• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2001년도 제32차 추계학술대회
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• pp.66-69
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• 2001

• 동굴
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• 제82호
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• 한국세라믹학회지
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• 제36권8호
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• pp.813-819
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• 1999

Ion implantation, photo-lithography, Ar ion milling과 hot press 법을 이용한 micro-fabrication techrique을 사용하여 고순도 알루미나 단결정인 사파이어의 내부에, 조절된 Ca의 첨가량을 갖고 있는, crack과 비슷한 형태의 기공들을 형성시켰다. 이 bi-cryslal을 각각의 온도에서 열처리하여 Ca 이온이 고온에서 알루미나의 morphology와 hcaling에 미치는 영향을 관찰하였다. 열처리 온도가 올라감에 따라서 crack-like pore의 내부에 hcxagonal bridging ligaments가 생성되었는데, 열처리 온도와 Ca의 첨가량이 증가할수록 크기가 커지는 것을 관찰할 수 있었고, 생성된 hexagonal bndgmg ligaments는 열처리가 진행됨에 따라 서서히 커지면서 모서리가 둥글어지는 현상을 관찰할 수 있었다. Bicrystal 내부에 형성된 crack-like pore는 열처리가 진행되면서 edge regression. ligamcnt growth 및 flow의 3가지의 특징적인 형태로 진행되었다. 이때 edge regression은 상대적으로 저온에서부터 전체 crack-like pore에서 서서히 일어나기 시작하였으며, ligament growth는 일부 crack-like pore에서 진행되있으며, 대단히 빠른 속도로 crack healing이 진행됨을 추정할 수 있었다. Flow는 $1800^{\circ}C$ 이상의 고온에서 모든 crack-like pore에 걸쳐서 느리게 일어남을 알 수 있었다.

• 한국초전도ㆍ저온공학회논문지
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• 제21권1호
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• pp.15-17
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• 2019

We present terahertz optical properties of $GdBa_2Cu_3O_{7-x}$ (GdBCO) superconducting thin films. GdBCO films with a thickness of about 105 nm were grown on a $LaAlO_3$ (LAO) single crystal substrate using a conventional pulsed laser deposition (PLD) technique. Using an Ar ion milling system, the thickness of the GdBCO film was reduced to 58 nm, and its surface was also smoothened. Terahertz (THz) transmission spectra through two different GdBCO films are measured over the range between 0.2 and 1.5 THz using THz time domain spectroscopy. Interestingly, the THz transmission of the thinner GdBCO film has been increased to six times larger than that of the thicker one, while the thinner film is still maintaining its superconducting property at below 90 K.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.147-151
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• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• 한국결정성장학회지
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• 제9권3호
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• pp.327-333
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• 1999

Ion implantation, photo-lithography, Ar ion milling, hot press를 이용한 micro-fabrication 방법으로 고순도 단결정 알루미나 표면에 Ca를 제한된 양으로 첨가하고, 내부에 여러 가지 형태의 기공을 갖는 bi-crystal을 만들었다. 이 bi-crystal 고순도 알루미나에 미치는 Ca의 영향을 평가하기 위하여 내부 기공의 형태 변화와 결정의 성장을 열처리에 따라 광학현미경으로 관찰하였다. 열처리에 따라 inner crack-like pore의 내부표면에 dot와 육각형의 형태를 갖는 결정 입자가 생성되는 것을 관찰할 수 있었다. $1,500^{\circ}C$로 열처리한 경우에 CaO . $6Al_2O_3$로 생각되는 bar 형태의 결정이 표면에 석출되는 것이 관찰되었으며, 이 결정이 $1,600^{\circ}C$에서 열처리하면 사라지는 것으로 보아 이 온도 부근에서 알루미나에 대한 Ca의 solubility limit 또는 diffusion rate가 변화하는 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 한국세라믹학회지
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• 제34권8호
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• pp.834-842
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• 1997

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina single crystal, sapphire, had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press technique. The morphological change and the healing of cracklike pore in Ca doped high purity single crystal alumina, sapphire, during high temperature heat treatment in vacuum were observed using optical microscopy. The dot-like surface roughening was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO.6Al2O3, were observed on the inner surface after 1 hour heat treatment at 1, 50$0^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at 1, $600^{\circ}C$. This disappearance means that there should be a little increase of Ca solubility limit to alumina at this temperatures.

• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.9-14
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• 2006

Sample preparation plays a critical role in microstructure analysis using TEM. Although TEM specimen has been usually prepared by jet-polishing or Ar-ion beam milling technique. these methods could not be applied to YBCO CC which is composed of IBAD or RABiTS substrates, several buffet layers, and YBCO superconducting layer because of big difference in mechanical strengths between the metallic phase and oxide phases. To obtain useful cross-sectional information such as interface between the phases or second phases in YBCO CC, it is prerequisite to secure the large area of thin section in the cross-sectional direction. The superconducting layer or the buffer layers are relatively weak and fragile compared to the metallic substrate such as Ni-5wt%W RABiTS of Hastelloy-based IBAD, and preferential removal of weak ceramic phases during polishing steps makes specimen preparation almost impossible. Tripod polisher and small jig were home-made and employed to sample preparation. The polishing angle was maintained <$1^{\circ}$ throughout the polishing steps using 2 micrometers attached to the tripod plate. TEM specimens with large and thin area could be secured and used for RABiTS/IBAD substrate analyses. In some cases, additional Ar-beam ion milling with low beam current and impinging angle was used for less than 30 sec. to remove debris or polishing media attacked to the specimens.