTorr was the optimum etching condition as shown in Fig. 2(a).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.2
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• pp.165-170
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• 2014

Shear horizontal (SH) waves propagate as a type of plate wave in a thin sheet. The dispersion characteristics of SH waves can be used for signal analysis. Therefore, SH-waves are useful for monitoring the structural health of a thin-sheet-structure. An electromagnetic acoustic transducer (EMAT), which is a non-contact ultrasonic transducer, can generate SH-waves easily by varying the shape and array of magnets and coils. Therefore, an EMAT can be applied to an automated ultrasonic testing system for structural health monitoring. When used as a sensor, however, the EMAT has a weakness in that electromagnetic interference (EMI) noise can occur easily in the automated system because of motors and electric devices. Alternatively, a fiber optic sensor works well in the same environment with EMI noise because it uses a light signal instead of an electric signal. In this paper, a fiber Fabry-P$\acute{e}$rot interferometer (FFPI) was proposed as a sensor to receive the SH-waves generated by an EMAT. A simple test was performed to verify the performance of the FFPI sensor. It is thus shown that the FFPI can receive SH-wave signals clearly.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.31-40
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• 2012

There are two methods to fabricate the readout electronic to a large-area CMOS image sensor (LACIS). One is to design and manufacture the sensor part and signal processing electronics in a single chip and the other is to integrate both parts with bump bonding or wire bonding after manufacturing both parts separately. The latter method has an advantage of the high yield because the optimized and specialized fabrication process can be chosen in designing and manufacturing each part. In this paper, LACIS chip, that is optimized design for the latter method of fabrication, is presented. The LACIS chip consists of a 3-TR pixel photodiode array, row driver (or called as a gate driver) circuit, and bonding pads to the external readout ICs. Among 4 types of the photodiode structure available in a standard CMOS process, $N_{photo}/P_{epi}$ type photodiode showed the highest quantum efficiency in the simulation study, though it requires one additional mask to control the doping concentration of $N_{photo}$ layer. The optimized channel widths and lengths of 3 pixel transistors are also determined by simulation. The select transistor is not significantly affected by channel length and width. But source follower transistor is strongly influenced by length and width. In row driver, to reduce signal time delay by high capacitance at output node, three stage inverter drivers are used. And channel width of the inverter driver increases gradually in each step. The sensor has very long metal wire that is about 170 mm. The repeater consisted of inverters is applied proper amount of pixel rows. It can help to reduce the long metal-line delay.

• Journal of Conservation Science
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• v.34 no.6
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• pp.517-524
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• 2018

This study using a method different from those employed previously, the anatomical characteristics of paper-mulberry wood were confirmed by observing three different sections. In addition, the factors affecting the pulp and papermaking processes were analyzed in terms of morphological properties such as the fiber length and width, lumen width, and chemical composition of the paper-mulberry bast fiber. The anatomical characteristics of the paper-mulberry wood were a ring porous or semi-ring porous structure with the vessels showing solitary pore and radial array. The medullary ray of the tangential section showed 1-3 rows and common helical thickening. Consequently, the paper-mulberry wood has the same anatomical characteristics throughout. The morphological characteristics of the paper-mulberry bast fiber are a fiber length of 6.58 to 9.01 mm, fiber width of 15.85 to $27.80{\mu}m$, lumen width of 4.50 to $12.54{\mu}m$. The D sample of Gangwon was the most suitable for the pulp and papermaking processes, in terms of its derived morphological ratios. Comparing the chemical compositions, the C sample of Gyeongsang had a high holocellulose content (90%). Thus, the findings herein will aid in determining the quality of Korean paper post production.