• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.1
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• pp.22-27
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• 2022

In accordance with the growing trend of decommissioning nuclear facilities, research on the cutting process is actively proceeding worldwide. In general, a thermal cutting process, such as plasma cutting is applied to decommissioning a nuclear reactor pressure vessel (RPV). Plasma cutting has the advantage of removing the radioactive materials and being able to cut thick materials. However, when operating under water, the molten metal remains in the cut plane and re-solidifies. Hence, cutting is not entirely accomplished. For these environmental reasons, it is difficult to cut thick metal. The contact arc metal cutting (CAMC) process can be used to cut thick metal under water. CAMC is a process that cuts metal using a plate-shaped electrode based on a high-current arc plasma heat source. During the cutting process, high-pressure water is sprayed from the electrode to remove the molten metal, known as rinsing. As the CAMC is conducted without using a shielding gas, such as Argon, the electrode is consumed during the process. In this study, CAMC is introduced as a method for dismantling nuclear vessels and the relationship between the metal removal and electrode consumption is investigated according to the cutting conditions.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of the korean academy of Pediatric Dentistry
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• v.31 no.4
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• pp.671-679
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• 2004

The purpose of this study was to develop a practical caries activity test by fluorescence using laser, plasma light and halogen light. The subjects of study were 45 children of 7-8 years old Argon laser, plasma light and halogen light were irradiated to buccal or labial surface of all teeth. Fluorescence of initial carious lesion from teeth was observed through barrier filter and the number of teeth showing lesion was counted. Visual examination for the dDfFtT, mutans streptococci screening test and Lactobacilli colony counting were also done. Data analysis was accomplished by Axelsson's method. The result from the present study can be summarized as follows. 1. Laser, plasma light and halogen light could detect the initial carious lesions better than visual examination(p<0.05). 2. There was positive correlation between laser(r=0.42), plasma light(r=0.41), halogen light(r=0.39) and dBfFtT rate(p<0.01). 3. The specificity sensitivity and predictive value was showed highest value in laser, but was showed favorable value in plasma light and halogen light. In regard to above results, laser, plasma light and halogen light all considered to be reliable method for determining individual caries activity. And they were also considered to be practical method because it would be simple, inexpensive, and time saving method.

• Journal of Industrial Convergence
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• v.21 no.3
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• pp.189-194
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• 2023

Recently, various studies on flexible electronic devices have been performed. In this study, the potential of Ag nanowires was evaluated as a material to replace the ITO transparent conductive film. Ag nanomaterials were formed on the glass by a novel brush coating method and an argon plasma evaporation method based on atmospheric pressure plasma. First, the Ag solution is coated on the glass with a brush, and the remaining solvent is removed with atmospheric plasma. During this process of solvent evaporation, a sound is generated by the reaction between the atmospheric plasma and the solvent. Therefore, the remaining amount of the solvent can be confirmed. In order to observe optical properties and electrical results such as reflectance, transmittance, and absorbance according to the number of coatings of the film, the results were analyzed by coating up to 5 times. For the purpose of investigating the interaction of light with Ag nanowires, reflectance and transmittance were measured while changing the wavelength of light from 200 nm to 800 nm. In the case of absorbance, the trend of increasing light absorption of the Ag nanowires according to the coating was clearly confirmed. The electrical properties showed a great change from the time of coating more than 4 times, and in particular, the resistance value was lower than kΩ/cm2 when the coating was applied 5 times. Based on these optical and electrical results, we plan to verify the possibility of a transparent conductive film by applying it to electronic devices in the future.

• Journal of the korean academy of Pediatric Dentistry
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• v.31 no.3
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• pp.421-430
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• 2004

The purpose of this study was to measure and compare the amount of unreacted TEGDMA from pit and fissure sealants cured with three different light sources; conventional halogen light curing unit, plasma arc light curing unit and argon laser. The specimens were eluted in distilled water for different time intervals. The time-related release of TEGDMA were analyzed by reverse-phase high performance liquid chromatography(HPLC). The result of present study can be summarized as follows: 1. The time-related release of TEGDMA decreased with increasing curing time in conventional halogen light, however, that not statistically significant difference(p>0.05). 2. The elution from the specimens cured for 6 and 9 seconds with plasma arc light was similar results corresponding with the time-related TEGBMA release, and was significantly lower than that cured for 3 seconds(p<0.05). 3. The elution of TEGDMA from the specimens cured with argon laser was significantly higher than that cured with halogen and plasma arc light(p<0.05). 4. The elution of TEGDMA from under recommended time of three different light sources were showed to be no statistically significant difference(p>0.05). 5. In time-related release of TEGDMA from recommended time of each light sources, the results correspond to 40 seconds of halogen light and 6 seconds of plasma arc light were similar(p>0.05). 6. The elution of TEGDMA, from over recommended time of three different light sources were showed to be no statistically significant difference(p>0.05). In this study, I suggest that curing time of plasma arc light is 6 and/or 9 seconds in the field of clinical pediatric dentistry claiming its effectiveness in optimal polymerization and reduced chair time.

• Journal of the korean academy of Pediatric Dentistry
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• v.32 no.4
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• pp.611-619
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• 2005

The aim of this study was to apply the quantitative light-induced fluorescence(QLF) and use of fluorescein-enhanced QLF method for quantitative assessment of early enamel demineralization in vitro, comparing effectiveness of light sources : argon laser, halogen lamp, light emitting diode (LED) and plasma arc lamp. Sixty extracted teeth were used, prepared by gentle pumicing and coating in an acid-resistant nail-varnish, except for an exposure to a demineralizing solution. Teeth were removed at regular intervals (24, 48 and 72hrs), air-dried and QLF image were taken. Mineral loss, as measured by difference of optical density, was recorded. For dyeenhanced QLF a 0.075% sodium fluorescein dye was applied after QLF examination and mineral loss was recorded. The following result were obtained : 1. Comparing with mean difference of optical density, plasma arc lamp was higher than other light sources in all group (p<0.05). 2. Comparing each group with mean difference of optical density, there was significant different using plasma are lamp and halogen lamp. 3. For use of dye-enhanced QLF, comparing with mean difference of optical density, plasma arc lamp were higher than other light sources in all group(p<0.05). 4. With this model dye-enhanced QLF compared with QLF in optical density, dye-enhanced QLF was higher than QLF in optical density. From the results presented in this paper, it was concluded that plasma light source was more effective compared with other light source for the detection and the quantification of early enamel caries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.111-111
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• 1999

반도체 소자의 고집적화 및 고속화에 따라 다층 금속배선에서의 RC 지연이 전체 지연의 주된 요소로 되고 있다. 이런 RC 진연을 줄이기 위해서 현재 다층 금속배선의 층간 절연막으로 사용하고 있는 SiO2 박막(k~3.9)을 보다 낮은 유전상수(low-k)를 가지는 물질로 대체할 것이 요구된다. 층간 절연막으로서 가져야 할 가장 중요한 것은 낮은 유전상수와 높은 열적안정성($\geq$45$0^{\circ}C$)이다. 본 연구에서는 Toluene을 precursor로 사용한 PECVD방법으로 low-k 유사중합체 유기박막을 성장시켰으며 부동한 온도에서 성장된 박막의 특성을 비교하여 증착온도가 박막의 특성에 미치는 영향에 대하여 조사하였다. 유사중합체 유기박막은 platinum(Pt)기판과 silicon 기판위에 같이 증착되었다. Precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 증발된 precursor molecules는 Argon(Ar:99.999%) carrier 가스에 의해 process reactor 내부로 유입된다. Plasma는 RF(13.56MHz generator로 연결된 susceptor 주위에 발생시켰다. Silicon 기판위에 증착한 시편으로 Fourier transform infrared (FTIR) spectra 및 열적 안정성을 측정하였고, Pt 기판위에 증착한 시편으로 Al/유기박막/Pt 구조의 capacitor를 만들어 열적안정성을 측정하였고, Pt 기판위에 증착한 시편으로는 Al/유기박막/Pt 구조의 capacitor를 만들어 K값 및 절연성을 측정하였다. Capacitance는 1MHz 주파수에서 측정하였다. 열적안정성은 30분동안 Ar 분위기에서 annealing하기 전후의 증착막의 두께의 변화를 측정함으로써 조사하였으며 유기박막의 두께는 surface profilometer로 측정하였다. 증착온도가 45$^{\circ}C$에서 15$0^{\circ}C$, 25$0^{\circ}C$로 높아짐에 따라 k값은 높아졌지만 대신 열적안정성은 좋아졌다. plasma power 30W인 경우 45$^{\circ}C$에서 증착했을 때 유전상수는 2.80으로 낮았지만 40$0^{\circ}C$에서 30분 동안 열처리한 후 두께가 49% 감소하였다. 그러나 25$0^{\circ}C$에서 증착했을 때 유전상수는 3.10으로 좀 높아졌지만 열적으로는 40$0^{\circ}C$까지 안정하였으며 45$0^{\circ}C$에서도 두께의 감소는 8%에 불과했다.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.587-592
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• 2003

The thin films of 316L stainless steel were made on glass and S45C substrate by Ion beam assisted deposition with reactive atmosphere of argon and nitrogen. The films were deposited at the various conditions of ion beam power and the ratios of Ar/$N_2$gas. Properties of these films were analyzed by glancing x-ray diffraction method(GXRD), AES, potentiodynamic test, and salt spray test. The results of GXRD showed that austenite phase could be appeared by $N_2$ion beam treatment and the amount of austenite phase increased with the amount of nitrogen gas. The films without plasma ion source treatment had the weak diffraction peak of ferrite phase. But under the Ar plasma ion beam treatment, the strong diffraction peaks of ferrite phase were appeared and the grain size was increased from 12 to 16 nm. Potentiodynamic polarization test and salt spray test indicated that the corrosion properties of the STS 316L films with nitrogen ion source treatment were better than bulk STS 316L steel and STS 316L films with Ar ion source treatment.