• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Journal of Adhesion and Interface
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• v.8 no.3
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• pp.1-8
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• 2007

An atmospheric plasma pre-treatment method was applied to polyurethane foam to improve its contact angle and adhesion. In order to investigate the optimum reaction condition of plasma treatment, type of reaction gas (nitrogen, argon, oxygen, air), rate of gas flow (30~150 mL/min), and reaction time (0~30 sec) were examined in a plate plasma reactor. Also, the effects were compared to those of a conventional vacuum plasma pre-treatment system. The result of the surface modification with respect to the treatment procedure was characterized by using SEM and ATR-FTIR. Due to a decrease of the contact angle of polyurethane foam, the greatest adhesion strength was achieved at a flow rate of 100 mL/min and at a reaction time of 10s for N2 gas. Consequently, the atmospheric plasma treatment reduced the contact angle of the polyurethane foam and also resulted in the improvement of the peel strength.

• Journal of the Korean Applied Science and Technology
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• v.40 no.1
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• pp.71-80
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• 2023

Silver paste is a valuable electrode material for electronic device applications because it is easy to handle with relatively low heat treatment. This study treated the electrode surface using an atmospheric-pressure plasma jet on the silver-paste electrode. This plasma jet was generated in an argon atmosphere using a high voltage of 5.5 to 6.5 kV with an operating frequency of 11.5 kHz. Plasma-jet may be more beneficial to the printing process by performing it at atmospheric pressure. The electrode surface becomes hydrophilic quickly and contact angle variation is observed on the electrode surface as a function of plasma treatment time, applied voltage, and gas flow rate. Also, there was no deviation in the contact angle after the plasma treatment in the large-area sample, that means a uniform result could be obtained regardless of the substrate size. The outcomes of this study are expected to be very useful in forming a stacked structure in the manufacture of large-area electronic devices and future applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.141-141
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• 2013

We have generated the needle-typed nonthermal plasma jet by using an Ar gas flow at atmospheric pressure. Diagnostics of electron temperature anddensity is critical factors in optimization of the atmospheric plasma jet source in accordance with the gas flow rate. We have investigated the electron temperature and density of plasma jet by selecting the four metastable Ar emission lines based on the atmospheric collisional radiative model and radial profile characteristics of current density, respectively. The averaged electron temperature and electron density for this plasma jet are found to be ~1.6 eV and ~$3.2{\times}10^{12}cm^{-3}$, respectively, in this experiment. The densities of OH radical species inside the various bio-solutions are found to be higher by about 4~9 times than those on the surface when the argon bioplasma jet has been bombarded onto the bio-solution surface. The densities of the OH radicalspecies inside the DI water, DMEM, and PBS are measured to be about $4.3{\times}10^{16}cm^{-3}$, $2.2{\times}10^{16}cm^{-3}$, and $2.1{\times}10^{16}cm^{-3}$, respectively, at 2 mm downstream from the surface under optimized Ar gas flow 250 sccm.

• Journal of Korean Society of Water and Wastewater
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• v.20 no.1
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• pp.79-85
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• 2006

Innovated technique to oxidize pollutants has been developed. The technique for this study uses plasma discharge in 2-phase (Air-Water) and is called Discharged Water Generating (DWG) system. It produces electric arc which generates not only the physical decomposing power against the pollutants but also oxidants to sterilize pollutants depending on the inlet gas species. These physical and chemical products play an important role in COD decrease and biodegradability enhancement. The enhancement of biodegradability for the refractory organic substances in aqueous solution was estimated in this study. Argon discharge reduced NBDCOD of EDTA from 58.7mg/L to 38.8mg/L, but oxygen discharge and ozonation reduced it to 37.74mg/L and 38.73mg/L respectively. Furthermore, Argon discharge changed 1181mg/L of NBDCOD of dye effluent into 606mg/L but oxygen discharge and ozonation changed it into 888mg/L and 790mg/L respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.162-162
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• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1449-1450
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1431_1432
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• 2009

본 연구에서는 전자빔에 의해 생성되는 저온 플라즈마의 특성을 시뮬레이션을 통해 알아보았다. 전자빔 소스에서 전자를 생성하여 가속 전압을 인가하여 챔버로 보내고, 챔버 속의 Argon 중성 기체와 전자가 충돌하여 2차 방전을 일으킴으로써 저온 플라즈마가 생성된다. 이 때 중성기체의 압력과 가속전압의 변화에 따라서 플라즈마 밀도와 온도가 변하는데, 어떠한 특성을 가지는지 알아보기 위해 Particle-In-Cell(PIC) 시뮬레이션을 이용하였다. 챔버 내부에서 전자빔과 중성기체에 의한 변화를 관측했고, 이 때 전자빔 소스에서 Negative Acceleration Voltage는 10V~40V, 챔버 내부의 Argon 중성 기체의 압력은 1mTorr~20mTorr 조건하에서 시뮬레이션을 수행하였다. Electron Energy Distribution function (EEDF)을 관찰한 결과, 가속전압이 높을수록 낮은 에너지를 가지는 전자의 수가 증가하여 전자 밀도는 증가하며, 가스 압력이 높을수록 EEDF의 기울기가 커지면서 전자온도는 감소함을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.640-643
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• 2004

유도결합형 플라즈마는 낮은 가스 압력에서도 고밀도의 플라즈마를 발생시키기 때문에 무전극 램프에 많이 적용되고 있다. 그리고 무전극 램프는 장 수명을 실현하고 고품질의 빛을 발생하기 때문에 앞으로 광범위하고 다양한 장소에 사용이 예상된다. 본 논문에서는 유도결합형 플라즈마를 이용한 아르곤 가스의 방전 특성 중에서 색 좌표 특성을 살펴보았다. 즉, 외부 안테나에 의해 발생된 13.56[MHz]의 RF Power를 방전관 내부로 전달하고, 아르곤 가스 압력과 RF Power 변화에 따른 아르곤 가스의 방전 특성을 측정하였다. 또한, 유도결합형 플라즈마를 방전시키기 위한 아르곤 가스의 압력은 1[mTorr]에서 100[mTorr], RF 전력은 10[W]에서 120[W]이며 이의 색 좌표 특성과 스펙트럼을 살펴보았다. 측정 결과 RF 출력이 증가하면 색 좌표의 x, y 값이 동시에 감소하였다. 아르곤 가스 압력이 증가하면 농도의 증가로 인해 발광이 어려웠으며, 색 좌표 특성은 압력이 증가하면서 y 값은 변화가 적었으나 x 값이 100[mTorr]일 크게 증가하는 현상이 나타났다.