• 한국연소학회:학술대회논문집
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• 한국연소학회 2013년도 제46회 KOSCO SYMPOSIUM 초록집
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• pp.73-76
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• 2013

The inert gas dilution effect for the stability of a stratified propane premixed flame has been experimentally studied. The addition of inert gases to a stratified premixed flame, which used to be very stable without dilution, makes a flame unstable. The lower equivalence ratio on the outer premixed flame and the lower fuel flow rate through the inner nozzle were observed to be the more stable conditions for the stratified premixed flame with nitrogen or argon dilution. It has been interpreted with the flame structure change such as shift of stoichiometric ratio region in a flame.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.160-163
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• 1994

Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering and the resistivity of these films was measured. We deposited tungsten and tungsten nitride films by RF and DC sputtering at various conditions and derived equations that determines the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of theme films under various conditions like temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures

• 한국표면공학회지
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• 제34권2호
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• pp.89-96
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• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.

• 분석과학
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• 제7권4호
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• pp.483-492
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• 1994

Glow Discharge를 이용한 고체 시료의 극미량 원소분석은 흡광, 방출, 형광 그리고 질량 분석 방법들이 특히 금속 시료들의 분석을 위해 많이 연구되어지고 있다. 본 연구에서는 자체 제작한 Gas-Jet-assisted Glow Discharge(GJGD)를 이용하여 각 실험변수에 따른 영향을 비교하여 보았다. 제작한 글로우 방전의 특성화 실험에 사용한 실험 변수로는 전류, 방전 가스의 흐름 속도, 압력 등이었고 시료는 황동을 사용하였다. 시료의 주원소인 구리(Cu)와 아연(Zn)의 방출선세기와 방전가스인 아르곤(Ar)의 상대적인 세기를 비교하여 보았는데, 대체적으로 전류의 증가는 튕겨나옴(Sputtering) 현상을 촉진시켜 방출선의 세기가 증가하였고 가스 흐름 속도는 플라즈마 속으로의 수송과 확산에 관여하여 증가될수록 방출선의 세기를 감소시켰다. 글로우 방전 내의 압력의 증가는 튕겨나옴 현상을 감소시킴과 더불어 시료 표면으로의 재부착을 증가시켜 방출선의 세기가 급격히 감소함을 보여 주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.262-262
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• 2010

To investigate the effect of the amount of hydrogen on CVD grown-graphene, the flow rate of hydrogen was changed, while other process parameters were kept constant during CVD synthesis. Substrate which consists of 300nm-nickel/$SiO_2$/Si substrate, and methane gas mixed with hydrogen and argon were used for CVD growth. Graphene was synthesized at $950^{\circ}C$. The thickness and the defect of graphene were analyzed using raman spectroscopy. The synthesized graphene shows non-uniform and more defective below a certain amount of hydrogen.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.25-30
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• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.33-37
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• 2013

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.9sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $H_2$ flow rate. The electrical resistivity of IZO film decreased with increasing flow rate of $H_2$ under Ar+$H_2$. The change of electrical resistivity with increasing flow rate of $H_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility and the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.152-155
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• 2003

Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

• Korean Chemical Engineering Research
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• 제48권5호
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• pp.556-560
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• 2010

부타디엔 고무 소재의 접착력을 향상시키기 위하여 대기압 표면개질방식을 적용시켰다. 평판형 플라즈마반응기의 최적의 반응조건을 구하기 위하여 반응기체(질소, 아르곤, 산소, 공기), 기체유량(30~100 mL/min), 플라즈마 처리시간(0~30초) 및 선처리제의 개질방법(GMA, 2-HEMA)을 변화시켜 실험하였다. 처리 전후의 소재의 표면변화는 SEM과 ATR-FTIR로 측정하였다. 기체의 유량과 처리시간이 증가함에 따라 접촉각이 감소하였고, 반응 기체는 공기로 유량 60 mL/min, 처리시간 5초 및 2-HEMA 첨가 선처리제를 사용하였을 때 최대의 접착박리강도를 나타내었다. 결과적으로 대기압식 평판형 플라즈마 처리방식으로 고무소재 표면의 젖음성과 접착박리강도가 개선되었음을 확인하였다.