• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.70-75
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• 1998

The ZnS-SiO$_2$ composite films were fabricated by codeposition from two independent sources. The optical properties and microstructures of these composite films were investigated. The refractive indices of the composite films were compared those by Drude's fomula and showed a good agreement. it showed that microstructures of composite films are an armorphous. But microstructures of composite films with ion assisted deposition are changed from an armorphous to crystalline with increasing Zn mole fractions. We designed and fabricated a single layer antireflection coating on the crystalline silicon substrate using the refractive index of the composite films.

• Journal of the Korea institute for structural maintenance and inspection
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• v.17 no.3
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• pp.89-96
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• 2013

Now-a-days, a manhole adopted since the late 1990s and produced using the polymer concrete has widely used due to the various benefits. While entering the High oil prices times, however, and with the price increase of the petrochemical materials, the cost of manufacture of polymer concrete was elevated and the resulting polymer concrete's weakness is being put on. Accordingly, the development of economic cement concrete manholes, which can replace the outstanding bending strength of manhole made of high-price polymer concrete, has been required. In this study, based on the cement technology of fast hardening armorphous calcium aluminate (ACA), by minimizing the amount of cement using the industrial byproducts, to develop the eco-friendly high-toughness concrete manhole, which can reduce $CO_2$ reduction, was intended. As the results, the cement concrete manhole, which economic, eco-friend, and meeting the performance requirements, was developed.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.77-79
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• 2009

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.558-563
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• 1996

We fabricated high voltage hydrogenerated amorphous silicon thin film transistors (a Si:H HVTFT) and investigated its temperature dependent characteristics of from 303 K to 363 K. The results show that the drain current was decreased at low gate voltage and increased at high gate voltage exponentially. According to the increasing the thickness of a Si layer, drain current increased. Difference of drain current at 363 K was increasd at the lower gate voltage and decreased at the higher gate voltage. When the drain and gate voltage of 100 V applied, the drain current increased linearly with rise temperature.

• Applied Microscopy
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• v.25 no.1
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• pp.15-29
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• 1995

Legumin was purified from the endosperm cells of the ginseng seed and analyzed its characteristics. Distributional patterns of the legumin in the endosperm cells were identified using the immunocytochemical method. Legumin was glycoprotein composed of two subunits, molecular weights about 33,000 and 25,000 respectively. The molecular shape of purified legumin stained negatively seems to have hexagonal structure about 10 nm in size. It was localized at the rER, dictyosomes, and in the vacuoles at the early developing stage. Legumin was glycosylated in the dictyosomes and transported from the dictyosomes to the vacuoles. Legumin was accumulated into the central vacuole via the dictyosomes while the endosperm cells were developing. The armorphous proteins containing legumin were scattered randomly within the central vacuoles, which were aggregated together and became gradually spherical shape. Legumin was distributed within the globular protein bodies in the endosperm cells of matured seed. However legumin was not found in the globoids located in the protein bodies.

• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.161-167
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• 1989

Effects of bath composition on electroless deposition of Ni-W-B from sulphate solution were invesrigated in terms of deposition kinetics, electro resistivity and composition of deposit film. The microstruigated and crystataine structure of the films were also studied using a scanning electron microscope and X-ray diffractometer. The deposition rate increased linearly with increasing the concentration of nickel sulphate in bath solution, wheras the rate decreasing with sodium citrate. The rate was also affected by sodium tungstate, which was maaximum at the concentration of 0.06 M/1 in sodium tungstate, The content of W in the deposit increased with increased with increasing the sodium citrate had on opposite effect on the composition of W and B in the deposit. The crystal change film from armorphous to cryatallicne nature by heat treatments was proved by the reduction of specific resistance and X-ray diffration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.38-40
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• 1988

This paper was a study on dielectic characteristics of polypropylen film which were annealled in air and qunched in nitorgen after aging for 5[Hr]. Dielectric characteristics of specimen were measured in temperature of the range of 15-120[$^{\circ}C$], and in frequency of the range of $30-1{\times}10^6$[Hz.] As the result, for dielectric relaxation $\beta$-peak was observed in 20[$^{\circ}C$], and $\alpha$-peak was observed in 90[$^{\circ}C$]. Also, it was explained that $\alpha$-peak attributed due to armorphous region and $\beta$-peak attributed due to crystalline region and activation energy from dielectric loss spectra was obtained 34.5[kcal/mole] for $\alpha$-peak and 80.5[Kcal/mole] for $\beta$-peak, respectively.

• Journal of Korea Foundry Society
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• v.2 no.3
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• pp.16-24
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• 1982

For the purpose of development of domestic carburizer, when the basicity of ash in carburizer was changed from $Na_2O/Al_2O_3+SiO_2$ ; 0.06 to $Na_2O/Al_2O_3+SiO_2$ ; 0,196wt%, using $Na_2O$ as flux for domestic graphite resource (Bong Myung armorphous graphite), carburizing efficiency was improved as basicity increased, optimum basicity value was $Na_2O/Al_2O_3+SiO_2$ ; 0.151. This means that $Na_2O$ contributed to lower viscosity of slag and raise occurence probability of specific reaction surface between molten iron and carburizer. The experiment of effect of general characteristics offecting carburizing ability of this carburizer was performed, the result is that 10/30 mesh was optimum size of the carburizer and as carbon equivalent of molten iron was higher, carburizing ratio was lowered, but when si concentration was below 1.8% in general cast iron melting region, recovery showed 75-85%. As agitation rate of molten iron and temperature interval were higher, Carburizing ratio was increased and showed max, 94%. Desulfurizing phenomena of molten iron by $Na_2O$ in carburizer didn't appear.

• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.5-8
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• 2008

On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.